CED840A

CED840A/CEU840A N-Channel Enhancement Mode Field Effect Transistor PRELIMINARY FEATURES 500V, 7.5A, RDS(ON) = 0.85Ω @VGS = 10V. Super high dense cell design for extremely low RDS(ON). High power and current handing capability. Lead free product is acquired. TO-251 & TO-252 package. D D G S CEU SERIES TO-252(D-PAK) G DS CED SERIES TO-251(I-PAK) G S ABSOLUTE MAXIMUM RATINGS Tc = 25 C unless otherwise noted Parameter Symbol Limit Drain-Source Voltage Gate-Source Voltage VDS 500 VGS ±30 Drain Current-Continuous @ TC = 25 C @ TC = 100 C ID 7.5 4.7 Drain Current-Pulsed a IDM 30 Maximum Power Dissipation @ TC = 25 C - Derate above 25 C PD 107 0.85 Single Pulsed Avalanche Energy e Single Pulsed Avalanche Current e Operating and Store Temperature Range EAS IAS TJ,Tstg 196 7.5 -55 to 150 Thermal Characteristics Parameter Thermal Resistance, Junction-to-Case Thermal Resistance, Junction-to-Ambient Symbol RθJC RθJA Limit 1.4 50 Units V V A A A W W/ C mJ A C Units C/W C/W This is preliminary information on a new product in development now . Details are subject to change without notice . 1 Rev 1. 2011.July http://www.cetsemi.com CED840A/CEU840A Electrical Characteristics Tc = 25 C unless otherwise noted Parameter Symbol Test Condition Off Characteristics Drain-Source Breakdown Voltage Zero Gate Voltage Drain Current Gate Body Leakage Current, Forward Gate Body Leakage Current, Reverse On Characteristics b BVDSS IDSS IGSSF IGSSR VGS = 0V, ID = 250µA V...