Document
Ordering number : ENA1562A
ECH8602M
N-Channel Power MOSFET
30V, 6A, 30mΩ, Dual ECH8
http://onsemi.com
Features
• 2.5V drive • Common-drain type • Protection diode in
• Best suited for LiB charging and discharging switch • Halogen free compliance
Specifications
Absolute Maximum Ratings at Ta=25°C
Parameter
Symbol
Drain-to-Source Voltage Gate-to-Source Voltage Drain Current (DC) Drain Current (Pulse) Allowable Power Dissipation Total Dissipation Channel Temperature
VDSS VGSS ID IDP PD PT Tch
Storage Temperature
Tstg
Conditions
PW≤10μs, duty cycle≤1% When mounted on ceramic substrate (900mm2×0.8mm) 1unit When mounted on ceramic substrate (900mm2×0.8mm)
Ratings 30
±12 6
60 1.4 1.5 150 --55 to +150
Unit V V A A W W °C °C
Stresses exceeding Maximum Ratings may damage the device. Maximum Ratings are stress ratings only. Functional operation above the Recommended Operating Conditions is not implied. Extended exposure to stresses above the Recommended Operating Conditions may affect device reliability.
Package Dimensions unit : mm (typ) 7011A-003
Top View 2.9
85
ECH8602M-TL-H
0.15 0 to 0.02
Product & Package Information
• Package
: ECH8
• JEITA, JEDEC
:-
• Minimum Packing Quantity : 3,000 pcs./reel
Packing Type : TL
Marking
TZ
TL Lot No.
2.8 0.9 0.25 2.3 0.25
1 0.65
4 0.3
Bottom View
1 : Source1 2 : Gate1 3 : Source2 4 : Gate2 5 : Drain 6 : Drain 7 : Drain 8 : Drain
ECH8
Electrical Connection
8765
1234
0.07
Semiconductor Components Industries, LLC, 2013 July, 2013
71112 TKIM/21710PE TKIM TC-00002221 No. A1562-1/7
ECH8602M
Electrical Characteristics at Ta=25°C
Parameter
Symbol
Drain-to-Source Breakdown Voltage Zero-Gate Voltage Drain Current Gate-to-Source Leakage Current Cutoff Voltage Forward Transfer Admittance
Static Drain-to-Source On-State Resistance
Turn-ON Delay Time Rise Time Turn-OFF Delay Time Fall Time Total Gate Charge Gate-to-Source Charge Gate-to-Drain “Miller” Charge Diode Forward Voltage
V(BR)DSS IDSS IGSS VGS(off) | yfs | RDS(on)1 RDS(on)2 RDS(on)3 td(on) tr td(off) tf Qg
Qgs
Qgd
VSD
Conditions ID=1mA, VGS=0V VDS=30V, VGS=0V VGS=±8V, VDS=0V VDS=10V, ID=1mA VDS=10V, ID=3A ID=3A, VGS=4.5V ID=3A, VGS=4.0V ID=1.5A, VGS=2.5V
See specified Test Circuit.
VDS=15V, VGS=4.5V, ID=6A
IS=6A, VGS=0V
Switching Time Test Circuit
VIN 4.5V
0V
VIN
PW=10μs D.C.≤1%
G
VDD=15V
ID=3A RL=5Ω D VOUT
Rg
ECH8602M P.G 50Ω S
Rg=1kΩ
Ordering Information
Device ECH8602M-TL-H
Package ECH8
Shipping 3,000pcs./reel
min 30
Ratings typ
0.5
15.4 16.1
18
5 22 23 30 305 490 3500 1200 7.5 1.7 1.6 0.8
max 1
±10 1.3 30 31 44
1.2
Unit
V μA μA V S mΩ mΩ mΩ ns ns ns ns nC nC nC V
memo Pb Free and Halogen Free
No. A1562-2/7
ECH8602M
Drain Current, ID -- A 10.0V 4.5V 4.0V 2.5V 2.0V
Static Drain-to-Source On-State Resistance, RDS(on) -- mΩ
6.0 ID -- VDS
5.5 5.0
4.5 VGS=1.5V
4.0 3.5 3.0 2.5 2.0 1.5 1.0 0.5
0 0 0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.8 0.9 1.0
70 Drain-Rto-DSoSu(rocenV) ol-t-ageV, GVDSS -- V IT15055
Ta=25°C
60
ID=1.5A
50 3A
40
30
20
10
0 0 2 4 6 8 10 12
2
Gate-to-Source
| yfs
V| ol-t-ageID, VGS
--
V
IT15309
VDS=10V
10
7
5
3 2
Ta= --25°C75°C
1.0 25°C
7 5
3 2
0.1 0.01 2 3 5 7 0.1
2 3 5 7 1.0
2 3 5 7 10
2
Drain
SW
Current,
Time
I-D-
-- A
ID
IT15051
7
5
td(off)
VDD=15V VGS=4.5V
3
2
1000 7 5 3
tf
tr td(on)
2
100 0.1
23
5 7 1.0
2 3 5 7 10
23
Drain Current, ID -- A
IT15053
Gate-to-Source Voltage, VGS -- V
Static Drain-to-Source On-State Resistance, RDS(on) -- mΩ
Source Current, IS -- A Ta=75°C
25°C --25°C
Drain Current, ID -- A
12
11 VDS=10V
ID -- VGS
10
9
8
7
6
5
Ta=75°C --25°C
4
3
2
25°C
1
0 0 0.5 1.0 1.5 2.0
70
Gate-to-Source Voltage,
RDS(on) --
TVaGS
--
V
2.5 IT15048
60
50
40 30 20
VVGVGS=GS2=S.4=5.V40.,V5I,VDI,=DI1=D.35=AA3A
10
0 --60 --40 --20 0
20 40 60 80 100 120 140 160
Ambient Temperature, Ta -- °C
IT15310
3 IS -- VSD
2 VGS=0V
10 75
3
2
1.0 7 5 3 2
0.1 7 5 3 2
0.01 7 5 3 2
0.001 0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.8 0.9 1.0 1.1
4.5 Diode ForVwGarSd Vo--ltagQe,gVSD -- V
VDS=15V 4.0 ID=6A
IT15052
3.5
3.0
2.5
2.0
1.5
1.0
0.5
0 012345678
Total Gate Charge, Qg -- nC
IT15311
No. A1562-3/7
Forward Transfer Admittance, | yfs | -- S
Switching Time, SW Time -- ns
Drain Current, ID -- A Allowable Power Dissipation, PD -- W
ECH8602M
ASO
2
100 7
IDP=60A
5
3 2
PW≤10μs 100μs
10 7 5 3 2
1.0 7 5 3 2
ID=6A
Operation in this area is limited by
DC RDS(on).
1001m0sm1sms operation
0.1
7
5 3 2
0.01
Ta=25°C Single pulse When mounted on ceramic substrate (900mm2×0.8mm)
0.01 2 3 5 7 0.1 2 3 5 7 1.0 2 3 5 7 10 2 3
5
Drain-to-Source Voltage, VDS -- V IT15058
1.8
1.6 1.5 1.4
1.2
1.0
0.8
0.6
0.4
0.2 0 0
PD -- Ta
When mounted on ceramic substrate (900mm2×0.8mm)
T1outanlitDissipation
20 40 60 80 100 120 140 160
Ambient Temperature, Ta -- °C
IT5059
No. A1562-4/7
Embossed Taping Specification ECH8602M-TL-H
ECH8602M
No. A1562-5/7
Outline Drawing ECH8602M-TL-H
ECH8602M
Land Pattern Example
Mas.