2SC2901 NPN Silicon Epitaxial Planar Transistor
for general purpose amplifier and high speed switching applications.
The...
2SC2901
NPN Silicon Epitaxial Planar
Transistor
for general purpose amplifier and high speed switching applications.
The
transistor is subdivided into two groups L and K, according to its DC current gain.
On special request, these
transistors can be manufactured in different pin configurations.
Features ․High frequency current gain ․High speed switching ․Small output capacitance
Absolute Maximum Ratings (Ta = 25 OC)
Parameter Collector Base Voltage Collector Emitter Voltage Collector Emitter Voltage Emitter Base Voltage Collector Current Collector Current (10μs pulse) Power Dissipation Junction Temperature Storage Temperature Range
Symbol VCBO VCES VCEO VEBO IC IC Ptot Tj TS
1. Emitter 2. Collector 3. Base
TO-92 Plastic Package
Weight approx. 0.19g
Value 40 40 15 5 200 500 600 150
-55 to+150
Unit V V V V mA mA
mW OC OC
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7/15/2011
Characteristics at Tamb=25 OC
Parameter DC Current Gain*
at VCE=1V, IC=10mA Current Gain Group L K
Collector Cutoff Current at VCB=20V
Emitter Cutoff Current at VEB=3V
Collector Saturation Voltage* at IC=10mA, IB=1mA
Base Saturation Voltage* at IC=10mA, IB=1mA
Turn-on Time at VCC=3V, IC=10mA, IB1=3mA, -VBE=1.5V
Storage Time at IC=10mA, IB1= -IB2=10mA
Turn-off Time at VCC=3V, IC=10mA, IB1=3mA, -IB2=1.5mA
Gain Bandwidth Product at VCE=10V, -IE=10mA, f=100MHz
Output Capacitance at VCB=5V, f=1MHz
*Pulsed PW≦350μs, Duty Cycle≦2%
Symbol
hFE hFE ICBO IEBO VCE(sat) VBE(sat) ton tstg toff fT COB
Min.
40 100
500 -
Typ.
0.15 0.8 8 6 12 750...