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IGC36T120T6L Dataheets PDF



Part Number IGC36T120T6L
Manufacturers Infineon
Logo Infineon
Description IGBT
Datasheet IGC36T120T6L DatasheetIGC36T120T6L Datasheet (PDF)

IGC36T120T6L IGBT4 Low Power Chip FEATURES: • 1200V Trench + Field Stop technology • low switching losses • positive temperature coefficient • easy paralleling This chip is used for: • low / medium power modules Applications: • low / medium power drives C G E Chip Type IGC36T120T6L VCE ICn 1200V 35A Die Size 6.36 x 5.67 mm2 Package sawn on foil MECHANICAL PARAMETER Raster size Emitter pad size Gate pad size Area total / active Thickness Wafe r size Flat position Max.possible chips per w.

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IGC36T120T6L IGBT4 Low Power Chip FEATURES: • 1200V Trench + Field Stop technology • low switching losses • positive temperature coefficient • easy paralleling This chip is used for: • low / medium power modules Applications: • low / medium power drives C G E Chip Type IGC36T120T6L VCE ICn 1200V 35A Die Size 6.36 x 5.67 mm2 Package sawn on foil MECHANICAL PARAMETER Raster size Emitter pad size Gate pad size Area total / active Thickness Wafe r size Flat position Max.possible chips per wafer Passivation frontside Pad metal Backside metal Die bond Wire bond Reject ink dot size Recommended storage environment 6.36 x 5.67 2 x ( 1.95 x 4.18 ) 0.826 x 1.31 mm 2 36.1 / 24.2 115 µm 150 mm 90 grd 399 Photoimide 3200 nm AlSiCu Ni Ag –system suitable for epoxy and soft solder die bonding Electrically conductive glue or solder Al, <500µm ∅ 0.65mm ; max 1.2mm Store in original container, in dry nitrogen, < 6 month at an ambient temperature of 23°C Edited by IN FINEON Technologies , AIM PMD D CID CLS , L7653C, Edition 1, 31.10.2007 MAXIMUM RATINGS Parameter IGC36T120T6L Symbol Value Unit Collector-Emitter voltage , Tj=25 °C DC collector current, limited by Tjmax VC E IC 1200 1) V A Pulsed collector current, tp limited by Tjmax Ic p u l s 105 A Gate -Emitter voltage VGE ±20 V Operating junction temperature Short circuit data 2 ) V GE = 15V, VCC = 800V, Tvj = 150°C Tj tp -40 ... +175 10 °C µs Reverse bias safe operating area 2 ) (RBSOA) 1) depending on thermal properties of assembly IC max = 70 A, VCE max = 1200V, Tvj max= 150°C 2) not subject to production test - verified by design/characterization STATIC CHARACTERISTICS (tested on wafer ), Tj =25 °C Parameter Symbol Conditions Value Unit min. typ. max. Collector-Emitter breakdown voltage Collector-Emitter saturation voltage Gate -Emitter threshold voltage Zero gate voltage collector current Gate -Emitter leakage current Integrated gate resistor V(BR)CES VGE=0V , IC= 1.2 m A 1200 VCE(sat) VGE=15V, IC=35 A 1.6 1.85 2.1 V VGE(th) IC=1.2mA , VGE= VCE 5.0 5.8 6.5 ICES VCE=1200V , VGE=0V 5 µA IGES VC E=0V , VGE=20V 120 nA RGint -Ω ELECTRICAL CHARACTERISTICS (not subject to production test - verified by design/characterization) Parameter Symbol Conditions Value Unit min. typ. max. Input capacitance Output capacitance Reverse transfer capacitance Ciss Coss Crss VCE=25V, VGE =0V, f=1MHz 1950 155 115 pF Edited by IN FINEON Technologies , AIM PMD D CID CLS , L7653C, Edition 1, 31.10.2007 IGC36T120T6L SWITCHING CHARACTERISTICS inductive load (not subject to production test - verified by design /characterization) Parameter Symbol Conditions 1) Value min. typ. max. Unit Turn-on delay time Rise time Turn-off delay time Fall time td(on) tr td(off) tf Tj =125°C VC C=600V, IC=35 A, VGE =- 15/15V, R G= ---Ω tbd tbd ns tbd tbd 1) values also influenced by parasitic L- and C- in measurement and package. Edited by IN FINEON Technologies , AIM PMD.


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