Document
Ordering number : EN9050A
BXL4004
SANYO Semiconductors
DATA SHEET
BXL4004
N-Channel Silicon MOSFET
General-Purpose Switching Device Applications
Features
• ON-resistance RDS(on)1=3mΩ (typ.) • 4.5V drive
• Input capacitance Ciss=8200pF (typ.)
Specifications
Absolute Maximum Ratings at Ta=25°C
Parameter
Symbol
Drain-to-Source Voltage Gate-to-Source Voltage Drain Current (DC) Drain Current (Pulse)
VDSS VGSS ID IDP
Allowable Power Dissipation
PD
Channel Temperature
Tch
Storage Temperature
Tstg
Avalanche Energy (Single Pulse) *1
EAS
Avalanche Current *2
IAV
Note :*1 VDD=24V, L=100μH, IAV=60A (Fig.1) *2 L≤100μH, Single pulse
Conditions
PW≤10μs, duty cycle≤1% Tc=25°C
Ratings 40
±20 100 400 1.75
75 150 --55 to +150 420
60
Unit V V A A W W °C °C mJ A
Package Dimensions unit : mm (typ) 7536-001
10.0 3.6
4.5 1.3
BXL4004-1E
Product & Package Information
• Package
: TO-220-3L
• JEITA, JEDEC
: SC-46, TO-220AB
• Minimum Packing Quantity : 50 pcs./magazine
Marking
Electrical Connection
2
2.8 15.7
3.0 9.2 1.3 (1.7)
13.08
(0.6) 8.9 MAX
1.52 1.27 0.8 0.5
13.3
XL4004
LOT No.
1 3
123 2.54 2.54
2.4
1 : Gate 2 : Drain 3 : Source
SANYO : TO-220-3L
http://www.sanyosemi.com/en/network/ 82912 TKIM TC-00002738/41112QA TKIM TC-00002736 No.9050-1/7
BXL4004
Electrical Characteristics at Ta=25°C
Parameter
Symbol
Conditions
Drain-to-Source Breakdown Voltage Zero-Gate Voltage Drain Current Gate-to-Source Leakage Current Cutoff Voltage Forward Transfer Admittance
Static Drain-to-Source On-State Resistance
Input Capacitance Output Capacitance Reverse Transfer Capacitance Turn-ON Delay Time Rise Time Turn-OFF Delay Time Fall Time Total Gate Charge Gate-to-Source Charge Gate-to-Drain “Miller” Charge Diode Forward Voltage Reverse Recovery Time Reverse Recovery Charge
V(BR)DSS
IDSS
IGSS
VGS(off)
| yfs |
RDS(on)1
RDS(on)2 Ciss Coss Crss td(on) tr td(off) tf Qg Qgs Qgd VSD trr Qrr
ID=1mA, VGS=0V VDS=40V, VGS=0V VGS=±16V, VDS=0V VDS=10V, ID=1mA VDS=10V, ID=50A ID=50A, VGS=10V ID=50A, VGS=4.5V
VDS=20V, f=1MHz
See Fig.2
VDS=24V, VGS=10V, ID=100A
IS=100A, VGS=0V See Fig.3 IS=100A, VGS=0V, di/dt=100A/μs
min 40
Ratings typ
1.2 120 3 4.7
8200 940 700 65 390 510 360 140 43 25 1.0 90 230
max 10
±10 2.6 3.9 6.6
1.2
Unit
V μA μA V S
mΩ
mΩ pF pF pF ns ns ns ns nC nC nC V ns nC
Fig.1 Unclamped Inductive Switching Test Circuit Fig.2 Switching Time Test Circuit
≥50Ω
L
VIN 10V
0V
VIN
VDD=24V
ID=50A RL=0.48Ω
