2SC2901

ST 2SC2901 NPN Silicon Epitaxial Planar Transistor for general purpose amplifier and high speed switching applications. The transistor is subdivided into two groups L and K, according to its DC current gain. On special request, these transistors can be manufactured in different pin configurations. Absolute Maximum Ratings (Ta = 25 OC) Parameter Collector Base Voltage Collector Emitter Voltage Collector Emitter Voltage Emitter Base Voltage Collector Current Collector Current (10 µs pulse) Power Dissipation Junction Temperature Storage Temperature Range Symbol VCBO VCES VCEO VEBO IC ICP Ptot Tj Tstg 1. Emitter 2. Base 3. Collector TO-92 Plastic Package Value 40 40 15 5 200 500 600 150 - 55 to + 150 Unit V V V V mA mA mW OC OC Characteristics at Ta = 25 OC Parameter Symbol DC Current Gain at VCE = 1 V, IC = 10 mA Current Gain Group Collector Base Cutoff Current at VCB = 20 V Emitter Base Cutoff Current at VEB = 3 V Collector Emitter Saturation Voltage at IC = 10 mA, IB = 1 mA Base Emitter Saturation Voltage at IC = 10 mA, IB = 1 mA Turn-on Time at VCC = 3 V, IC = 10 mA, IB1 = 3 mA, -VBE = 1.5 V Storage Time at IC = 10 mA, IB1 = -IB2 = 10 mA Turn-off Time at VCC = 3 V, IC = 10 mA, IB1 = 3 mA, -IB2 = 1.5 mA Gain Bandwidth Product at VCE = 10 V, -IE = 10 mA, f = 100 MHz Output Capacitance at VCB = 5 V, f = 1 MHz L K hFE hFE ICBO IEBO VCE(sat) VBE(sat) ton tstg toff fT Cob Min. 40 100 500 - Typ. 0.15 0.8 8 6 12 750 1.8 Max. 120 200 0.1 0.1 0.25 0.85 12 13 18 4 Uni...