N-Channel Enhancement Mode Power MOSFET
http://www.ncepower.com
Pb Free Product
NCE0117K
NCE N-Channel Enhancement Mode Power MOSFET
Description
The NCE0117K ...
Description
http://www.ncepower.com
Pb Free Product
NCE0117K
NCE N-Channel Enhancement Mode Power MOSFET
Description
The NCE0117K uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. It can be used in a wide variety of applications.
General Features
● VDS =100V,ID =17A RDS(ON) < 70mΩ @ VGS=10V (Typ:56mΩ)
● High density cell design for ultra low Rdson ● Fully characterized avalanche voltage and current ● Good stability and uniformity with high EAS ● Excellent package for good heat dissipation ● Special process technology for high ESD capability
Schematic diagram
Application
● Power switching application ● Hard switched and high frequency circuits
Marking and pin assignment
100% UIS TESTED!
100% ∆Vds TESTED!
TO-252-2L top view
Package Marking and Ordering Information
Device Marking
Device
Device Package
NCE0117K
NCE0117K
TO-252-2L
Reel Size -
Tape width -
Quantity -
Absolute Maximum Ratings (TC=25℃unless otherwise noted)
Parameter
Symbol
Drain-Source Voltage
VDS
Gate-Source Voltage
VGS
Drain Current-Continuous
ID
Drain Current-Continuous(TC=100℃)
ID (100℃)
Pulsed Drain Current Maximum Power Dissipation Single pulse avalanche energy (Note 5)
IDM PD
EAS
Operating Junction and Storage Temperature Range
TJ,TSTG
Limit
100 ±20 17 12 60 55 250 -55 To 150
Unit
V V A A A W mJ ℃
Wuxi NCE Power Semiconductor Co., Ltd
Page 1
v1.0
http://www.ncepower.com
Pb Free Product
NCE0117K
Thermal Characteristic
Thermal Resistance,...
Similar Datasheet