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IGC70T120T6RL Datasheet, Equivalent, IGBT.

IGBT

IGBT

 

 

 

Part IGC70T120T6RL
Description IGBT
Feature IGC70T120T6RL IGBT4 Low Power Chip FEA TURES:
• 1200V Trench + Field Stop te chnology
• low switching losses
• p ositive temperature coefficient
• eas y paralleling This chip is used for: low / medium power modules Applicati ons:
• low / medium power drives C G E Chip Type VCE ICn IGC70T120T6RL 1 200V 75A Die Size 9.
12 x 7.
71 mm2 Pac kage sawn on foil MECHANICAL PARAMETER Raster size Emitter pad size (incl.
ga te pad) Gate pad size Area total / acti ve Thickness Wafer size Flat position M ax.
possible chips per wafer Passivation frontside Pad metal Backside metal Die bond Wire bond Reject ink .
Manufacture Infineon
Datasheet
Download IGC70T120T6RL Datasheet
Part IGC70T120T6RL
Description IGBT
Feature IGC70T120T6RL IGBT4 Low Power Chip FEA TURES:
• 1200V Trench + Field Stop te chnology
• low switching losses
• p ositive temperature coefficient
• eas y paralleling This chip is used for: low / medium power modules Applicati ons:
• low / medium power drives C G E Chip Type VCE ICn IGC70T120T6RL 1 200V 75A Die Size 9.
12 x 7.
71 mm2 Pac kage sawn on foil MECHANICAL PARAMETER Raster size Emitter pad size (incl.
ga te pad) Gate pad size Area total / acti ve Thickness Wafer size Flat position M ax.
possible chips per wafer Passivation frontside Pad metal Backside metal Die bond Wire bond Reject ink .
Manufacture Infineon
Datasheet
Download IGC70T120T6RL Datasheet

IGC70T120T6RL

IGC70T120T6RL
IGC70T120T6RL

IGC70T120T6RL

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