BXL4001

Ordering number : ENA1459 BXL4001 SANYO Semiconductors DATA SHEET BXL4001 N-Channel Silicon MOSFET General-Purpose Switching Device Applications Features Low ON-resistance. Motor drive. Avalanche resistance guarantee. 10V drive. Specifications Absolute Maximum Ratings at Ta=25°C Parameter Drain-to-Source Voltage Gate-to-Source Voltage Drain Current (DC) Drain Current (Pulse) Symbol VDSS VGSS ID IDP Allowable Power Dissipation PD Channel Temperature Storage Temperature Avalanche Energy (Single Pulse) *1 Avalanche Current *2 Note :*1 VDD=30V, L=100μH, IAV=51A *2 L≤100μH, Single pulse Tch Tstg EAS IAV Electrical Characteristics at Ta=25°C Conditions PW≤10μs, duty cycle≤1% Tc=25°C Ratings 75 ±20 85 340 1.75 75 150 --55 to +150 211 51 Unit V V A A W W °C °C mJ A Parameter Drain-to-Source Breakdown Voltage Zero-Gate Voltage Drain Current Gate-to-Source Leakage Current Marking : XL4001 Symbol V(BR)DSS IDSS IGSS Conditions ID=1mA, VGS=0V VDS=75V, VGS=0V VGS=±16V, VDS=0V min 75 Ratings typ max 1 ±10 Unit V μA μA Continued on next page. Any and all SANYO Semiconductor Co.,Ltd. products described or contained herein are, with regard to "standard application", intended for the use as general electronics equipment (home appliances, AV equipment, communication device, office equipment, industrial equipment etc.). The products mentioned herein shall not be intended for use for any "special application" (medical equipment whose purpose is to sustain life, aer...