EMH2412

Ordering number : ENA1315A EMH2412 N-Channel Power MOSFET 24V, 6A, 27mΩ, Dual EMH8 http://onsemi.com Features Low ON-resistance Best suited for LiB charging and discharging switch Common-drain type 2.5V drive Halogen free compliance Protection diode in Specifications Absolute Maximum Ratings at Ta=25°C Parameter Symbol Drain-to-Source Voltage Gate-to-Source Voltage Drain Current (DC) Drain Current (Pulse) Allowable Power Dissipation Total Dissipation Channel Temperature VDSS VGSS ID IDP PD PT Tch Storage Temperature Tstg Conditions PW≤10μs, duty cycle≤1% When mounted on ceramic substrate (900mm2×0.8mm) 1unit When mounted on ceramic substrate (900mm2×0.8mm) Ratings 24 ±12 6 60 1.3 1.4 150 --55 to +150 Unit V V A A W W °C °C Stresses exceeding Maximum Ratings may damage the device. Maximum Ratings are stress ratings only. Functional operation above the Recommended Operating Conditions is not implied. Extended exposure to stresses above the Recommended Operating Conditions may affect device reliability. Package Dimensions unit : mm (typ) 7045-006 0.2 8 5 0.125 EMH2412-TL-H Product & Package Information Package : EMH8 JEITA, JEDEC :- Minimum Packing Quantity : 3,000 pcs./reel Taping Type : TL Marking 0.05 0.75 0.2 1.7 0.2 2.1 LM 1 0.5 2.0 4 1 : Source1 2 : Gate1 3 : Source2 4 : Gate2 5 : Drain 6 : Drain 7 : Drain 8 : Drain EMH8 TL Electrical Connection 8765 LOT No. 1234 Semiconductor Components Industries, LLC, 2013 July, 2013 ...