CEP6042/CEB6042
N-Channel Enhancement Mode Field Effect Transistor
PRELIMINARY
FEATURES
60V, 118A, RDS(ON) = 5mΩ @VGS...
CEP6042/CEB6042
N-Channel Enhancement Mode Field Effect
Transistor
PRELIMINARY
FEATURES
60V, 118A, RDS(ON) = 5mΩ @VGS = 10V. Super high dense cell design for extremely low RDS(ON). High power and current handing capability. Lead-free plating ; RoHS compliant. TO-220 & TO-263 package.
D
D
G S
CEB SERIES TO-263(DD-PAK)
G D S
CEP SERIES TO-220
G
S
ABSOLUTE MAXIMUM RATINGS Tc = 25 C unless otherwise noted
Parameter
Symbol
Limit
Drain-Source Voltage Gate-Source Voltage
VDS 60
VGS ±20
Drain Current-Continuous @ TC = 25 C @ TC = 100 C
Drain Current-Pulsed a Maximum Power Dissipation @ TC = 25 C
- Derate above 25 C
ID IDM PD
118 75 472 139
1.1
Single Pulsed Avalanche Energy d
EAS 400
Single Pulsed Avalanche Current d
IAS 40
Operating and Store Temperature Range
TJ,Tstg
-55 to 150
Units V V A A A W
W/ C mJ A
C
Thermal Characteristics
Parameter Thermal Resistance, Junction-to-Case Thermal Resistance, Junction-to-Ambient
Symbol RθJC RθJA
Limit 0.9 62.5
Units C/W C/W
This is preliminary information on a new product in development now . Details are subject to change without notice .
1
Rev 1. 2012.Sep http://www.cetsemi.com
CEP6042/CEB6042
Electrical Characteristics Tc = 25 C unless otherwise noted
Parameter
Symbol
Test Condition
Off Characteristics
Drain-Source Breakdown Voltage Zero Gate Voltage Drain Current Gate Body Leakage Current, Forward Gate Body Leakage Current, Reverse On Characteristics b
BVDSS IDSS IGSSF IGSSR
VGS = 0V, ID = 250µA VDS = ...