BTP955E3

CYStech Electronics Corp. Spec. No. : C811E3 Issued Date : 2015.06.08 Revised Date : 2019.09.24 Page No. : 1/5 PNP Epitaxial Planar High Current (High Performance) Transistor BTP955E3 BVCEO IC RCE(SAT) -140V -5A 90mΩ typ. Features  5 Amps continuous current, up to 10 Amps peak current  Very low saturation voltage  Excellent gain characteristics specified up to 3 Amps  Extremely low equivalent on resistance, RCE(SAT)=90mΩ at 3A  RoHS compliant package Symbol BTP955E3 Outline TO-220 B：Base C：Collector E：Emitter BCE Ordering Information Device BTP955E3-0-UB-G Package TO-220 (Pb-free lead plating) Shipping 50 pcs / tube, 20 tubes/ box , 4 boxes/carton Environment friendly grade : S for RoHS compliant products, G for RoHS compliant and green compound products Packing spec, UB : 50 pcs / tube, 20 tubes/box Product rank, zero for no rank products Product name BTP955E3 CYStek Product Specification CYStech Electronics Corp. Spec. No. : C811E3 Issued Date : 2015.06.08 Revised Date : 2019.09.24 Page No. : 2/5 Absolute Maximum Ratings (Ta=25C) Parameter Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Continuous Collector Current Peak Collector Current Base Current Power Dissipation @TA=25C Power Dissipation @TC=25C Operating and Storage Temperature Range Note: 1.Single pulse, Pw≤10ms Symbol VCBO VCEO VEBO IC ICP IB PD Tj ; Tstg Limits -180 -140 -6 -5 -10 (Note 1) -1 2 31 -55 ~ +150 Unit V A W C Thermal Characteristics Parameter Ther...