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3SK263 Dataheets PDF



Part Number 3SK263
Manufacturers ON Semiconductor
Logo ON Semiconductor
Description N-Channnel Dual Gate MOSFET
Datasheet 3SK263 Datasheet3SK263 Datasheet (PDF)

Ordering number : EN4423D 3SK263 N-Channnel Dual Gate MOSFET 15V,30mA,PG=21dB,NF=1.1dB, CP4 http://onsemi.com Features • Enhancement type • Small noise figure • Small cross modulation Specifications Absolute Maximum Ratings at Ta=25°C Parameter Drain-to-Source Voltage Gate1-to-Source Voltage Gate2-to-Source Voltage Drain Current Allowable Power Dissipation Channel Temperature Storage Temperature Symbol VDS VG1S VG2S ID PD Tch Tstg Conditions Ratings 15 ±8 ±8 30 200 125 --55 to +.

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Ordering number : EN4423D 3SK263 N-Channnel Dual Gate MOSFET 15V,30mA,PG=21dB,NF=1.1dB, CP4 http://onsemi.com Features • Enhancement type • Small noise figure • Small cross modulation Specifications Absolute Maximum Ratings at Ta=25°C Parameter Drain-to-Source Voltage Gate1-to-Source Voltage Gate2-to-Source Voltage Drain Current Allowable Power Dissipation Channel Temperature Storage Temperature Symbol VDS VG1S VG2S ID PD Tch Tstg Conditions Ratings 15 ±8 ±8 30 200 125 --55 to +125 Unit V V V mA mW °C °C Stresses exceeding those listed in the Maximum Ratings table may damage the device. If any of these limits are exceeded, device functionality should not be assumed, damage may occur and reliability may be affected. Package Dimensions unit : mm (typ) 7014A-006 2.9 0.4 43 3SK263-5-TG-E 0.1 Product & Package Information • Package : CP4 • JEITA, JEDEC : SC-61, SC-82AB, SOT-143, SOT-343 • Minimum Packing Quantity : 3,000 pcs./reel Packing Type: TG Marking 0.05 1.1 2.5 0.3 0.5 1.5 0.5 LOT No. RANK LOT No. 12 0.95 0.85 0.6 1 : Drain 2 : Source 3 : Gate1 4 : Gate2 CP4 TG Electrical Connection 1 3 4 RJ 2 Semiconductor Components Industries, LLC, 2014 June, 2014 60914HK TA-4314/TKIM/82599TH(KT)/20696YK/63094MT(KOTO) No.4423-1/4 3SK263 Electrical Characteristics at Ta=25°C Parameter Symbol Conditions Drain-to-Source Voltage VDS VG1S=0V, VG2S=0V, ID=100mA Gate1-to-Source Cutoff Voltage VG1S(off) VDS=6V, VG2S=4V, ID=100mA Gate2-to-Source Cutoff Voltage VG2S(off) VDS=6V, VG1S=3V, ID=100mA Gate1-to-Source Leakage Current IG1SS VG1S=±6V, VG2S=VDS=0V Gate2-to-Source Leakage Current IG2SS VG2S=±6V, VG1S=VDS=0V Zero-Gate Voltage Drain Current Forward Transfer Admittance IDSX | yfs | VDS=6V, VG1S=1.5V, VG2S=4V VDS=6V, ID=10mA, VG2S=4V, f=1kHz Input Capacitance Reverse Transfer Capacitance Ciss Crss VDS=6V, f=1MHz, VG1S=0V, VG2S=4V Power Gain Noise Figure PG VDS=6V, ID=10mA, VG2S=4V, f=200MHz NF VDS=6V, ID=10mA, VG2S=4V, f=200MHz * : The 3SK263 is