Document
Ordering number : EN4423D
3SK263
N-Channnel Dual Gate MOSFET
15V,30mA,PG=21dB,NF=1.1dB, CP4
http://onsemi.com
Features
• Enhancement type • Small noise figure • Small cross modulation
Specifications
Absolute Maximum Ratings at Ta=25°C
Parameter Drain-to-Source Voltage Gate1-to-Source Voltage Gate2-to-Source Voltage Drain Current Allowable Power Dissipation Channel Temperature Storage Temperature
Symbol
VDS VG1S VG2S ID PD Tch
Tstg
Conditions
Ratings 15 ±8 ±8 30
200 125 --55 to +125
Unit V V V mA
mW °C °C
Stresses exceeding those listed in the Maximum Ratings table may damage the device. If any of these limits are exceeded, device functionality should not be assumed, damage may occur and reliability may be affected.
Package Dimensions unit : mm (typ) 7014A-006
2.9 0.4
43
3SK263-5-TG-E
0.1
Product & Package Information
• Package
: CP4
• JEITA, JEDEC
: SC-61, SC-82AB, SOT-143, SOT-343
• Minimum Packing Quantity : 3,000 pcs./reel
Packing Type: TG Marking
0.05 1.1 2.5 0.3 0.5 1.5 0.5
LOT No. RANK
LOT No.
12 0.95 0.85
0.6
1 : Drain 2 : Source 3 : Gate1 4 : Gate2
CP4
TG
Electrical Connection
1 3 4
RJ
2
Semiconductor Components Industries, LLC, 2014 June, 2014
60914HK TA-4314/TKIM/82599TH(KT)/20696YK/63094MT(KOTO) No.4423-1/4
3SK263
Electrical Characteristics at Ta=25°C
Parameter
Symbol
Conditions
Drain-to-Source Voltage
VDS
VG1S=0V, VG2S=0V, ID=100mA
Gate1-to-Source Cutoff Voltage
VG1S(off) VDS=6V, VG2S=4V, ID=100mA
Gate2-to-Source Cutoff Voltage
VG2S(off) VDS=6V, VG1S=3V, ID=100mA
Gate1-to-Source Leakage Current
IG1SS
VG1S=±6V, VG2S=VDS=0V
Gate2-to-Source Leakage Current
IG2SS
VG2S=±6V, VG1S=VDS=0V
Zero-Gate Voltage Drain Current Forward Transfer Admittance
IDSX | yfs |
VDS=6V, VG1S=1.5V, VG2S=4V VDS=6V, ID=10mA, VG2S=4V, f=1kHz
Input Capacitance Reverse Transfer Capacitance
Ciss Crss
VDS=6V, f=1MHz, VG1S=0V, VG2S=4V
Power Gain Noise Figure
PG VDS=6V, ID=10mA, VG2S=4V, f=200MHz NF VDS=6V, ID=10mA, VG2S=4V, f=200MHz
* : The 3SK263 is classified by IDSX as follows : (unit : mA)
Rank
5
IDSX
5.0 to 12.0
min 15 0 0.1
Ratings typ
0.7 0.9
*5 14 2.7
0.015 18 21
1.1
max
1.3 1.6 ±50 ±50 *12
0.03
2.2
Unit
V V V nA nA mA mS pF pF dB dB
Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product performance may not be indicated by the Electrical Characteristics if operated under different conditions.
PG, NF Specified Test Circuit
f=200MHz
~20pF
IN
1000pF
2
3 4
T
50Ω
47pF
VG1S 1000pF 15kΩ
2
1 2
T
~20pF 12Ω
1000pF
~20pF
1
1 2
T
VG2S
VDS
L : 1mmØ enamel wire 10mmØ
OUT 50Ω
Ordering Information
Device 3SK263-5-TG-E
Package CP4
Shipping 3,000pcs./reel
memo Pb-Free
No.4423-2/4
Drain Current, ID -- mA 2.4V
Drain Current, ID -- mA
3SK263
20 VG2S=4.0V
16
12
ID -- VDS
2.2V 2.0V 1.8V
1.6V
8 1.4V
1.2V
4
VG1S=0.6V
0 02468
Drain-to-SIDourc-e- VoVltGag2e,SVDS -- V
25 VDS=6V
1.0V 0.8V
10 ITR02874
VG1S =2.5V
20 2.25V
2.0V
15
1.75V
10 1.5V
1.25V
5
1.0V
0.75V
0 01
234
5
Gate2-to-Source Voltage, VG2S -- V ITR02876
25 | yfs | -- ID
VDS=6V f=1kHz
20
15
VG2S=6.0V
5.5V 5.0V4.5V
4.0V
10
Forward Transfer Admittance, | yfs | -- mS
Drain Current, ID -- mA
25
VDS=6V
20 15 10
ID -- VG1S
3.5V
4.0V
4.5V 5.0V 5.5V
3.0V 2.5V
2.0V
VG2S =6.0V
5 1.5V
0.5V 1.0V
0 0 0.5 1.0 1.5 2.0 2.5
Gate1-to-Source
| yfs |
V--oltaVgGe, 1VSG1S
--
V
ITR02875
25
VDS=6V
f=1kHz
20
5.5V 5.0V 4.5V
15
V G2S=6.0V
3.5V4.0V
10
5 1.5V
1.0V
0 0 0.5 1.0 1.5 2.0 2.5
Gate1-to-Source Voltage, VG1S -- V ITR02877
Ciss -- VG2S
7 VDS=6V VG1S : VG2S=4V
5 ID=10mA f=1MHz
3
2
Input Capacitance, Ciss -- pF
5
Forward Transfer Admittance, | yfs | -- mS
3.0V 2.5V 2.0V
3.5V 3.0V 2.5V 2.0V 1.5V 1.0V
Power Gain, PG -- dB
0 0 5 10 15 20
Drain Current, ID -- mA
30 VDS=6V
PG, NF -- VG2S
VG1S : VG2S=4V
ID=10mA
PG
20 f=200MHz
25 ITR02878
4
3
10 2
NF
01
--10 0
0 123456
Gate2-to-Source Voltage, VG2S -- V ITR02880
Noise Figure, NF -- dB Allowable Power Dissipation, PD -- mW
1.0 --1
240
01234
Gate2-to-Source Voltage, VG2S -- V ITR02879
PD -- Ta
200
160
120
80
40
0 0 20 40 60 80 100 120 140
Ambient Temperature, Ta -- °C ITR02881
No.4423-3/4
Outline Drawing 3SK263-5-TG-E
3SK263
Land Pattern Example
Mass (g) Unit
0.013
* For reference
mm
1.9
Unit: mm
2.4 1.0
0.8 1.2 1.8
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