2SC2901

ST 2SC2901 NPN Silicon Epitaxial Planar Transistor for general purpose amplifier and high speed switching applications. The transistor is subdivided into two groups L and K, according to its DC current gain. On special request, these transistors can be manufactured in different pin configurations. Features ˙ High frequency current gain ˙ High speed switching ˙ Small output capacitance TO-92 Plastic Package Weight approx. 0.19g Absolute Maximum Ratings (T a = 25 OC) Collector Base Voltage Collector Emitter Voltage Collector Emitter Voltage Emitter Base Voltage Collector Current Collector Current (10µs pulse) Power Dissipation Junction Temperature Storage Temperature Range Symbol VCBO VCES VCEO VEBO IC IC Ptot Tj TS G S P FORM A IS AVAILABLE Value 40 40 15 5 200 500 600 150 -55 to+150 Unit V V V V mA mA mW OC OC РАДИОТЕХ-ТРЕЙД Тел.: (495) 795-0805 Факс: (495) 234-1603 Эл. почта: [email protected] Веб: www.rct.ru ® ST 2SC2901 Characteristics at Tamb=25 OC DC Current Gain* at VCE=1V, IC=10mA Current Gain Group L K Collector Cutoff Current at VCB=20V Emitter Cutoff Current at VEB=3V Collector Saturation Voltage* at IC=10mA, IB=1mA Base Saturation Voltage* at IC=10mA, IB=1mA Turn-on Time at VCC=3V, IC=10mA, IB1=3mA, -VBE=1.5V Storage Time at IC=10mA, IB1= -IB2=10mA Turn-off Time at VCC=3V, IC=10mA, IB1=3mA, -IB2=1.5mA Gain Bandwidth Product at VCE=10V, -IE=10mA, f=100MHz Output Capacitance at VCB=5V, f=1MHz *Pulsed PW≦350µs, Duty Cycle≦2% Symbol hFE hFE ICBO IEBO VCE(sat) VBE...