Document
CEP6036/CEB6036
N-Channel Enhancement Mode Field Effect Transistor
PRELIMINARY
FEATURES
60V, 135A, RDS(ON) = 4.6mΩ @VGS = 10V. Super high dense cell design for extremely low RDS(ON). High power and current handing capability. Lead-free plating ; RoHS compliant. TO-220 & TO-263 package.
D
D
G S
CEB SERIES TO-263(DD-PAK)
G D S
CEP SERIES TO-220
G
S
ABSOLUTE MAXIMUM RATINGS Tc = 25 C unless otherwise noted
Parameter
Symbol
Limit
Drain-Source Voltage Gate-Source Voltage
VDS 60
VGS ±20
Drain Current-Continuous @ TC = 25 C @ TC = 100 C
ID
135 95
Drain Current-Pulsed a
IDM 540
Maximum Power Dissipation @ TC = 25 C - Derate above 25 C
PD
167 1.1
Single Pulsed Avalanche Energy d Single Pulsed Avalanche Current d Operating and Store Temperature Range
EAS IAS TJ,Tstg
400 40 -55 to 175
Units V V A A A W
W/ C mJ A
C
Thermal Characteristics
Parameter Thermal Resistance, Junction-to-Case Thermal Resistance, Junction-to-Ambient
Symbol RθJC RθJA
Limit 0.9 62.5
Units C/W C/W
This is preliminary information on a new product in development now . Details are subject to change without notice .
1
Rev 1. 2012.Jun http://www.cetsemi.com
CEP6036/CEB6036
Electrical Characteristics Tc = 25 C unless otherwise noted
Parameter
Symbol
Test Condition
Off Characteristics
Drain-Source Breakdown Voltage Zero Gate Voltage Drain Current Gate Body Leakage Current, Forward Gate Body Leakage Current, Reverse On Characteristics b
BVDSS IDSS IGSSF IGSSR
VGS = 0V, ID = 250µA VDS = 60V, VGS = 0V VGS = 20V, VDS = 0V VGS = -20V, VDS = 0V
Gate Threshold Voltage Static Drain-Source On-Resistance
VGS(th) RDS(on)
VGS = VDS, ID = 250µA VGS = 10V, ID = 30A
Gate input resistance Dynamic Characteristics c
Rg f=1MHz,open Drain
Input Capacitance Output Capacitance Reverse Transfer Capacitance Switching Characteristics c
Ciss Coss Crss
VDS = 25V, VGS = 0V, f = 1.0 MHz
Turn-On Delay Time Turn-On Rise Time Turn-Off Delay Time
td(on) tr
td(off)
VDD = 30V, ID = 30A, VGS = 10V, RGEN = 3.6Ω
Turn-Off Fall Time
tf
Total Gate Charge Gate-Source Charge Gate-Drain Charge
Qg Qgs
VDS = 48V, ID = 30A, VGS = 10V
Qgd
Drain-Source Diode Characteristics and Maximun Ratings
Drain-Source Diode Forward Current Drain-Source Diode Forward Voltage b
IS VSD
VGS = 0V, IS = 30A
Notes : a.Repetitive Rating : Pulse width limited by maximum junction temperature b.Pulse Test : Pulse Width < 300µs, Duty Cycle < 2%. c.Guaranteed by design, not subject to production testing. d.L = 0.5mH, IAS =40A, VDD = 24V, RG = 25Ω, Starting TJ = 25 C
Min 60
2
Typ
3.7 1.9 6145 450 300 34 23 82 25 138 34 46
Max Units
1 100 -100
V µA nA nA
4V 4.6 mΩ
Ω
pF pF pF
68 ns 46 ns 164 ns 50 ns 179 nC
nC nC
135 A 1.2 V
2
ID, Drain Current (A)
C, Capacitance (pF)
180 VGS=10,9,8,7V
150
120 VGS=6V
90
60
30 VGS=5V 0 0 2 4 6 8 10
VDS, Drain-to-Source Voltage (V)
Figure 1. Output Characteristics
7200 6000
Ciss
4800
3600
2400
1200
Coss
0 Crss 0 5 10 15 20 25
VDS, Drain-to-Source Voltage (V)
Figure 3. Capacitance
1.3 VDS=VGS 1.2 ID=250µA
1.1
1.0
0.9
0.8
0.7
0.6 -50 -25 0 25 50 75 100 125 150 175
TJ, Junction Temperature( C)
Figure 5. Gate Threshold Variation with Temperature
CEP6036/CEB6036
200 25 C
150
ID, Drain Current (A)
100
RDS(ON), Normalized RDS(ON), On-Resistance(Ohms)
50 TJ=125 C
-55 C
0 0 2 4 6 8 10
VGS, Gate-to-Source Voltage (V)
Figure 2. Transfer Characteristics
2.6 ID=30A 2.2 VGS=10V
1.8
1.4
1.0
0.6
0.2 -100 -50 0 50 100 150 200
TJ, Junction Temperature( C) Figure 4. On-Resistance Variation
with Temperature
VGS=0V
101
IS, Source-drain current (A)
100
10-1 0.4 0.6 0.8 1.0 1.2 1.4
VSD, Body Diode Forward Voltage (V)
Figure 6. Body Diode Forward Voltage Variation with Source Current
VTH, Normalized Gate-Source Threshold Voltage
3
VGS, Gate to Source Voltage (V) ID, Drain Current (A)
10 VDS=48V ID=30A
8
6
4
2
0 0 35 70 105 140
Qg, Total Gate Charge (nC) Figure 7. Gate Charge
VDD
VIN RL D VOUT
VGS RGEN G
S
CEP6036/CEB6036
103 RDS(ON)Limit
100ms 102 1ms
10ms DC
101
TC=25 C
TJ=175 C
100 Single Pulse
10-1
100
101
102
VDS, Drain-Source Voltage (V)
Figure 8. Maximum Safe Operating Area
td(on) VOUT
t on tr
td(off)
90%
10% INVERTED
toff tf
90%
10%
VIN
10%
50%
90% 50%
PULSE WIDTH
Figure 9. Switching Test Circuit
Figure 10. Switching Waveforms
r(t),Normalized Effective Transient Thermal Impedance
100 D=0.5
0.2
10-1
0.1
0.05
0.02 0.01 Single Pulse
10-2 10-5
10-4
10-3
10-2
10-1
PDM
t1 t2
1. R JC (t)=r (t) * R JC 2. R JC=See Datasheet 3. TJM-TC = P* R JC (t) 4. Duty Cycle, D=t1/t2
100
101
Square Wave Pulse Duration (sec)
Figure 11. Normalized Thermal Transient Impedance Curve
4
.