Document
CED02N65A/CEU02N65A
N-Channel Enhancement Mode Field Effect Transistor
PRELIMINARY
FEATURES
650V, 1.2A, RDS(ON) = 10.5Ω @VGS = 10V. Super high dense cell design for extremely low RDS(ON). High power and current handing capability. Lead free product is acquired. TO-251 & TO-252 package.
D
D
G S
CEU SERIES TO-252(D-PAK)
G DS
CED SERIES TO-251(I-PAK)
G
S
ABSOLUTE MAXIMUM RATINGS Tc = 25 C unless otherwise noted
Parameter
Symbol
Limit
Drain-Source Voltage
Gate-Source Voltage Drain Current-Continuous @ TC = 25 C
@ TC = 100 C Drain Current-Pulsed a
Maximum Power Dissipation @ TC = 25 C - Derate above 25 C
VDS VGS ID
IDM PD
650
±30
1.2
0.8 4.8 35.7 0.29
Operating and Store Temperature Range
TJ,Tstg
-55 to 150
Thermal Characteristics
Parameter Thermal Resistance, Junction-to-Case Thermal Resistance, Junction-to-Ambient
Symbol RθJC RθJA
Limit 3.5 50
Units V V A A A W
W/ C C
Units C/W C/W
This is preliminary information on a new product in development now . Details are subject to change without notice .
1
Rev 1. 2011.Oct http://www.cetsemi.com
CED02N65A/CEU02N65A
Electrical Characteristics Tc = 25 C unless otherwise noted
Parameter
Symbol
Test Condition
Min Typ Max Units
Off Characteristics
Drain-Source Breakdown Voltage Zero Gate Voltage Drain Current Gate Body Leakage Current, Forward Gate Body Leakage Current, Reverse On Characteristics b
BVDSS IDSS IGSSF IGSSR
VGS = 0V, ID = 250µA VDS = 650V, VGS = 0V VGS = 30V, VDS = 0V VGS = -30V, VDS = 0V
650
V 1 µA 10 uA -10 uA
Gate Threshold Voltage Static Drain-Source On-Resistance
VGS(th) RDS(on)
VGS = VDS, ID = 250µA VGS = 10V, ID = 0.5A
2.5
4.5 8.5 10.5
V Ω
Dynamic Characteristics c
Input Capacitance Output Capacitance Reverse Transfer Capacitance Switching Characteristics c
Ciss Coss
VDS = 25V, VGS = 0V, f = 1.0 MHz
205 50
pF pF
Crss 20 pF
Turn-On Delay Time Turn-On Rise Time Turn-Off Delay Time
td(on) tr
td(off)
VDD = 300V, ID = 1.2A, VGS = 10V,RGEN = 4.7Ω
Turn-Off Fall Time
tf
Total Gate Charge Gate-Source Charge Gate-Drain Charge
Qg Qgs
VDS = 480V, ID = 1.2A, VGS = 10V
Qgd
Drain-Source Diode Characteristics and Maximun Ratings
11 22 ns 10 20 ns 16 32 ns 8 16 ns 6.9 9.1 nC 0.9 nC 4.6 nC
Drain-Source Diode Forward Current Drain-Source Diode Forward Voltage b
IS VSD
VGS = 0V, IS = 0.6A
1.2 A 1.5 V
Notes : a.Repetitive Rating : Pulse width limited by maximum junction temperature. b.Device Mounted on FR4 Board, t < 10 sec. c.Pulse Test : Pulse Width < 300µs, Duty Cycle < 2%. d.Guaranteed by design, not subject to production testing. e.L = 1mH, IAS =1.2A, VDD = 50V, RG = 25Ω, Starting TJ = 25 C.
2
ID, Drain Current (A)
C, Capacitance (pF)
CED02N65A/CEU02N65A
0.6 VGS=10,8,7V
0.5
0.4 VGS=5V 0.3
0.2
0.1 VGS=4V
0 0.0 1
23
45
6
VDS, Drain-to-Source Voltage (V)
Figure 1. Output Characteristics
ID, Drain Current (A)
2.4
2.0
1.6
1.2
0.8
0.4
0 1
25 C TJ=125 C
-55 C
23456
7
VGS, Gate-to-Source Voltage (V)
Figure 2. Transfer Characteristics
300
250 Ciss
200
150
100 Coss
50 Crss 0 0 5 10 15 20 25
VDS, Drain-to-Source Voltage (V)
Figure 3. Capacitance
1.3 VDS=VGS 1.2 ID=250µA
1.1
1.0
0.9
0.8
0.7
0.6 -50 -25 0 25 50 75 100 125 150
TJ, Junction Temperature( C)
Figure 5. Gate Threshold Variation with Temperature
RDS(ON), Normalized RDS(ON), On-Resistance(Ohms)
IS, Source-drain current (A)
3.0 ID=0.5A 2.5 VGS=10V 2.0 1.5 1.0 0.5 0.0
-100 -50 0 50 100 150 200
TJ, Junction Temperature( C) Figure 4. On-Resistance Variation
with Temperature
VGS=0V
100
10-1
10-2 0.2 0.6 1.0 1.4 1.8 2.2
VSD, Body Diode Forward Voltage (V) Figure 6. Body Diode Forward Voltage
Variation with Source Current
VTH, Normalized Gate-Source Threshold Voltage
3
VGS, Gate to Source Voltage (V) ID, