Document
MOSFET – Power, for 1-Cell Lithium-ion Battery Protection, Dual N-Channel
12 V, 13 A, 9.0 mW
EFC6604R
This Power MOSFET features a low on−state resistance. This device is suitable for applications such as power switches of portable machines. Best suited for 1−cell lithium−ion battery applications.
Features
• 2.5 V Drive • 2 kV ESD HBM • Common−Drain Type • ESD Diode−Protected Gate • This Device is Pb−Free, Halogen Free/BFR Free and is RoHS
Compliant
Applications
• 1−Cell Lithium−ion Battery Charging and Discharging Switch
Specifications
ABSOLUTE MAXIMUM RATINGS (TA = 25°C)
Parameter
Symbol Value Unit
Source−to−Source Voltage
Gate−to−Source Voltage
Source Current (DC)
Source Current (Pulse) PW ≤ 10 ms, duty cycle ≤ 1%
VSSS
12
V
VGSS
±12
V
IS
13
A
ISP
60
A
Total Dissipation (Note 1) Junction Temperature Storage Temperature
PT
1.6
W
TJ
150
°C
TSTG − 55 to °C +150
Stresses exceeding those listed in the Maximum Ratings table may damage the device. If any of these limits are exceeded, device functionality should not be assumed, damage may occur and reliability may be affected.
THERMAL RESISTANCE RATINGS
Parameter
Symbol Value
Junction to Ambient (Note 1)
RqJA
78.1
1. Surface mounted on ceramic substrate (5000 mm2 x 0.8 mm)
Unit °C/W
PIN ASSIGNMENT
6 54
123 (Top View)
1: Source1 2: Gate1 3: Source1 4: Source2 5: Gate2 6: Source2
DATA SHEET www.onsemi.com
VSSS 12 V
RSS(on) Max 9.0 mW @ 4.5 V 9.7 mW @ 4.0 V 10.0 mW @ 3.8 V 12.7 mW @ 3.1 V 17.7 mW @ 2.5 V
IS Max 13 A
WLCSP6 1.91x1.46 / EFCP1915−6CE−020 CASE 614AC
MARKING DIAGRAM
MD YMZZ
MD = Specific Device Code Y = Year of Production M = Assembly Operation Month ZZ = Assembly Lot Number
ELECTRICAL CONNECTION N−Channel 4, 6
Rg 5
Rg 2
Rg = 200 W
1, 3
1: Source1 2: Gate1 3: Source1 4: Source2 5: Gate2 6: Source2
ORDERING INFORMATION
Device
Package
Shipping
EFC6604R−TR WLCSP6 (Pb−Free and Halogen Free)
5000 / Tape & Reel
†For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging Specifications Brochure, BRD8011/D.
© Semiconductor Components Industries, LLC, 2016
1
November, 2022 − Rev. 3
Publication Order Number: EFC6604R/D
EFC6604R
ELECTRICAL CHARACTERISTICS (TA = 25°C)
Parameter
Symbol
Conditions
Min Typ Max Unit
Source−to−Source Breakdown Voltage V(BR)SSS IS = 1 mA, VGS = 0 V
Zero−Gate Voltage Source Current
ISSS VSS = 10 V, VGS = 0 V
Gate−to−Source Leakage Current
IGSS VGS = ±8 V, VSS = 0 V
Gate Threshold Voltage
VGS(th) VSS = 6 V, IS = 1 mA
Forward Transconductance
gFS
VSS = 6 V, IS = 3 A
Static Source−to−Source On−State Resistance
RSS(on)1 IS = 3 A, VGS = 4.5 V RSS(on)2 IS = 3 A, VGS = 4.0 V
RSS(on)3 IS = 3 A, VGS = 3.8 V
RSS(on)4 IS = 3 A, VGS = 3.1 V
RSS(on)5 IS = 3 A, VGS = 2.5 V
Turn−ON Delay Time Rise Time
td(on) tr
VSS = 6 V, VGS = 4.5 V, IS = 3 A
Turn−OFF Delay Time
td(off)
Fall Time
tf
Total Gate Charge
Qg
VSS = 6 V, VGS = 4.5 V,
IS = 13 A
Test Circuit 1 Test Circuit 1 Test Circuit 2 Test Circuit 3 Test Circuit 4 Test Circuit 5 Test Circuit 5 Test Circuit 5 Test Circuit 5 Test Circuit 5 Test Circuit 6
Test Circuit 7
12
−
−
V
−
−
1
mA
−
−
±1.0 mA
0.5
−
1.3
V
−
13.7
−
S
6.0
7.5
9.0 mW
6.4
8.1
9.7 mW
6.7
8.4 10.0 mW
7.8
9.8 12.7 mW
10.0 12.6 17.7 mW
−
300
−
ns
−
1200
−
ns
−
5200
−
ns
−
3900
−
ns
−
29
−
nC
Forward Source−to−Source Voltage
VF(S−S) IS = 3 A, VGS = 0 V
Test Circuit 8
−
0.75 1.2
V
Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product performance may not be indicated by the Electrical Characteristics if operated under different conditions.
Test circuits are example of measuring FET1 side.
S2
G2
A
S2 G2
G1
VSS
S1
Figure 1. Test Circuit 1 − VSSS / ISSS
A VGS
G1
S1
When FET1 is measured,
Gate and Source of FET2
are short−circuited.
Figure 2. Test Circuit 2 − IGSS
G2
When FET1 is measured, Gate and Source of FET2 are short−circuited.
G1
VGS
S2 A
VSS S1
Figure 3. Test Circuit 3 − VGS(th)
S2
G2
A
G1 VGS
VSS
S1
When FET1 is measured,
Gate and Source of FET2
are short−circuited.
Figure 4. Test Circuit 4 − gFS
www.onsemi.com 2
EFC6604R
TEST CIRCUITS (continued)
G2
G1 VGS
S2 IS
V
S1
Figure 5. Test Circuit 5 − RSS(on)
S2 RL
G2
V G1
S1
VSS When FET1 is measured,
PG
Gate and Source of FET2 are short−circuited.
Figure 6. Test Circuit 6 − td(on), tr, td(off), tf
When FET1 is measured,
G2
Gate and Source of FET2
are short−circuited.
IG =1 mA
G1
PG
S2 A
RL S1
VSS
Figure 7. Test Circuit 7 − Qg
When FET2 is measured, the position of FET1 and FET2 is switched.
S2 IS
G2
V VGS = 0 V G1
S1
When FET1 is
measured,+4.5 V is added
to VGS of FET2.
Figure 8.