CEF80N15

CEP80N15/CEB80N15 CEF80N15 N-Channel Enhancement Mode Field Effect Transistor PRELIMINARY FEATURES Type CEP80N15 CEB80N15 CEF80N15 VDSS 150V 150V 150V RDS(ON) 19mΩ 19mΩ 19mΩ ID 76A 76A 76A d @VGS 10V 10V 10V Super high dense cell design for extremely low RDS(ON). High power and current handing capability. Lead-free plating ; RoHS compliant. TO-220 & TO-263 & TO-220F full-pak for through hole. D DG G S CEB SERIES TO-263(DD-PAK) G D S CEP SERIES TO-220 G D S CEF SERIES TO-220F S ABSOLUTE MAXIMUM RATINGS Tc = 25 C unless otherwise noted Parameter Symbol Limit TO-220/263 TO-220F Drain-Source Voltage Gate-Source Voltage Drain Current-Continuous @ TC = 25 C @ TC = 100 C Drain Current-Pulsed a Maximum Power Dissipation @ TC = 25 C - Derate above 25 C VDS VGS ID IDM e PD 150 ±20 76 55 304 300 2 76 d 55 d 304 d 68 0.5 Operating and Store Temperature Range TJ,Tstg -55 to 175 Thermal Characteristics Parameter Thermal Resistance, Junction-to-Case Thermal Resistance, Junction-to-Ambient Symbol RθJC RθJA Limit 0.5 62.5 2.2 65 Units V V A A A W W/ C C Units C/W C/W This is preliminary information on a new product in development now . Details are subject to change without notice . 1 Rev 1. 2012.Mar. http://www.cetsemi.com CEP80N15/CEB80N15 CEF80N15 Electrical Characteristics Tc = 25 C unless otherwise noted Parameter Symbol Test Condition Min Typ Max Units Off Characteristics Drain-Source Breakdown Voltage Zero Gate Voltage Drain Current Gate Body ...