N-channel Power MOSFET
STI22NM60N
Datasheet
N-channel 600 V, 0.20 Ω typ., 16 A MDmesh™ II Power MOSFET in I²PAK package
Features
TAB
ct(s) 1 ...
Description
STI22NM60N
Datasheet
N-channel 600 V, 0.20 Ω typ., 16 A MDmesh™ II Power MOSFET in I²PAK package
Features
TAB
ct(s) 1 2 3 du I²PAK Pro D(2) solete G(1) - Ob S(3) t(s) AM01475v1_noZen_noTab
Order code
VDS @ Tjmax.
RDS(on)max.
ID
STI22NM60N
650 V
0.22 Ω
16 A
100% avalanche tested Low input capacitance and gate charge Low gate input resistance
Applications
Switching applications
Description
This device is an N-channel Power MOSFET developed using the second generation of MDmesh™ technology. This revolutionary Power MOSFET associates a vertical structure to the company’s strip layout to yield one of the world’s lowest on-resistance and gate charge. It is therefore suitable for the most demanding high efficiency converters.
roduc Product status te P STI22NM60N
le Product summary
so Order code
STI22NM60N
ObMarking
22NM60N
Package
I2PAK
Packing
Tube
DS12574 - Rev 1 - May 2018 For further information contact your local STMicroelectronics sales office.
www.st.com
STI22NM60N
Electrical ratings
1
Electrical ratings
Table 1. Absolute maximum ratings
Symbol
Parameter
Value
Unit
VGS
Gate-source voltage
± 30
V
ID
Drain current (continuous) at TC = 25 °C
16
A
ID
Drain current (continuous) at TC = 100 °C
) IDM (1)
Drain current (pulsed)
t(s PTOT
Total dissipation at TC = 25 °C
uc dv/dt (2) Peak diode recovery voltage slope
d Tj
Operating junction temperature range
ro Tstg
Storage temperature range
te P 1. Pulse width limited by safe...
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