Document
IGC36T120T6L
IGBT4 Low Power Chip
FEATURES: • 1200V Trench + Field Stop technology • low switching losses • positive temperature coefficient • easy paralleling
This chip is used for: • low / medium power modules
Applications: • low / medium power drives
C G
E
Chip Type IGC36T120T6L
VCE ICn 1200V 35A
Die Size 6.36 x 5.67 mm2
Package sawn on foil
MECHANICAL PARAMETER Raster size Emitter pad size Gate pad size Area total / active Thickness Wafe r size Flat position Max.possible chips per wafer Passivation frontside Pad metal
Backside metal
Die bond Wire bond Reject ink dot size
Recommended storage environment
6.36 x 5.67
2 x ( 1.95 x 4.18 ) 0.826 x 1.31
mm 2
36.1 / 24.2
115 µm
150 mm
90 grd
399
Photoimide
3200 nm AlSiCu
Ni Ag –system suitable for epoxy and soft solder die bonding
Electrically conductive glue or solder
Al, <500µm
∅ 0.65mm ; max 1.2mm
Store in original container, in dry nitrogen, < 6 month at an ambient temperature of 23°C
Edited by IN FINEON Technologies , AIM PMD D CID CLS , L7653C, Edition 1, 31.10.2007
MAXIMUM RATINGS Parameter
IGC36T120T6L
Symbol
Value
Unit
Collector-Emitter voltage , Tj=25 °C DC collector current, limited by Tjmax
VC E IC
1200
1)
V A
Pulsed collector current, tp limited by Tjmax
Ic p u l s
105 A
Gate -Emitter voltage
VGE
±20 V
Operating junction temperature Short circuit data 2 ) V GE = 15V, VCC = 800V, Tvj = 150°C
Tj tp
-40 ... +175 10
°C µs
Reverse bias safe operating area 2 ) (RBSOA) 1) depending on thermal properties of assembly
IC max = 70 A, VCE max = 1200V, Tvj max= 150°C
2) not subject to production test - verified by design/characterization
STATIC CHARACTERISTICS (tested on wafer ), Tj =25 °C
Parameter
Symbol
Conditions
Value Unit
min. typ. max.
Collector-Emitter breakdown voltage Collector-Emitter saturation voltage Gate -Emitter threshold voltage Zero gate voltage collector current Gate -Emitter leakage current Integrated gate resistor
V(BR)CES VGE=0V , IC= 1.2 m A 1200
VCE(sat)
VGE=15V, IC=35 A
1.6 1.85 2.1 V
VGE(th)
IC=1.2mA , VGE= VCE 5.0 5.8 6.5
ICES VCE=1200V , VGE=0V
5 µA
IGES VC E=0V , VGE=20V
120 nA
RGint
-Ω
ELECTRICAL CHARACTERISTICS (not subject to production test - verified by design/characterization)
Parameter
Symbol
Conditions
Value Unit
min. typ. max.
Input capacitance Output capacitance Reverse transfer capacitance
Ciss Coss Crss
VCE=25V, VGE =0V, f=1MHz
1950 155 115
pF
Edited by IN FINEON Technologies , AIM PMD D CID CLS , L7653C, Edition 1, 31.10.2007
IGC36T120T6L
SWITCHING CHARACTERISTICS inductive load (not subject to production test - verified by design /characterization)
Parameter
Symbol
Conditions 1)
Value min. typ. max.
Unit
Turn-on delay time Rise time Turn-off delay time Fall time
td(on) tr td(off) tf
Tj =125°C VC C=600V,
IC=35 A, VGE =- 15/15V,
R G= ---Ω
tbd
tbd ns
tbd
tbd
1) values also influenced by parasitic L- and C- in measurement and package.
Edited by IN FINEON Technologies , AIM PMD.