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CEP5175 Dataheets PDF



Part Number CEP5175
Manufacturers CET
Logo CET
Description P-Channel MOSFET
Datasheet CEP5175 DatasheetCEP5175 Datasheet (PDF)

CEP5175/CEB5175 P-Channel Enhancement Mode Field Effect Transistor PRELIMINARY FEATURES -55V, -50A, RDS(ON) = 23mΩ @VGS = 10V. RDS(ON) = 28mΩ @VGS = 4.5V. Super high dense cell design for extremely low RDS(ON). High power and current handing capability. Lead-free plating ; RoHS compliant. TO-220 & TO-263 package. D G S CEB SERIES TO-263(DD-PAK) G D S CEP SERIES TO-220 G D S ABSOLUTE MAXIMUM RATINGS Tc = 25 C unless otherwise noted Parameter Symbol Limit Drain-Source Voltage Gate-So.

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CEP5175/CEB5175 P-Channel Enhancement Mode Field Effect Transistor PRELIMINARY FEATURES -55V, -50A, RDS(ON) = 23mΩ @VGS = 10V. RDS(ON) = 28mΩ @VGS = 4.5V. Super high dense cell design for extremely low RDS(ON). High power and current handing capability. Lead-free plating ; RoHS compliant. TO-220 & TO-263 package. D G S CEB SERIES TO-263(DD-PAK) G D S CEP SERIES TO-220 G D S ABSOLUTE MAXIMUM RATINGS Tc = 25 C unless otherwise noted Parameter Symbol Limit Drain-Source Voltage Gate-Source Voltage VDS -55 VGS ±20 Drain Current-Continuous @ TC = 25 C @ TC = 100 C ID -50 -32 Drain Current-Pulsed a IDM -200 Maximum Power Dissipation @ TC = 25 C - Derate above 25 C PD 96 0.77 Operating and Store Temperature Range TJ,Tstg -55 to 150 Units V V A A A W W/ C C Thermal Characteristics Parameter Thermal Resistance, Junction-to-Case Thermal Resistance, Junction-to-Ambient Symbol RθJC RθJA This is preliminary information on a new product in development now . Details are subject to change without notice . 1 Limit 1.3 62.5 Units C/W C/W Rev 1. 2014.Apr http://www.cetsemi.com CEP5175/CEB5175 Electrical Characteristics Tc = 25 C unless otherwise noted Parameter Symbol Test Condition Off Characteristics Drain-Source Breakdown Voltage Zero Gate Voltage Drain Current Gate Body Leakage Current, Forward Gate Body Leakage Current, Reverse On Characteristics b BVDSS IDSS IGSSF IGSSR VGS = 0V, ID = -250µA VDS = -55V, VGS = 0V VGS = 20V, VDS = 0V VGS = -20V, VDS = 0V Gate Threshold Voltage Static Drain-Source On-Resistance Dynamic Characteristics c VGS(th) RDS(on) VGS = VDS, ID = -250µA VGS = -10V, ID = -20A VGS = -4.5V, ID = -10A Input Capacitance Output Capacitance Reverse Transfer Capacitance Switching Characteristics c Ciss Coss Crss VDS = -25V, VGS = 0V, f = 1.0 MHz Turn-On Delay Time Turn-On Rise Time Turn-Off Delay Time td(on) tr td(off) VDD = -45V, ID = -20A, VGS = -10V, RGEN = 6Ω Turn-Off Fall Time tf Total Gate Charge Gate-Source Charge Gate-Drain Charge Qg Qgs VDS = -45V, ID = -20A, VGS = -4.5V Qgd Drain-Source Diode Characteristics and Maximun Ratings Drain-Source Diode Forward Current Drain-Source Diode Forward Voltage b IS VSD VGS = 0V, IS = -20A Notes : a.Repetitive Rating : Pulse width limited by maximum junction temperature. b.Pulse Test : Pulse Width < 300µs, Duty Cycle < 2%. c.Guaranteed by design, not subject to production testing. Min -55 -1 Typ Max Units -1 100 -100 V µA nA nA -3 V 18 23 mΩ 20 28 mΩ 3435 315 155 pF pF pF 18 ns 10 ns 175 ns 60 ns 35 nC 12 nC 16 nC -50 A -1.2 V 2 -ID, Drain Current (A) C, Capacitance (pF) 50 -VGS=10,8,6,4V 40 CEP5175/CEB5175 75 60 -ID, Drain Current (A) 30 -VGS=3V 20 10 0 0 1.5 3 4.5 6 7.5 9 -VDS, Drain-to-Source Voltage (V) Figure 1. Output Characteristics 45 30 25 C 15 TJ=125 C -55 C 0 0 0.8 1.6 2.4 3.2 4 4.8 -VGS, Gate-to-Source Voltage (V) Figure 2. Transfer Characteristics 3600 3000 Ciss 2400 1800 1200 600 Coss 0 Crss 0 5 10 15 20 25 -VDS, Drain-to-Source Voltage (V) Figure 3. Capacitance 1.3 VDS=VGS 1.2 ID=-250µA 1.1 1.0 0.9 0.8 0.7 0.6 -50 -25 0 25 50 75 100 125 150 TJ, Junction Temperature( C) Figure 5. Gate Threshold Variation with Temperature RDS(ON), Normalized RDS(ON), On-Resistance(Ohms) -IS, Source-drain current (A) 2.2 ID=-20A 1.9 VGS=-10V 1.6 1.3 1.0 0.7 0.4 -100 -50 0 50 100 150 200 TJ, Junction Temperature( C) Figure 4. On-Resistance Variation with Temperature 103 VGS=0V 102 101 100 0.3 0.6 0.9 1.2 1.5 1.8 -VSD, Body Diode Forward Voltage (V) Figure 6. Body Diode Forward Voltage Variation with Source Current VTH, Normalized Gate-Source Threshold Voltage 3 VGS, Gate to Source Voltage (V) ID, Drain Current (A) 10 VDS=-45V ID=-20A 8 6 4 2 0 0 20 40 60 80 Qg, Total Gate Charge (nC) Figure 7. Gate Charge VDD VIN RL D VOUT VGS RGEN G S CEP5175/CEB5175 103 102 100µs 1ms 101 10ms DC 100 10-1 10-1 100 101 102 VDS, Drain-Source Voltage (V) Figure 8. Maximum Safe Operating Area td(on) VOUT t on tr td(off) 90% 10% INVERTED toff tf 90% 10% VIN 10% 50% 90% 50% PULSE WIDTH Figure 9. Switching Test Circuit Figure 10. Switching Waveforms r(t),Normalized Effective Transient Thermal Impedance 100 D=0.5 0.2 10-1 0.1 0.05 0.02 0.01 Single Pulse 10-2 10-5 10-4 10-3 10-2 10-1 PDM t1 t2 1. R JC (t)=r (t) * R JC 2. R JC=See Datasheet 3. TJM-TC = P* R JC (t) 4. Duty Cycle, D=t1/t2 100 101 Square Wave Pulse Duration (sec) Figure 11. Normalized Thermal Transient Impedance Curve 4 .


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