N-Channel Enhancement Mode Power MOSFET
http://www.ncepower.com
Pb Free Product
NCE0140IA
NCE N-Channel Enhancement Mode Power MOSFET
Description
The NCE0140I...
Description
http://www.ncepower.com
Pb Free Product
NCE0140IA
NCE N-Channel Enhancement Mode Power MOSFET
Description
The NCE0140IA uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. It can be used in a wide variety of applications.
General Features
● VDS = 100V,ID =40A RDS(ON) < 17mΩ @ VGS=10V
(Typ:14mΩ)
● Special process technology for high ESD capability ● High density cell design for ultra low Rdson ● Fully characterized avalanche voltage and current ● Good stability and uniformity with high EAS ● Excellent package for good heat dissipation
Schematic diagram
Application
● Power switching application ● Hard switched and high frequency circuits ● Uninterruptible power supply
Marking and pin assignment
100% UIS TESTED! 100% ∆Vds TESTED!
TO-251 top view
Package Marking and Ordering Information
Device Marking
Device
Device Package
NCE0140IA
NCE0140IA
TO-251
Reel Size -
Tape width -
Quantity -
Absolute Maximum Ratings (TC=25℃unless otherwise noted)
Parameter
Symbol
Drain-Source Voltage
VDS
Gate-Source Voltage
VGS
Drain Current-Continuous
ID
Drain Current-Continuous(TC=100℃)
ID (100℃)
Pulsed Drain Current Maximum Power Dissipation Derating factor
IDM PD -
Single pulse avalanche energy (Note 5)
EAS
Operating Junction and Storage Temperature Range
TJ,TSTG
Limit
100 ±20 40 28 160 140 0.94 520 -55 To 175
Unit
V V A A A W W/℃ mJ ℃
Wuxi NCE Power Semiconductor Co., Ltd
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