SEMICONDUCTOR
TECHNICAL DATA
KF8N60P/F
N CHANNEL MOS FIELD EFFECT TRANSISTOR
General Description
This planar stripe M...
SEMICONDUCTOR
TECHNICAL DATA
KF8N60P/F
N CHANNEL MOS FIELD EFFECT
TRANSISTOR
General Description
This planar stripe MOSFET has better characteristics, such as fast switching time, low on resistance, low gate charge and excellent avalanche characteristics. It is mainly suitable for active power factor correction and switching mode power supplies.
FEATURES VDSS=600V, ID=8A Drain-Source ON Resistance : RDS(ON)(Max)=1.05 @VGS=10V Qg(typ.)= 24nC
MAXIMUM RATING (Tc=25 )
CHARACTERISTIC
RATING SYMBOL
KF8N60P KF8N60F
Drain-Source Voltage
VDSS
600
Gate-Source Voltage
VGSS
30
@TC=25
Drain Current @TC=100
Pulsed (Note1)
Single Pulsed Avalanche Energy (Note 2) Repetitive Avalanche Energy (Note 1) Peak Diode Recovery dv/dt (Note 3)
ID
IDP EAS EAR dv/dt
8 8* 5 5* 20 20*
230
14.7
4.5
Drain Power Dissipation
Tc=25 Derate above 25
PD
154 1.23
50 0.4
Maximum Junction Temperature
Tj
150
Storage Temperature Range
Tstg -55 150
Thermal Characteristics
Thermal Resistance, Junction-to-Case RthJC
0.81
Thermal Resistance, Junction-to-Ambient
RthJA
62.5
* : Drain current limited by maximum junction temperature.
2.5 62.5
UNIT V V
A
mJ mJ V/ns W W/
/W /W
Q
K
KF8N60P
A
E
I K
M D
NN
F G
B Q
L J
O C
P H
123
1. GATE 2. DRAIN 3. SOURCE
DIM MILLIMETERS A 9.9 +_ 0.2
B 15.95 MAX
C 1.3+0.1/-0.05 D 0.8 +_ 0.1 E 3.6 +_ 0.2 F 2.8 +_ 0.1 G 3.7
H 0.5+0.1/-0.05
I 1.5 J 13.08 +_ 0.3 K 1.46 L 1.4 +_ 0.1 M 1.27 +_ 0.1 N 2.54 +_ 0.2 O 4.5 +_ 0.2 P 2.4 +_ 0.2 Q 9.2 +_ 0.2
TO-220AB...