classified by IDSX as follows : (unit : mA) Rank 5 IDSX 5.0 to 12.0 min 15 0 0.1 Ratings typ 0.7 0.9 *5 14 2.7 0.015 18 21 1.1 max 1.3 1.6 ±50 ±50 *12 0.03 2.2 Unit V V V nA nA mA mS pF pF dB dB Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product performance may not be indicated by the Electrical Characteristics if operated under different conditions. PG, NF Specified Test Circuit f=200MHz ~20pF IN 1000pF 2 3 4 T 50Ω 47pF VG1S 1000pF 15kΩ 2 1 2 T ~20pF 12Ω 1000pF ~20pF 1 1 2 T VG2S VDS L : 1mmØ enamel wire 10mmØ OUT 50Ω Ordering Information Device 3SK263-5-TG-E Package CP4 Shipping 3,000pcs./reel memo Pb-Free No.4423-2/4 Drain Current, ID -- mA 2.4V Drain Current, ID -- mA 3SK263 20 VG2S=4.0V 16 12 ID -- VDS 2.2V 2.0V 1.8V 1.6V 8 1.4V 1.2V 4 VG1S=0.6V 0 02468 Drain-to-SIDourc-e- VoVltGag2e,SVDS -- V 25 VDS=6V 1.0V 0.8V 10 ITR02874 VG1S =2.5V 20 2.25V 2.0V 15 1.75V 10 1.5V 1.25V 5 1.0V 0.75V 0 01 234 5 Gate2-to-Source Voltage, VG2S -- V ITR02876 25 | yfs | -- ID VDS=6V f=1kHz 20 15 VG2S=6.0V 5.5V 5.0V4.5V 4.0V 10 Forward Transfer Admittance, | yfs | -- mS Drain Current, ID -- mA 25 VDS=6V 20 15 10 ID -- VG1S 3.5V 4.0V 4.5V 5.0V 5.5V 3.0V 2.5V 2.0V VG2S =6.0V 5 1.5V 0.5V 1.0V 0 0 0.5 1.0 1.5 2.0 2.5 Gate1-to-Source | yfs | V--oltaVgGe, 1VSG1S -- V ITR02875 25 VDS=6V f=1kHz 20 5.5V 5.0V 4.5V 15 V G2S=6.0V 3.5V4.0V 10 5 1.5V 1.0V 0 0 0.5 1.0 1.5 2.0 2.5 Gate1-to-Source Voltage, VG1S -- V ITR02877 Ciss -- VG2S 7 VDS=6V VG1S : VG2S=4V 5 ID=10mA f=1MHz 3 2 Input Capacitance, Ciss -- pF 5 Forward Transfer Admittance, | yfs | -- mS 3.0V 2.5V 2.0V 3.5V 3.0V 2.5V 2.0V 1.5V 1.0V Power Gain, PG -- dB 0 0 5 10 15 20 Drain Current, ID -- mA 30 VDS=6V PG, NF -- VG2S VG1S : VG2S=4V ID=10mA PG 20 f=200MHz 25 ITR02878 4 3 10 2 NF 01 --10 0 0 123456 Gate2-to-Source Voltage, VG2S -- V ITR02880 Noise Figure, NF -- dB Allowable Power Dissipation, PD -- mW 1.0 --1 240 01234 Gate2-to-Source Voltage, VG2S -- V ITR02879 PD -- Ta 200 160 120 80 40 0 0 20 40 60 80 100 120 140 Ambient Temperature, Ta -- °C ITR02881 No.4423-3/4 Outline Drawing 3SK263-5-TG-E 3SK263 Land Pattern Example Mass (g) Unit 0.013 * For reference mm 1.9 Unit: mm 2.4 1.0 0.8 1.2 1.8 ON Semiconductor and the ON logo are registered trademarks of Semiconductor Components Industries, LLC (SCILLC). SCILLC owns the rights to a number of patents, trademarks, copyrights, trade secrets, and other intellectual property. A listing of SCILLC’s product/patent coverage may be accessed at www.onsemi.com/site/pdf/Patent-Marking.pdf. SCILLC reserves the right to make changes without further notice to any products herein. SCILLC makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does SCILLC assume any .


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