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2SK3738 Dataheets PDF



Part Number 2SK3738
Manufacturers ON Semiconductor
Logo ON Semiconductor
Description N-Channel JFET
Datasheet 2SK3738 Datasheet2SK3738 Datasheet (PDF)

Ordering number : EN7671A 2SK3738 N-Channel JFET 40V, 50 to 130μA, 0.13mS, SMCP http://onsemi.com Applications • Impedance conversion • Infrared sensor Features • Small IGSS • Small Ciss • Ultrasmall package permitting applied sets to be small and slim Specifications Absolute Maximum Ratings at Ta=25°C Parameter Symbol Drain-to-Source Voltage Gate-to-Drain Voltage Gate Current Drain Current Allowable Power Dissipation Junction Temperature VDSS VGDS IG ID PD Tj Storage Temperature Tstg.

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Ordering number : EN7671A 2SK3738 N-Channel JFET 40V, 50 to 130μA, 0.13mS, SMCP http://onsemi.com Applications • Impedance conversion • Infrared sensor Features • Small IGSS • Small Ciss • Ultrasmall package permitting applied sets to be small and slim Specifications Absolute Maximum Ratings at Ta=25°C Parameter Symbol Drain-to-Source Voltage Gate-to-Drain Voltage Gate Current Drain Current Allowable Power Dissipation Junction Temperature VDSS VGDS IG ID PD Tj Storage Temperature Tstg Conditions Ratings 40 --40 10 1 100 150 --55 to +150 Unit V V mA mA mW °C °C Stresses exceeding Maximum Ratings may damage the device. Maximum Ratings are stress ratings only. Functional operation above the Recommended Operating Conditions is not implied. Extended exposure to stresses above the Recommended Operating Conditions may affect device reliability. Package Dimensions unit : mm (typ) 7027A-003 1.6 0.3 3 0.1 0.1 MIN 2SK3738-TL-E Product & Package Information • Package : SMCP • JEITA, JEDEC : SC-75, SOT-416 • Minimum Packing Quantity : 3,000 pcs./reel Packing Type: TL Marking 1.6 0.8 0.4 LOT No. LOT No. 0.4 12 0.2 0.5 0.5 1 : Source 2 : Drain 3 : Gate SMCP TL Electrical Connection 3 KB 0.75 0 to 0.1 0.6 12 Semiconductor Components Industries, LLC, 2013 August, 2013 91212 TKIM/42004GB TSIM TA-100829 No.7671-1/6 2SK3738 Electrical Characteristics at Ta=25°C Parameter Symbol Gate-to-Drain Breakdown Voltage Gate Cutoff Current Cutoff Voltage Drain Current Forward Transfer Admittance Input Capacitance Reverse Transfer Capacitance V(BR)GDS IGSS VGS(off) IDSS | yfs | Ciss Crss Conditions IG=--10μA, VDS=0V VGS=--20V, VDS=0V VDS=10V, ID=1μA VDS=10V, VGS=0V VDS=10V, VGS=0V, f=1kHz VDS=10V, VGS=0V, f=1MHz Ordering Information Device 2SK3738-TL-E Package SMCP Shipping 3,000pcs./reel min --40 Ratings typ 50 0.06 --1.5 0.13 1.7 0.7 max --500 --2.3 130 Unit V pA V μA mS pF pF memo Pb Free Drain Current, ID -- μA 140 120 100 80 60 40 20 0 0 --1.2 ID -- VDS VGS=0V --0.2V --0.4V --0.6V --0.8V --1.0V --1.2V --1.4V 1 234 5 Drain-to-Source Voltage, VDS -- V ITR00837 ID -- VGS 80 VDS=10V IDSS=50μA 70 60 --25°C 50 Ta=25°C 40 75°C 30 20 10 --1.0 --0.8 --0.6 --0.4 --0.2 0 0 Gate-to-Source Voltage, VGS -- V ITR00839 Drain Current, ID -- μA Drain Current, ID -- μA 140 120 100 80 60 40 20 0 0 --2.4 ID -- VDS VGS=0V --0.2V --0.4V --0.6V --0.8V --1.0V --1.2V --1.4V 4 8 12 16 20 Drain-to-Source Voltage, VDS -- V ITR00838 ID -- VGS 160 VDS=10V IDSS=100μA 140 120 --25°C 100 80 Ta=25°C 75°C 60 40 20 --2.0 --1.6 --1.2 --0.8 --0.4 0 0 Gate-to-Source Voltage, VGS -- V ITR00840 No.7671-2/6 Drain Current, ID -- μA Cutoff Voltage, VGS(off) -- V Allowable Power Dissipation, PD -- mW 2SK3738 VGS(off) -- IDSS 3 VDS=10V ID=1μA 2 3 2 ⏐yfs⏐ -- IDSS VDS=10V VGS=0 f=1kHz Forward Transfer Admittance, ⏐yfs⏐ -- mS --1.0 7 5 3 5 7 100 23 Drain Current, IDSS -- μA IT06668 PD -- Ta 120 100 80 60 40 20 0 0 20 40 60 80 100 120 140 160 Ambient Temperature, Ta -- °C IT06670 5 Crss -- VDS VGS=0 3 f=1MHz 2 1.0 7 5 3 2 0.1 1.0 2 3 5 7 10 23 Drain-to-Source Voltage, VDS -- V 57 IT06672 Input Capacitance, Ciss -- pF 0.1 7 5 3 5 7 100 2 Drain Current, IDSS -- μA IT06669 Ciss -- VDS 10 VGS=0 7 f=1MHz 5 3 2 1.0 7 5 3 1.0 23 5 7 10 23 57 Drain-to-Source Voltage, VDS -- V IT06671 Reverse Transfer Capacitance, Crss -- pF No.7671-3/6 Embossed Taping Specification 2SK3738-TL-E 2SK3738 No.7671-4/6 Outline Drawing 2SK3738-TL-E 2SK3738 Land Pattern Example Mass (g) Unit 0.003 * For reference mm 0.7 Unit: mm 0.7 1.3 0.7 0.6 0.5 0.5 No.7671-5/6 2SK3738 ON Semiconductor and the ON logo are registered trademarks of Semiconductor Components Industries, LLC (SCILLC). SCILLC owns the rights to a number of patents, trademarks, copyrights, trade secrets, and other intellectual property. A listing of SCILLC’s product/patent coverage may be accessed at www.onsemi.com/site/pdf/Patent-Marking.pdf. SCILLC reserves the right to make changes without further notice to any products herein. SCILLC makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does SCILLC assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages. “Typical” parameters which may be provided in SCILLC data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. All operating parameters, including “Typicals” must be validated for each customer application by customer’s technical experts. SCILLC does not convey any license under its patent rights nor the rights of others. SCILLC products are not designed, intended, or authorized for use as components in systems intended for surgical implant into the b.


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