IGBT
IGC99T120T6RM
IGBT4 Medium Power Chip
FEATURES:
• 1200V Trench + Field Stop technology • low switching losses • soft t...
Description
IGC99T120T6RM
IGBT4 Medium Power Chip
FEATURES:
1200V Trench + Field Stop technology low switching losses soft turn off
positive temperature coefficient easy paralleling
This chip is used for: medium power modules
Applications: medium power drives
C G
E
Chip Type
VCE ICn
Die Size
IGC99T120T6RM 1200V 100A 10.39 x 9.5 mm2
Package sawn on foil
MECHANICAL PARAMETER Raster size Emitter pad size (incl. gate pad) Gate pad size Area total / active Thickness Wafer size Flat position Max.possible chips per wafer Passivation frontside Pad metal
Backside metal
Die bond Wire bond Reject ink dot size
Recommended storage environment
10.39 x 9.5
7.987 x 8.923 1.31 x 0.811
mm 2
98.7 / 76.1
120 µm
150 mm
90 grd
140
Photoimide
3200 nm AlSiCu
Ni Ag –system suitable for epoxy and soft solder die bonding
Electrically conductive glue or solder
Al, <500µm
∅ 0.65mm ; max 1.2mm
Store in original container, in dry nitrogen, < 6 month at an ambient temperature of 23°C
Edited by IN FINEON Technologies , AIM PMD D CID CLS , L7683B, Editi on 1 , 31.10 .2007
MAXIMUM RATINGS Parameter
IGC99T120T6RM
Symbol
Value
Unit
Collector-Emitter voltage , Tj=25 °C DC collector current, limited by Tjmax
VC E IC
1200
1)
V A
Pulsed collector current, tp limited by Tjmax
Ic p u l s
300 A
Gate -Emitter voltage
VGE
±20 V
Operating junction temperature Short circuit data 2 ) V GE = 15V, VCC = 800V, Tvj = 150°C
Tj tp
-40 ... +17 5 10
°C µs
Reverse bias safe operating are...
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