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IGC07T120T6L Datasheet, Equivalent, IGBT.

IGBT

IGBT

 

 

 

Part IGC07T120T6L
Description IGBT
Feature IGC07T120T6L IGBT4 Low Power Chip Feat ures:
• 1200V Trench + Field stop tec hnology
• low switching losses
• po sitive temperature coefficient
• easy paralleling This chip is used for: low / medium power modules Applicatio ns:
• low / medium power drives C G E Chip Type IGC07T120T6L VCE 1200V I Cn 4A Die Size 2.
54 x 2.
72 mm2 Packag e sawn on foil MECHANICAL PARAMETER Ra ster size Emitter pad size Gate pad siz e Area total / active Thickness Wafer s ize Flat position Max.
pos sible chips p er wafer Passivation frontside Pad meta l Backside metal Die bond Wire bond Rej ect ink dot size Recommend .
Manufacture Infineon
Datasheet
Download IGC07T120T6L Datasheet
Part IGC07T120T6L
Description IGBT
Feature IGC07T120T6L IGBT4 Low Power Chip Feat ures:
• 1200V Trench + Field stop tec hnology
• low switching losses
• po sitive temperature coefficient
• easy paralleling This chip is used for: low / medium power modules Applicatio ns:
• low / medium power drives C G E Chip Type IGC07T120T6L VCE 1200V I Cn 4A Die Size 2.
54 x 2.
72 mm2 Packag e sawn on foil MECHANICAL PARAMETER Ra ster size Emitter pad size Gate pad siz e Area total / active Thickness Wafer s ize Flat position Max.
pos sible chips p er wafer Passivation frontside Pad meta l Backside metal Die bond Wire bond Rej ect ink dot size Recommend .
Manufacture Infineon
Datasheet
Download IGC07T120T6L Datasheet

IGC07T120T6L

IGC07T120T6L
IGC07T120T6L

IGC07T120T6L

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