2SK3703

Ordering number : EN7681B 2SK3703 N-Channel Power MOSFET 60V, 30A, 26mΩ, TO-220F-3SG http://onsemi.com Features ON-resistance RDS(on)1=20mΩ (typ.) 4V drive Input capacitance Ciss=1780pF (typ.) Specifications Absolute Maximum Ratings at Ta=25°C Parameter Symbol Drain-to-Source Voltage Gate-to-Source Voltage Drain Current (DC) Drain Current (Pulse) VDSS VGSS ID IDP Allowable Power Dissipation PD Channel Temperature Tch Storage Temperature Tstg Avalanche Energy (Single Pulse) *1 EAS Avalanche Current *2 IAV Note :*1 VDD=20V, L=200μH, IAV=30A (Fig.1) *2 L≤200μH, Single pulse Conditions PW≤10μs, duty cycle≤1% Tc=25°C Ratings 60 ±20 30 120 2.0 25 150 --55 to +150 135 30 Unit V V A A W W °C °C mJ A Stresses exceeding Maximum Ratings may damage the device. Maximum Ratings are stress ratings only. Functional operation above the Recommended Operating Conditions is not implied. Extended exposure to stresses above the Recommended Operating Conditions may affect device reliability. Package Dimensions unit : mm (typ) 7529-001 10.16 3.18 4.7 2.54 2SK3703-1E Product & Package Information Package : TO-220F-3SG JEITA, JEDEC : SC-67 Minimum Packing Quantity : 50 pcs./magazine Marking Electrical Connection 2 3.3 15.87 6.68 15.8 3.23 A 1.47 MAX 0.8 123 2.54 2.54 12.98 2.76 DETAIL-A (0.84) 0.5 1 : Gate FRAME 2 : Drain EMC 3 : Source TO-220F-3SG ( 1.0) K3703 LOT No. 1 3 Semiconductor Components Industries, LLC, 2013 July, 2013 51612 TK...