KF80N08P

SEMICONDUCTOR TECHNICAL DATA KF80N08P/F N CHANNEL MOS FIELD EFFECT TRANSISTOR General Description It s mainly suitable for low voltage applications such as automotive, DC/DC converters and a load switch in battery powered applications FEATURES VDSS= 75V, ID= 80A Drain-Source ON Resistance : RDS(ON)=10m (Max.) @VGS = 10V MAXIMUM RATING (Tc=25 ) CHARACTERISTIC RATING SYMBOL KF80N08P KF80N08F Drain-Source Voltage VDSS 75 Gate-Source Voltage VGSS 20 @TC=25 Drain Current @TC=100 Pulsed (Note1) Single Pulsed Avalanche Energy (Note 2) Repetitive Avalanche Energy (Note 1) Peak Diode Recovery dv/dt (Note 3) ID IDP EAS EAR dv/dt 80 56 76 39 320 224 1200 18 4.5 Drain Power Dissipation Tc=25 Derate above 25 PD 230 1.54 62.5 0.42 Maximum Junction Temperature Tj 175 Storage Temperature Range Tstg -55 175 Thermal Characteristics Thermal Resistance, Junction-to-Case RthJC 0.65 Thermal Resistance, Junction-to-Ambient RthJA 62.5 * : Drain current limited by maximum junction temperature. 2.4 62.5 UNIT V V A mJ mJ V/ns W W/ /W /W Q K KF80N08P A E I K M D NN F G B Q L J O C P H 123 1. GATE 2. DRAIN 3. SOURCE DIM MILLIMETERS A 9.9 +_ 0.2 B 15.95 MAX C 1.3+0.1/-0.05 D 0.8 +_ 0.1 E 3.6 +_ 0.2 F 2.8 +_ 0.1 G 3.7 H 0.5+0.1/-0.05 I 1.5 J 13.08 +_ 0.3 K 1.46 L 1.4 +_ 0.1 M 1.27 +_ 0.1 N 2.54 +_ 0.2 O 4.5 +_ 0.2 P 2.4 +_ 0.2 Q 9.2 +_ 0.2 TO-220AB KF80N08F AC F O E LM D NN 123 G B J R H 1. GATE 2. DRAIN 3. SOURCE DIM MILLIMETERS A 10.16 +_ 0.2 B 15.87 +_ ...