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ECH8602M Dataheets PDF



Part Number ECH8602M
Manufacturers ON Semiconductor
Logo ON Semiconductor
Description N-Channel Power MOSFET
Datasheet ECH8602M DatasheetECH8602M Datasheet (PDF)

Ordering number : ENA1562A ECH8602M N-Channel Power MOSFET 30V, 6A, 30mΩ, Dual ECH8 http://onsemi.com Features • 2.5V drive • Common-drain type • Protection diode in • Best suited for LiB charging and discharging switch • Halogen free compliance Specifications Absolute Maximum Ratings at Ta=25°C Parameter Symbol Drain-to-Source Voltage Gate-to-Source Voltage Drain Current (DC) Drain Current (Pulse) Allowable Power Dissipation Total Dissipation Channel Temperature VDSS VGSS ID IDP PD PT .

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Ordering number : ENA1562A ECH8602M N-Channel Power MOSFET 30V, 6A, 30mΩ, Dual ECH8 http://onsemi.com Features • 2.5V drive • Common-drain type • Protection diode in • Best suited for LiB charging and discharging switch • Halogen free compliance Specifications Absolute Maximum Ratings at Ta=25°C Parameter Symbol Drain-to-Source Voltage Gate-to-Source Voltage Drain Current (DC) Drain Current (Pulse) Allowable Power Dissipation Total Dissipation Channel Temperature VDSS VGSS ID IDP PD PT Tch Storage Temperature Tstg Conditions PW≤10μs, duty cycle≤1% When mounted on ceramic substrate (900mm2×0.8mm) 1unit When mounted on ceramic substrate (900mm2×0.8mm) Ratings 30 ±12 6 60 1.4 1.5 150 --55 to +150 Unit V V A A W W °C °C Stresses exceeding Maximum Ratings may damage the device. Maximum Ratings are stress ratings only. Functional operation above the Recommended Operating Conditions is not implied. Extended exposure to stresses above the Recommended Operating Conditions may affect device reliability. Package Dimensions unit : mm (typ) 7011A-003 Top View 2.9 85 ECH8602M-TL-H 0.15 0 to 0.02 Product & Package Information • Package : ECH8 • JEITA, JEDEC :- • Minimum Packing Quantity : 3,000 pcs./reel Packing Type : TL Marking TZ TL Lot No. 2.8 0.9 0.25 2.3 0.25 1 0.65 4 0.3 Bottom View 1 : Source1 2 : Gate1 3 : Source2 4 : Gate2 5 : Drain 6 : Drain 7 : Drain 8 : Drain ECH8 Electrical Connection 8765 1234 0.07 Semiconductor Components Industries, LLC, 2013 July, 2013 71112 TKIM/21710PE TKIM TC-00002221 No. A1562-1/7 ECH8602M Electrical Characteristics at Ta=25°C Parameter Symbol Drain-to-Source Breakdown Voltage Zero-Gate Voltage Drain Current Gate-to-Source Leakage Current Cutoff Voltage Forward Transfer Admittance Static Drain-to-Source On-State Resistance Turn-ON Delay Time Rise Time Turn-OFF Delay Time Fall Time Total Gate Charge Gate-to-Source Charge Gate-to-Drain “Miller” Charge Diode Forward Voltage V(BR)DSS IDSS IGSS VGS(off) | yfs | RDS(on)1 RDS(on)2 RDS(on)3 td(on) tr td(off) tf Qg Qgs Qgd VSD Conditions ID=1mA, VGS=0V VDS=30V, VGS=0V VGS=±8V, VDS=0V VDS=10V, ID=1mA VDS=10V, ID=3A ID=3A, VGS=4.5V ID=3A, VGS=4.0V ID=1.5A, VGS=2.5V See specified Test Circuit. VDS=15V, VGS=4.5V, ID=6A IS=6A, VGS=0V Switching Time Test Circuit VIN 4.5V 0V VIN PW=10μs D.C.