2SK3707

Ordering number : EN7706A 2SK3707 N-Channel Power MOSFET 100V, 20A, 60mΩ, TO-220F-3SG http://onsemi.com Features ON-resistance RDS(on)1=45mΩ (typ.) 4V drive Input capacitance Ciss=2150pF (typ.) Specifications Absolute Maximum Ratings at Ta=25°C Parameter Symbol Drain-to-Source Voltage Gate-to-Source Voltage Drain Current (DC) Drain Current (Pulse) VDSS VGSS ID IDP Allowable Power Dissipation PD Channel Temperature Tch Storage Temperature Tstg Avalanche Energy (Single Pulse) *1 EAS Avalanche Current *2 IAV Note :*1 VDD=20V, L=500μH, IAV=20A (Fig.1) *2 L≤500μH, Single pulse Conditions PW≤10μs, duty cycle≤1% Tc=25°C Ratings 100 ±20 20 80 2.0 25 150 --55 to +150 125 20 Unit V V A A W W °C °C mJ A Stresses exceeding Maximum Ratings may damage the device. Maximum Ratings are stress ratings only. Functional operation above the Recommended Operating Conditions is not implied. Extended exposure to stresses above the Recommended Operating Conditions may affect device reliability. Package Dimensions unit : mm (typ) 7529-001 10.16 3.18 4.7 2.54 2SK3707-1E Product & Package Information Package : TO-220F-3SG JEITA, JEDEC : SC-67 Minimum Packing Quantity : 50 pcs./magazine Marking Electrical Connection 2 3.3 15.87 6.68 15.8 3.23 A 1.47 MAX 0.8 123 2.54 2.54 12.98 2.76 DETAIL-A (0.84) 0.5 1 : Gate FRAME 2 : Drain EMC 3 : Source TO-220F-3SG ( 1.0) K3707 LOT No. 1 3 Semiconductor Components Industries, LLC, 2013 July, 2013 53012 T...