DatasheetsPDF.com

EFC6604R Dataheets PDF



Part Number EFC6604R
Manufacturers ON Semiconductor
Logo ON Semiconductor
Description N-Channel Power MOSFET
Datasheet EFC6604R DatasheetEFC6604R Datasheet (PDF)

MOSFET – Power, for 1-Cell Lithium-ion Battery Protection, Dual N-Channel 12 V, 13 A, 9.0 mW EFC6604R This Power MOSFET features a low on−state resistance. This device is suitable for applications such as power switches of portable machines. Best suited for 1−cell lithium−ion battery applications. Features • 2.5 V Drive • 2 kV ESD HBM • Common−Drain Type • ESD Diode−Protected Gate • This Device is Pb−Free, Halogen Free/BFR Free and is RoHS Compliant Applications • 1−Cell Lithium−ion Battery C.

  EFC6604R   EFC6604R


Document
MOSFET – Power, for 1-Cell Lithium-ion Battery Protection, Dual N-Channel 12 V, 13 A, 9.0 mW EFC6604R This Power MOSFET features a low on−state resistance. This device is suitable for applications such as power switches of portable machines. Best suited for 1−cell lithium−ion battery applications. Features • 2.5 V Drive • 2 kV ESD HBM • Common−Drain Type • ESD Diode−Protected Gate • This Device is Pb−Free, Halogen Free/BFR Free and is RoHS Compliant Applications • 1−Cell Lithium−ion Battery Charging and Discharging Switch Specifications ABSOLUTE MAXIMUM RATINGS (TA = 25°C) Parameter Symbol Value Unit Source−to−Source Voltage Gate−to−Source Voltage Source Current (DC) Source Current (Pulse) PW ≤ 10 ms, duty cycle ≤ 1% VSSS 12 V VGSS ±12 V IS 13 A ISP 60 A Total Dissipation (Note 1) Junction Temperature Storage Temperature PT 1.6 W TJ 150 °C TSTG − 55 to °C +150 Stresses exceeding those listed in the Maximum Ratings table may damage the device. If any of these limits are exceeded, device functionality should not be assumed, damage may occur and reliability may be affected. THERMAL RESISTANCE RATINGS Parameter Symbol Value Junction to Ambient (Note 1) RqJA 78.1 1. Surface mounted on ceramic substrate (5000 mm2 x 0.8 mm) Unit °C/W PIN ASSIGNMENT 6 54 123 (Top View) 1: Source1 2: Gate1 3: Source1 4: Source2 5: Gate2 6: Source2 DATA SHEET www.onsemi.com VSSS 12 V RSS(on) Max 9.0 mW @ 4.5 V 9.7 mW @ 4.0 V 10.0 mW @ 3.8 V 12.7 mW @ 3.1 V 17.7 mW @ 2.5 V IS Max 13 A WLCSP6 1.91x1.46 / EFCP1915−6CE−020 CASE 614AC MARKING DIAGRAM MD YMZZ MD = Specific Device Code Y = Year of Production M = Assembly Operation Month ZZ = Assembly Lot Number ELECTRICAL CONNECTION N−Channel 4, 6 Rg 5 Rg 2 Rg = 200 W 1, 3 1: Source1 2: Gate1 3: Source1 4: Source2 5: Gate2 6: Source2 ORDERING INFORMATION Device Package Shipping EFC6604R−TR WLCSP6 (Pb−Free and Halogen Free) 5000 / Tape & Reel †For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging Specifications Brochure, BRD8011/D. © Semiconductor Components Industries, LLC, 2016 1 November, 2022 − Rev. 3 Publication Order Number: EFC6604R/D EFC6604R ELECTRICAL CHARACTERISTICS (TA = 25°C) Parameter Symbol Conditions Min Typ Max Unit Source−to−Source Breakdown Voltage V(BR)SSS IS = 1 mA, VGS = 0 V Zero−Gate Voltage Source Current ISSS VSS = 10 V, VGS = 0 V Gate−to−Source Leakage Current IGSS VGS = ±8 V, VSS = 0 V Gate Threshold Voltage VGS(th) VSS = 6 V, IS = 1 mA Forward Transconductance gFS VSS = 6 V, IS = 3 A Static Source−to−Source On−State Resistance RSS(on)1 IS = 3 A, VGS = 4.5 V RSS(on)2 IS = 3 A, VGS = 4.0 V RSS(on)3 IS = 3 A, VGS = 3.8 V RSS(on)4 IS = 3 A, VGS = 3.1 V RSS(on)5 IS = 3 A, VGS = 2.5 V Turn−ON Delay Time Rise Time td(on) tr VSS = 6 V, VGS = 4.5 V, IS = 3 A Turn−OFF Delay Time td(off) Fall Time tf Total Gate Charge Qg VSS = 6 V, VGS = 4.5 V, IS = 13 A Test Circuit 1 Test Circuit 1 Test Circuit 2 Test Circuit 3 Test Circuit 4 Test Circuit 5 Test Circuit 5 Test Circuit 5 Test Circuit 5 Test Circuit 5 Test Circuit 6 Test Circuit 7 12 − − V − − 1 mA − − ±1.0 mA 0.5 − 1.3 V − 13.7 − S 6.0 7.5 9.0 mW 6.4 8.1 9.7 mW 6.7 8.4 10.0 mW 7.8 9.8 12.7 mW 10.0 12.6 17.7 mW − 300 − ns − 1200 − ns − 5200 − ns − 3900 − ns − 29 − nC Forward Source−to−Source Voltage VF(S−S) IS = 3 A, VGS = 0 V Test Circuit 8 − 0.75 1.2 V Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product performance may not be indicated by the Electrical Characteristics if operated under different conditions. Test circuits are example of measuring FET1 side. S2 G2 A S2 G2 G1 VSS S1 Figure 1. Test Circuit 1 − VSSS / ISSS A VGS G1 S1 When FET1 is measured, Gate and Source of FET2 are short−circuited. Figure 2. Test Circuit 2 − IGSS G2 When FET1 is measured, Gate and Source of FET2 are short−circuited. G1 VGS S2 A VSS S1 Figure 3. Test Circuit 3 − VGS(th) S2 G2 A G1 VGS VSS S1 When FET1 is measured, Gate and Source of FET2 are short−circuited. Figure 4. Test Circuit 4 − gFS www.onsemi.com 2 EFC6604R TEST CIRCUITS (continued) G2 G1 VGS S2 IS V S1 Figure 5. Test Circuit 5 − RSS(on) S2 RL G2 V G1 S1 VSS When FET1 is measured, PG Gate and Source of FET2 are short−circuited. Figure 6. Test Circuit 6 − td(on), tr, td(off), tf When FET1 is measured, G2 Gate and Source of FET2 are short−circuited. IG =1 mA G1 PG S2 A RL S1 VSS Figure 7. Test Circuit 7 − Qg When FET2 is measured, the position of FET1 and FET2 is switched. S2 IS G2 V VGS = 0 V G1 S1 When FET1 is measured,+4.5 V is added to VGS of FET2. Figure 8.


ECH8693R EFC6604R EMH2408


@ 2014 :: Datasheetspdf.com :: Semiconductors datasheet search & download site.
(Privacy Policy & Contact)