KF70N06F

SEMICONDUCTOR TECHNICAL DATA KF70N06P/F N CHANNEL MOS FIELD EFFECT TRANSISTOR General Description It’s mainly suitable for low viltage applications such as automotive, DC/DC converters and a load switch in battery powered applications FEATURES VDSS= 60V, ID= 70A (KF70N06P) Drain-Source ON Resistance : RDS(ON)=12m (Max.) @VGS = 10V MOSFET MAXIMUM RATING (Ta=25 Unless otherwise noted) CHARACTERISTIC RATING SYMBOL UNIT KF70N06P KF70N06F Drain-Source Voltage VDSS 60 Gate-Source Voltage VGSS 20 Drain Current @TC=25 @TC=100 70 ID* 44 41 25 Pulsed (Note1) Single Pulsed Avalanche Energy (Note 2) Repetitive Avalanche Energy (Note 1) Peak Diode Recovery dv/dt (Note 3) IDP EAS EAR dv/dt 240 196 480 12 4.5 Drain Power Dissipation Tc=25 Derate above 25 PD 125 1.0 43 0.34 Maximum Junction Temperature Tj 150 Storage Temperature Range Tstg -55~150 Thermal Characteristics Thermal Resistance, Junction-to-Case Thermal Resistance, Junction-to-Ambient RthJC RthJA 1.0 2.9 62.5 * : Drain current limited by maximum junction temperature. V V A mJ mJ V/ns W W/ /W /W Q K KF70N06P A E I K M D NN F G B Q L J O C P H 123 1. GATE 2. DRAIN 3. SOURCE DIM MILLIMETERS A 9.9 +_ 0.2 B 15.95 MAX C 1.3+0.1/-0.05 D 0.8 +_ 0.1 E 3.6 +_ 0.2 F 2.8 +_ 0.1 G 3.7 H 0.5+0.1/-0.05 I 1.5 J 13.08 +_ 0.3 K 1.46 L 1.4 +_ 0.1 M 1.27 +_ 0.1 N 2.54 +_ 0.2 O 4.5 +_ 0.2 P 2.4 +_ 0.2 Q 9.2 +_ 0.2 TO-220AB KF70N06F AC F O E LM D NN 123 G B J R H 1. GATE 2. DRAIN 3. SOURCE DIM MIL...