10V 0V
50Ω
BXL4004
VDD
PW=10μs D.C.≤1%
G
D
VOUT
BXL4004 P.G 50Ω S
Fig.3 Reverse Recovery Time Test Circuit
BXL4004 D G
L
S
VDD
Driver MOSFET
Ordering Information
Device BXL4004-1E
Package TO-220-3L
Shipping 50pcs./magazine
memo Pb Free and Halogen Free
No.9050-2/7
BXL4004
Drain Current, ID -- A 8V 10V 6V
Static Drain-to-Source On-State Resistance, RDS(on) -- mΩ
200
Tc=25°C
180
ID -- VDS
4.5V
160
140
120
100
80
60
VGS=3.5V
40
20
0 0 0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6 1.8 2.0
9
Drain-to-Source
RDS(on)
Vo--ltagVeG, VSDS
--
V
IT16817
ID=50A
8 Single pulse
7
6
5
Tc=75°C
4
25°C
3
2 --25°C
1
0 0
1000 7 5 3 2
100 7 5 3 2
10 7 5 3 2
1.0 0.1
1000 7 5
3 2
100 7 5
1 2 3 4 5 6 7 8 9 10
Gate-to-Source
| yfs
V| o-l-tagIeD, VGS
--
V
IT16819
VDS=10V
25°C
Tc=
--25°C 75°C
2 3 5 7 1.0 2 3 5 7 10 2 3 5 7 100
Drain Current,
SW Time
I-D-
-- A
ID
IT16821
td(off)
tf
tr td(on)
3
2
VDD=24V
10 VGS=10V
0.1 2 3 5 7 1.0
2 3 5 7 10
Drain Current, ID -- A
23
5 7 100 IT16823
Ciss, Coss, Crss -- pF
Source Current, IS -- A Tc=75°C
25°C --25°C
Static Drain-to-Source On-State Resistance, RDS(on) -- mΩ
Drain Current, ID -- A
ID -- VGS
200
VDS=10V
180
Tc= --25°C 75°C
25°C
160
140
120
100
80
25°C --25°C Tc=75°C
60
40
20
0 01234567
Gate-to-Source Voltage,
RDS(on) --
VTcGS
--
V
IT16818
9
Single pulse
8
7
6 5
VGS=4.5V, ID=50A
4 VGS=10V, ID=50A
3
2
1
0 --50
100075 32
10075 3 2
1075 32
1.075 3 2
0.175 3 2
0.01 0
100000 7 5 3 2
10000 7 5 3 2
1000 7 5 3 2
100 0
--25 0
25 50 75 100 125 150
Case Temperature, Tc -- °C
IS -- VSD
IT16820
VGS=0V Single pulse
0.2 0.4 0.6 0.8 1.0 1.2
Diode
Ciss,
Forward Voltage,
Coss, Crss
V-S-D
-- V
VDS
IT16822
f=1MHz
Ciss
Coss Crss
5 10 15 20 25 30
Drain-to-Source Voltage, VDS -- V IT16824
No.9050-3/7
Forward Transfer Admittance, | yfs | -- S
Switching Time, SW Time -- ns
Gate-to-Source Voltage, VGS -- V
Allowable Power Dissipation, PD -- W
BXL4004
10
VDS=24V 9 ID=100A
8
VGS -- Qg
7
6
5
4
3
2
1
0 0 20 40 60 80 100
Total Gate Charge, Qg -- nC
2.5 PD -- Ta
120 140 IT16825
2.0 1.75
1.5
1.0
0.5
0 0 20 40 60 80 100 120 140 160
Ambient Temperature, Ta -- °C
IT16828
EAS -- Ta
120
Allowable Power Dissipation, PD -- W
Drain Current, ID -- A
ASO
1000
7 5
IDP=400A(PW≤10μs)
3 2
100 7 5 3 2
10
ID=100A Operation
in
DC
1001m0ms s1ms operation
7 5
this area is
3 limited by RDS(on).
2
100μs10μs
1.0 7 5
3 2
Tc=25°C
0.1 Single pulse
0.1 2 3 5 7 1.0
2 3 5 7 10
23
80
Drain-to-.