2SK3666

Ordering number : EN8158C 2SK3666 N-Channel JFET 30V, 0.6 to 3.0mA, 6.5mS, CP http://onsemi.com Applications Low-frequency general-purpose amplifier, impedance conversion, infrared sensor applications Features Small IGSS Small Ciss Specifications Absolute Maximum Ratings at Ta=25°C Parameter Drain-to-Source Voltage Gate-to-Drain Voltage Gate Current Drain Current Allowable Power Dissipation Junction Temperature Storage Temperature Symbol VDSX VGDS IG ID PD Tj Tstg Conditions Ratings 30 --30 10 10 200 150 --55 to +150 Unit V V mA mA mW °C °C Stresses exceeding those listed in the Maximum Ratings table may damage the device. If any of these limits are exceeded, device functionality should not be assumed, damage may occur and reliability may be affected. Package Dimensions unit : mm (typ) 7013A-011 Product & Package Information Package : CP JEITA, JEDEC : SC-59, TO-236, SOT-23, TO-236AB Minimum Packing Quantity : 3,000 pcs./reel 2.9 3 0.1 2SK3666-2-TB-E 2SK3666-3-TB-E Packing Type: TL Marking 0.05 1.1 2.5 0.3 0.5 1.5 0.5 LOT No. RANK LOT No. 1 0.95 2 0.4 1 : Source 2 : Drain 3 : Gate CP TB Electrical Connection 3 12 JK ORDERING INFORMATION See detailed ordering and shipping information on page 2 of this data sheet. Semiconductor Components Industries, LLC, 2014 April, 2014 40414HK TC-00003105/62012TKIM/D2805IMMS/31505TSIM GB No.8158-1/4 2SK3666 Electrical Characteristics at Ta=25°C Parameter Gate-to-Drain Breakdown Volt...