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BXL4004 Dataheets PDF



Part Number BXL4004
Manufacturers Sanyo
Logo Sanyo
Description N-Channel Silicon MOSFET
Datasheet BXL4004 DatasheetBXL4004 Datasheet (PDF)

Ordering number : EN9050A BXL4004 SANYO Semiconductors DATA SHEET BXL4004 N-Channel Silicon MOSFET General-Purpose Switching Device Applications Features • ON-resistance RDS(on)1=3mΩ (typ.) • 4.5V drive • Input capacitance Ciss=8200pF (typ.) Specifications Absolute Maximum Ratings at Ta=25°C Parameter Symbol Drain-to-Source Voltage Gate-to-Source Voltage Drain Current (DC) Drain Current (Pulse) VDSS VGSS ID IDP Allowable Power Dissipation PD Channel Temperature Tch Storage Tempe.

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Ordering number : EN9050A BXL4004 SANYO Semiconductors DATA SHEET BXL4004 N-Channel Silicon MOSFET General-Purpose Switching Device Applications Features • ON-resistance RDS(on)1=3mΩ (typ.) • 4.5V drive • Input capacitance Ciss=8200pF (typ.) Specifications Absolute Maximum Ratings at Ta=25°C Parameter Symbol Drain-to-Source Voltage Gate-to-Source Voltage Drain Current (DC) Drain Current (Pulse) VDSS VGSS ID IDP Allowable Power Dissipation PD Channel Temperature Tch Storage Temperature Tstg Avalanche Energy (Single Pulse) *1 EAS Avalanche Current *2 IAV Note :*1 VDD=24V, L=100μH, IAV=60A (Fig.1) *2 L≤100μH, Single pulse Conditions PW≤10μs, duty cycle≤1% Tc=25°C Ratings 40 ±20 100 400 1.75 75 150 --55 to +150 420 60 Unit V V A A W W °C °C mJ A Package Dimensions unit : mm (typ) 7536-001 10.0 3.6 4.5 1.3 BXL4004-1E Product & Package Information • Package : TO-220-3L • JEITA, JEDEC : SC-46, TO-220AB • Minimum Packing Quantity : 50 pcs./magazine Marking Electrical Connection 2 2.8 15.7 3.0 9.2 1.3 (1.7) 13.08 (0.6) 8.9 MAX 1.52 1.27 0.8 0.5 13.3 XL4004 LOT No. 1 3 123 2.54 2.54 2.4 1 : Gate 2 : Drain 3 : Source SANYO : TO-220-3L http://www.sanyosemi.com/en/network/ 82912 TKIM TC-00002738/41112QA TKIM TC-00002736 No.9050-1/7 BXL4004 Electrical Characteristics at Ta=25°C Parameter Symbol Conditions Drain-to-Source Breakdown Voltage Zero-Gate Voltage Drain Current Gate-to-Source Leakage Current Cutoff Voltage Forward Transfer Admittance Static Drain-to-Source On-State Resistance Input Capacitance Output Capacitance Reverse Transfer Capacitance Turn-ON Delay Time Rise Time Turn-OFF Delay Time Fall Time Total Gate Charge Gate-to-Source Charge Gate-to-Drain “Miller” Charge Diode Forward Voltage Reverse Recovery Time Reverse Recovery Charge V(BR)DSS IDSS IGSS VGS(off) | yfs | RDS(on)1 RDS(on)2 Ciss Coss Crss td(on) tr td(off) tf Qg Qgs Qgd VSD trr Qrr ID=1mA, VGS=0V VDS=40V, VGS=0V VGS=±16V, VDS=0V VDS=10V, ID=1mA VDS=10V, ID=50A ID=50A, VGS=10V ID=50A, VGS=4.5V VDS=20V, f=1MHz See Fig.2 VDS=24V, VGS=10V, ID=100A IS=100A, VGS=0V See Fig.3 IS=100A, VGS=0V, di/dt=100A/μs min 40 Ratings typ 1.2 120 3 4.7 8200 940 700 65 390 510 360 140 43 25 1.0 90 230 max 10 ±10 2.6 3.9 6.6 1.2 Unit V μA μA V S mΩ mΩ pF pF pF ns ns ns ns nC nC nC V ns nC Fig.1 Unclamped Inductive Switching Test Circuit Fig.2 Switching Time Test Circuit ≥50Ω L VIN 10V 0V VIN VDD=24V ID=50A RL=0.48Ω 10V 0V 50Ω BXL4004 VDD PW=10μs D.C.