FW217A

Ordering number : EN8994B FW217A N-Channel Power MOSFET 35V, 6A, 39mΩ, Dual SOIC8 http://onsemi.com Features On-state resistance RDS(on)1=30mΩ (typ.) 4.5V drive Halogen free compliance Protection Diode in Specifications Absolute Maximum Ratings at Ta=25°C Parameter Drain-to-Source Voltage Gate-to-Source Voltage Drain Current (DC) Drain Current (PW≤10s) Drain Current (PW≤10μs) Allowable Power Dissipation Total Dissipation Channel Temperature Storage Temperature Symbol VDSS VGSS ID IDP IDP PD PT Tch Tstg Conditions Duty cycle≤1% Duty cycle≤1% When mounted on ceramic substrate (2000mm2×0.8mm) 1unit, PW≤10s When mounted on ceramic substrate (2000mm2×0.8mm), PW≤10s Ratings 35 ±20 6 6.5 24 1.8 2.2 150 --55 to +150 Unit V V A A A W W °C °C Stresses exceeding Maximum Ratings may damage the device. Maximum Ratings are stress ratings only. Functional operation above the Recommended Operating Conditions is not implied. Extended exposure to stresses above the Recommended Operating Conditions may affect device reliability. Package Dimensions unit : mm (typ) 7072-001 4.9 85 Product & Package Information Package : SOIC8 JEITA, JEDEC : SC-87, SOT-96 Minimum Packing Quantity : 2,500 pcs./reel FW217A-TL-2W 0.22 Packing Type : TL Marking 6.0 1.375 3.9 1 1.27 0.375 0.715 0.175 1.55 4 0.445 0.254 (GAGE PLANE) 1 : Source1 2 : Gate1 3 : Source2 4 : Gate2 5 : Drain2 6 : Drain2 7 : Drain1 8 : Drain1 SOIC8 TL Electrical Connection 8765 FW217 A LOT No. Semicond...