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CEB6036 Dataheets PDF



Part Number CEB6036
Manufacturers Chino-Excel Technology
Logo Chino-Excel Technology
Description N-Channel MOSFET
Datasheet CEB6036 DatasheetCEB6036 Datasheet (PDF)

CEP6036/CEB6036 N-Channel Enhancement Mode Field Effect Transistor PRELIMINARY FEATURES 60V, 135A, RDS(ON) = 4.6mΩ @VGS = 10V. Super high dense cell design for extremely low RDS(ON). High power and current handing capability. Lead-free plating ; RoHS compliant. TO-220 & TO-263 package. D D G S CEB SERIES TO-263(DD-PAK) G D S CEP SERIES TO-220 G S ABSOLUTE MAXIMUM RATINGS Tc = 25 C unless otherwise noted Parameter Symbol Limit Drain-Source Voltage Gate-Source Voltage VDS 60 VGS ±20 .

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CEP6036/CEB6036 N-Channel Enhancement Mode Field Effect Transistor PRELIMINARY FEATURES 60V, 135A, RDS(ON) = 4.6mΩ @VGS = 10V. Super high dense cell design for extremely low RDS(ON). High power and current handing capability. Lead-free plating ; RoHS compliant. TO-220 & TO-263 package. D D G S CEB SERIES TO-263(DD-PAK) G D S CEP SERIES TO-220 G S ABSOLUTE MAXIMUM RATINGS Tc = 25 C unless otherwise noted Parameter Symbol Limit Drain-Source Voltage Gate-Source Voltage VDS 60 VGS ±20 Drain Current-Continuous @ TC = 25 C @ TC = 100 C ID 135 95 Drain Current-Pulsed a IDM 540 Maximum Power Dissipation @ TC = 25 C - Derate above 25 C PD 167 1.1 Single Pulsed Avalanche Energy d Single Pulsed Avalanche Current d Operating and Store Temperature Range EAS IAS TJ,Tstg 400 40 -55 to 175 Units V V A A A W W/ C mJ A C Thermal Characteristics Parameter Thermal Resistance, Junction-to-Case Thermal Resistance, Junction-to-Ambient Symbol RθJC RθJA Limit 0.9 62.5 Units C/W C/W This is preliminary information on a new product in development now . Details are subject to change without notice . 1 Rev 1. 2012.Jun http://www.cetsemi.com CEP6036/CEB6036 Electrical Characteristics Tc = 25 C unless otherwise noted Parameter Symbol Test Condition Off Characteristics Drain-Source Breakdown Voltage Zero Gate Voltage Drain Current Gate Body Leakage Current, Forward Gate Body Leakage Current, Reverse On Characteristics b BVDSS IDSS IGSSF IGSSR VGS = 0V, ID = 250µA VDS = 60V, VGS = 0V VGS = 20V, VDS = 0V VGS = -20V, VDS = 0V Gate Threshold Voltage Static Drain-Source On-Resistance VGS(th) RDS(on) VGS = VDS, ID = 250µA VGS = 10V, ID = 30A Gate input resistance Dynamic Characteristics c Rg f=1MHz,open Drain Input Capacitance Output Capacitance Reverse Transfer Capacitance Switching Characteristics c Ciss Coss Crss VDS = 25V, VGS = 0V, f = 1.0 MHz Turn-On Delay Time Turn-On Rise Time Turn-Off Delay Time td(on) tr td(off) VDD = 30V, ID = 30A, VGS = 10V, RGEN = 3.6Ω Turn-Off Fall Time tf Total Gate Charge Gate-Source Charge Gate-Drain Charge Qg Qgs VDS = 48V, ID = 30A, VGS = 10V Qgd Drain-Source Diode Characteristics and Maximun Ratings Drain-Source Diode Forward Current Drain-Source Diode Forward Voltage b IS VSD VGS = 0V, IS = 30A Notes : a.Repetitive Rating : Pulse width limited by maximum junction temperature b.Pulse Test : Pulse Width < 300µs, Duty Cycle < 2%. c.Guaranteed by design, not subject to production testing. d.L = 0.5mH, IAS =40A, VDD = 24V, RG = 25Ω, Starting TJ = 25 C Min 60 2 Typ 3.7 1.9 6145 450 300 34 23 82 25 138 34 46 Max Units 1 100 -100 V µA nA nA 4V 4.6 mΩ Ω pF pF pF 68 ns 46 ns 164 ns 50 ns 179 nC nC nC 135 A 1.2 V 2 ID, Drain Current (A) C, Capacitance (pF) 180 VGS=10,9,8,7V 150 120 VGS=6V 90 60 30 VGS=5V 0 0 2 4 6 8 10 VDS, Drain-to-Source Voltage (V) Figure 1. Output Characteristics 7200 6000 Ciss 4800 3600 2400 1200 Coss 0 Crss 0 5 10 15 20 25 VDS, Drain-to-Source Voltage (V) Figure 3. Capacitance 1.3 VDS=VGS 1.2 ID=250µA 1.1 1.0 0.9 0.8 0.7 0.6 -50 -25 0 25 50 75 100 125 150 175 TJ, Junction Temperature( C) Figure 5. Gate Threshold Variation with Temperature CEP6036/CEB6036 200 25 C 150 ID, Drain Current (A) 100 RDS(ON), Normalized RDS(ON), On-Resistance(Ohms) 50 TJ=125 C -55 C 0 0 2 4 6 8 10 VGS, Gate-to-Source Voltage (V) Figure 2. Transfer Characteristics 2.6 ID=30A 2.2 VGS=10V 1.8 1.4 1.0 0.6 0.2 -100 -50 0 50 100 150 200 TJ, Junction Temperature( C) Figure 4. On-Resistance Variation with Temperature VGS=0V 101 IS, Source-drain current (A) 100 10-1 0.4 0.6 0.8 1.0 1.2 1.4 VSD, Body Diode Forward Voltage (V) Figure 6. Body Diode Forward Voltage Variation with Source Current VTH, Normalized Gate-Source Threshold Voltage 3 VGS, Gate to Source Voltage (V) ID, Drain Current (A) 10 VDS=48V ID=30A 8 6 4 2 0 0 35 70 105 140 Qg, Total Gate Charge (nC) Figure 7. Gate Charge VDD VIN RL D VOUT VGS RGEN G S CEP6036/CEB6036 103 RDS(ON)Limit 100ms 102 1ms 10ms DC 101 TC=25 C TJ=175 C 100 Single Pulse 10-1 100 101 102 VDS, Drain-Source Voltage (V) Figure 8. Maximum Safe Operating Area td(on) VOUT t on tr td(off) 90% 10% INVERTED toff tf 90% 10% VIN 10% 50% 90% 50% PULSE WIDTH Figure 9. Switching Test Circuit Figure 10. Switching Waveforms r(t),Normalized Effective Transient Thermal Impedance 100 D=0.5 0.2 10-1 0.1 0.05 0.02 0.01 Single Pulse 10-2 10-5 10-4 10-3 10-2 10-1 PDM t1 t2 1. R JC (t)=r (t) * R JC 2. R JC=See Datasheet 3. TJM-TC = P* R JC (t) 4. Duty Cycle, D=t1/t2 100 101 Square Wave Pulse Duration (sec) Figure 11. Normalized Thermal Transient Impedance Curve 4 .


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