≤1% G VDD=15V ID=3A RL=5Ω D VOUT Rg ECH8602M P.G 50Ω S Rg=1kΩ Ordering Information Device ECH8602M-TL-H Package ECH8 Shipping 3,000pcs./reel min 30 Ratings typ 0.5 15.4 16.1 18 5 22 23 30 305 490 3500 1200 7.5 1.7 1.6 0.8 max 1 ±10 1.3 30 31 44 1.2 Unit V μA μA V S mΩ mΩ mΩ ns ns ns ns nC nC nC V memo Pb Free and Halogen Free No. A1562-2/7 ECH8602M Drain Current, ID -- A 10.0V 4.5V 4.0V 2.5V 2.0V Static Drain-to-Source On-State Resistance, RDS(on) -- mΩ 6.0 ID -- VDS 5.5 5.0 4.5 VGS=1.5V 4.0 3.5 3.0 2.5 2.0 1.5 1.0 0.5 0 0 0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.8 0.9 1.0 70 Drain-Rto-DSoSu(rocenV) ol-t-ageV, GVDSS -- V IT15055 Ta=25°C 60 ID=1.5A 50 3A 40 30 20 10 0 0 2 4 6 8 10 12 2 Gate-to-Source | yfs V| ol-t-ageID, VGS -- V IT15309 VDS=10V 10 7 5 3 2 Ta= --25°C75°C 1.0 25°C 7 5 3 2 0.1 0.01 2 3 5 7 0.1 2 3 5 7 1.0 2 3 5 7 10 2 Drain SW Current, Time I-D- -- A ID IT15051 7 5 td(off) VDD=15V VGS=4.5V 3 2 1000 7 5 3 tf tr td(on) 2 100 0.1 23 5 7 1.0 2 3 5 7 10 23 Drain Current, ID -- A IT15053 Gate-to-Source Voltage, VGS -- V Static Drain-to-Source On-State Resistance, RDS(on) -- mΩ Source Current, IS -- A Ta=75°C 25°C --25°C Drain Current, ID -- A 12 11 VDS=10V ID -- VGS 10 9 8 7 6 5 Ta=75°C --25°C 4 3 2 25°C 1 0 0 0.5 1.0 1.5 2.0 70 Gate-to-Source Voltage, RDS(on) -- TVaGS -- V 2.5 IT15048 60 50 40 30 20 VVGVGS=GS2=S.4=5.V40.,V5I,VDI,=DI1=D.35=AA3A 10 0 --60 --40 --20 0 20 40 60 80 100 120 140 160 Ambient Temperature, Ta -- °C IT15310 3 IS -- VSD 2 VGS=0V 10 75 3 2 1.0 7 5 3 2 0.1 7 5 3 2 0.01 7 5 3 2 0.001 0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.8 0.9 1.0 1.1 4.5 Diode ForVwGarSd Vo--ltagQe,gVSD -- V VDS=15V 4.0 ID=6A IT15052 3.5 3.0 2.5 2.0 1.5 1.0 0.5 0 012345678 Total Gate Charge, Qg -- nC IT15311 No. A1562-3/7 Forward Transfer Admittance, | yfs | -- S Switching Time, SW Time -- ns Drain Current, ID -- A Allowable Power Dissipation, PD -- W ECH8602M ASO 2 100 7 IDP=60A 5 3 2 PW≤10μs 100μs 10 7 5 3 2 1.0 7 5 3 2 ID=6A Operation in this area is limited by DC RDS(on). 1001m0sm1sms operation 0.1 7 5 3 2 0.01 Ta=25°C Single pulse When mounted on ceramic substrate (900mm2×0.8mm) 0.01 2 3 5 7 0.1 2 3 5 7 1.0 2 3 5 7 10 2 3 5 Drain-to-Source Voltage, VDS -- V IT15058 1.8 1.6 1.5 1.4 1.2 1.0 0.8 0.6 0.4 0.2 0 0 PD -- Ta When mounted on ceramic substrate (900mm2×0.8mm) T1outanlitDissipation 20 40 60 80 100 120 140 160 Ambient Temperature, Ta -- °C IT5059 No. A1562-4/7 Embossed Taping Specification ECH8602M-TL-H ECH8602M No. A1562-5/7 Outline Drawing ECH8602M-TL-H ECH8602M Land Pattern Example Mas.


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