Document
CEP5175/CEB5175
P-Channel Enhancement Mode Field Effect Transistor
PRELIMINARY
FEATURES
-55V, -50A, RDS(ON) = 23mΩ @VGS = 10V. RDS(ON) = 28mΩ @VGS = 4.5V.
Super high dense cell design for extremely low RDS(ON).
High power and current handing capability.
Lead-free plating ; RoHS compliant.
TO-220 & TO-263 package.
D
G S
CEB SERIES TO-263(DD-PAK)
G D S
CEP SERIES TO-220
G
D S
ABSOLUTE MAXIMUM RATINGS Tc = 25 C unless otherwise noted
Parameter
Symbol
Limit
Drain-Source Voltage Gate-Source Voltage
VDS -55
VGS ±20
Drain Current-Continuous @ TC = 25 C @ TC = 100 C
ID
-50 -32
Drain Current-Pulsed a
IDM -200
Maximum Power Dissipation @ TC = 25 C - Derate above 25 C
PD
96 0.77
Operating and Store Temperature Range
TJ,Tstg
-55 to 150
Units V V A A A W
W/ C
C
Thermal Characteristics
Parameter Thermal Resistance, Junction-to-Case Thermal Resistance, Junction-to-Ambient
Symbol RθJC RθJA
This is preliminary information on a new product in development now . Details are subject to change without notice .
1
Limit 1.3 62.5
Units C/W C/W
Rev 1. 2014.Apr http://www.cetsemi.com
CEP5175/CEB5175
Electrical Characteristics Tc = 25 C unless otherwise noted
Parameter
Symbol
Test Condition
Off Characteristics
Drain-Source Breakdown Voltage Zero Gate Voltage Drain Current Gate Body Leakage Current, Forward Gate Body Leakage Current, Reverse On Characteristics b
BVDSS IDSS IGSSF IGSSR
VGS = 0V, ID = -250µA VDS = -55V, VGS = 0V VGS = 20V, VDS = 0V VGS = -20V, VDS = 0V
Gate Threshold Voltage Static Drain-Source On-Resistance Dynamic Characteristics c
VGS(th) RDS(on)
VGS = VDS, ID = -250µA VGS = -10V, ID = -20A VGS = -4.5V, ID = -10A
Input Capacitance Output Capacitance Reverse Transfer Capacitance Switching Characteristics c
Ciss Coss Crss
VDS = -25V, VGS = 0V, f = 1.0 MHz
Turn-On Delay Time Turn-On Rise Time Turn-Off Delay Time
td(on) tr
td(off)
VDD = -45V, ID = -20A, VGS = -10V, RGEN = 6Ω
Turn-Off Fall Time
tf
Total Gate Charge Gate-Source Charge Gate-Drain Charge
Qg Qgs
VDS = -45V, ID = -20A, VGS = -4.5V
Qgd
Drain-Source Diode Characteristics and Maximun Ratings
Drain-Source Diode Forward Current Drain-Source Diode Forward Voltage b
IS VSD
VGS = 0V, IS = -20A
Notes : a.Repetitive Rating : Pulse width limited by maximum junction temperature. b.Pulse Test : Pulse Width < 300µs, Duty Cycle < 2%. c.Guaranteed by design, not subject to production testing.
Min -55
-1
Typ Max Units
-1 100 -100
V µA nA nA
-3 V 18 23 mΩ 20 28 mΩ
3435 315 155
pF pF pF
18 ns 10 ns 175 ns 60 ns 35 nC 12 nC 16 nC
-50 A -1.2 V
2
-ID, Drain Current (A)
C, Capacitance (pF)
50 -VGS=10,8,6,4V
40
CEP5175/CEB5175
75
60
-ID, Drain Current (A)
30 -VGS=3V 20
10
0 0 1.5 3 4.5 6 7.5 9
-VDS, Drain-to-Source Voltage (V) Figure 1. Output Characteristics
45
30 25 C
15 TJ=125 C
-55 C
0 0 0.8 1.6 2.4 3.2
4 4.8
-VGS, Gate-to-Source Voltage (V)
Figure 2. Transfer Characteristics
3600 3000
Ciss
2400
1800
1200
600 Coss 0 Crss 0 5 10 15 20 25
-VDS, Drain-to-Source Voltage (V)
Figure 3. Capacitance
1.3 VDS=VGS 1.2 ID=-250µA
1.1
1.0
0.9
0.8
0.7
0.6 -50 -25 0 25 50 75 100 125 150
TJ, Junction Temperature( C)
Figure 5. Gate Threshold Variation with Temperature
RDS(ON), Normalized RDS(ON), On-Resistance(Ohms)
-IS, Source-drain current (A)
2.2 ID=-20A 1.9 VGS=-10V 1.6 1.3 1.0 0.7 0.4
-100 -50 0 50 100 150 200
TJ, Junction Temperature( C) Figure 4. On-Resistance Variation
with Temperature
103 VGS=0V
102
101
100 0.3 0.6 0.9 1.2 1.5 1.8
-VSD, Body Diode Forward Voltage (V) Figure 6. Body Diode Forward Voltage
Variation with Source Current
VTH, Normalized Gate-Source Threshold Voltage
3
VGS, Gate to Source Voltage (V) ID, Drain Current (A)
10 VDS=-45V ID=-20A
8
6
4
2
0 0 20 40 60 80
Qg, Total Gate Charge (nC) Figure 7. Gate Charge
VDD
VIN RL D VOUT
VGS RGEN G
S
CEP5175/CEB5175
103
102 100µs
1ms
101
10ms DC
100
10-1
10-1
100
101
102
VDS, Drain-Source Voltage (V)
Figure 8. Maximum Safe Operating Area
td(on) VOUT
t on tr
td(off)
90%
10% INVERTED
toff tf
90%
10%
VIN
10%
50%
90% 50%
PULSE WIDTH
Figure 9. Switching Test Circuit
Figure 10. Switching Waveforms
r(t),Normalized Effective Transient Thermal Impedance
100 D=0.5
0.2
10-1
0.1
0.05
0.02 0.01 Single Pulse
10-2 10-5
10-4
10-3
10-2
10-1
PDM
t1 t2
1. R JC (t)=r (t) * R JC 2. R JC=See Datasheet 3. TJM-TC = P* R JC (t) 4. Duty Cycle, D=t1/t2
100
101
Square Wave Pulse Duration (sec)
Figure 11. Normalized Thermal Transient Impedance Curve
4
.