22NM60N

STI22NM60N Datasheet N-channel 600 V, 0.20 Ω typ., 16 A MDmesh™ II Power MOSFET in I²PAK package Features TAB ct(s) 1 2 3 du I²PAK Pro D(2) solete G(1) - Ob S(3) t(s) AM01475v1_noZen_noTab Order code VDS @ Tjmax. RDS(on)max. ID STI22NM60N 650 V 0.22 Ω 16 A 100% avalanche tested Low input capacitance and gate charge Low gate input resistance Applications Switching applications Description This device is an N-channel Power MOSFET developed using the second generation of MDmesh™ technology. This revolutionary Power MOSFET associates a vertical structure to the company’s strip layout to yield one of the world’s lowest on-resistance and gate charge. It is therefore suitable for the most demanding high efficiency converters. roduc Product status te P STI22NM60N le Product summary so Order code STI22NM60N ObMarking 22NM60N Package I2PAK Packing Tube DS12574 - Rev 1 - May 2018 For further information contact your local STMicroelectronics sales office. www.st.com STI22NM60N Electrical ratings 1 Electrical ratings Table 1. Absolute maximum ratings Symbol Parameter Value Unit VGS Gate-source voltage ± 30 V ID Drain current (continuous) at TC = 25 °C 16 A ID Drain current (continuous) at TC = 100 °C ) IDM (1) Drain current (pulsed) t(s PTOT Total dissipation at TC = 25 °C uc dv/dt (2) Peak diode recovery voltage slope d Tj Operating junction temperature range ro Tstg Storage temperature range te P 1. Pulse width limited by safe...