N-Channel Enhancement Mode Power MOSFET
http://www.ncepower.com
Pb Free Product
NCE0108AS
NCE N-Channel Enhancement Mode Power MOSFET
Description
The NCE0108A...
Description
http://www.ncepower.com
Pb Free Product
NCE0108AS
NCE N-Channel Enhancement Mode Power MOSFET
Description
The NCE0108AS uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. It can be used in a wide variety of applications.
General Features
● VDS = 100V,ID =8A RDS(ON) < 28mΩ @ VGS=10V
(Typ:22mΩ)
● Special process technology for high ESD capability ● High density cell design for ultra low Rdson ● Fully characterized avalanche voltage and current
Schematic diagram
Application
● DC/DC Primary Side Switch ● Telecom/Server ● Synchronous Rectification
Marking and pin assignment
SOP-8 top view
Package Marking and Ordering Information
Device Marking
Device
Device Package
NCE0108AS
NCE0108AS
SOP-8
Reel Size Ø330mm
Tape width 12mm
Quantity 2500 units
Absolute Maximum Ratings (TA=25℃unless otherwise noted)
Parameter
Symbol
Drain-Source Voltage
VDS
Gate-Source Voltage
VGS
Drain Current-Continuous
ID
Drain Current-Continuous(TC=100℃)
ID (100℃)
Pulsed Drain Current Maximum Power Dissipation Operating Junction and Storage Temperature Range
IDM PD TJ,TSTG
Limit
100 ±20
8 5.6 57 2.6 -55 To 150
Unit
V V A A A W ℃
Thermal Characteristic
Thermal Resistance,Junction-to-Ambient (Note 2)
RθJA
48 ℃/W
Wuxi NCE Power Semiconductor Co., Ltd
Page 1
v1.0
http://www.ncepower.com
Pb Free Product
NCE0108AS
Electrical Characteristics (TA=25℃unless otherwise noted)
Parameter
Symbol
Condition
Off Characteristics
Drain-Sourc...
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