≤1% G D VOUT BXL4004 P.G 50Ω S Fig.3 Reverse Recovery Time Test Circuit BXL4004 D G L S VDD Driver MOSFET Ordering Information Device BXL4004-1E Package TO-220-3L Shipping 50pcs./magazine memo Pb Free and Halogen Free No.9050-2/7 BXL4004 Drain Current, ID -- A 8V 10V 6V Static Drain-to-Source On-State Resistance, RDS(on) -- mΩ 200 Tc=25°C 180 ID -- VDS 4.5V 160 140 120 100 80 60 VGS=3.5V 40 20 0 0 0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6 1.8 2.0 9 Drain-to-Source RDS(on) Vo--ltagVeG, VSDS -- V IT16817 ID=50A 8 Single pulse 7 6 5 Tc=75°C 4 25°C 3 2 --25°C 1 0 0 1000 7 5 3 2 100 7 5 3 2 10 7 5 3 2 1.0 0.1 1000 7 5 3 2 100 7 5 1 2 3 4 5 6 7 8 9 10 Gate-to-Source | yfs V| o-l-tagIeD, VGS -- V IT16819 VDS=10V 25°C Tc= --25°C 75°C 2 3 5 7 1.0 2 3 5 7 10 2 3 5 7 100 Drain Current, SW Time I-D- -- A ID IT16821 td(off) tf tr td(on) 3 2 VDD=24V 10 VGS=10V 0.1 2 3 5 7 1.0 2 3 5 7 10 Drain Current, ID -- A 23 5 7 100 IT16823 Ciss, Coss, Crss -- pF Source Current, IS -- A Tc=75°C 25°C --25°C Static Drain-to-Source On-State Resistance, RDS(on) -- mΩ Drain Current, ID -- A ID -- VGS 200 VDS=10V 180 Tc= --25°C 75°C 25°C 160 140 120 100 80 25°C --25°C Tc=75°C 60 40 20 0 01234567 Gate-to-Source Voltage, RDS(on) -- VTcGS -- V IT16818 9 Single pulse 8 7 6 5 VGS=4.5V, ID=50A 4 VGS=10V, ID=50A 3 2 1 0 --50 100075 32 10075 3 2 1075 32 1.075 3 2 0.175 3 2 0.01 0 100000 7 5 3 2 10000 7 5 3 2 1000 7 5 3 2 100 0 --25 0 25 50 75 100 125 150 Case Temperature, Tc -- °C IS -- VSD IT16820 VGS=0V Single pulse 0.2 0.4 0.6 0.8 1.0 1.2 Diode Ciss, Forward Voltage, Coss, Crss V-S-D -- V VDS IT16822 f=1MHz Ciss Coss Crss 5 10 15 20 25 30 Drain-to-Source Voltage, VDS -- V IT16824 No.9050-3/7 Forward Transfer Admittance, | yfs | -- S Switching Time, SW Time -- ns Gate-to-Source Voltage, VGS -- V Allowable Power Dissipation, PD -- W BXL4004 10 VDS=24V 9 ID=100A 8 VGS -- Qg 7 6 5 4 3 2 1 0 0 20 40 60 80 100 Total Gate Charge, Qg -- nC 2.5 PD -- Ta 120 140 IT16825 2.0 1.75 1.5 1.0 0.5 0 0 20 40 60 80 100 120 140 160 Ambient Temperature, Ta -- °C IT16828 EAS -- Ta 120 Allowable Power Dissipation, PD -- W Drain Current, ID -- A ASO 1000 7 5 IDP=400A(PW≤10μs) 3 2 100 7 5 3 2 10 ID=100A Operation in DC 1001m0ms s1ms operation 7 5 this area is 3 limited by RDS(on). 2 100μs10μs 1.0 7 5 3 2 Tc=25°C 0.1 Single pulse 0.1 2 3 5 7 1.0 2 3 5 7 10 23 80 Drain-to-.


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