NCE85H35TC

http://www.ncepower.com Pb Free Product NCE85H35TC NCE N-Channel Enhancement Mode Power MOSFET Description The NCE85H35TC uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. It can be used in automotive applications and a wide variety of other applications. General Features ● VDSS =85V,ID =350A RDS(ON) < 2.4mΩ @ VGS=10V （Typ：1.8 mΩ） ● Good stability and uniformity with high EAS ● Special process technology for high ESD capability ● High density cell design for ultra low Rdson ● Fully characterized avalanche voltage and current ● Excellent package for good heat dissipation Schematic diagram Application ● Automotive applications ● Hard switched and high frequency circuits ● Uninterruptible power supply 100% UIS TESTED! 100% ∆Vds TESTED! Marking and pin assignment TO-247 top view Package Marking and Ordering Information Device Marking Device Device Package NCE85H35TC NCE85H35TC TO-247 Reel Size - Tape width - Quantity - Absolute Maximum Ratings (TC=25℃unless otherwise noted) Parameter Symbol Drain-Source Voltage VDSS Gate-Source Voltage VGS Drain Current-Continuous ID Drain Current-Continuous(TC=100℃) ID (100℃) Pulsed Drain Current Maximum Power Dissipation IDM PD Derating factor Single pulse avalanche energy (Note 3) EAS Operating Junction and Storage Temperature Range TJ,TSTG Limit 85 ±20 350 247 1280 460 3.07 3500 -55 To 175 Unit V V A A A W W/℃ mJ ℃ Wuxi NCE Power Semiconductor Co., Ltd Page 1 ...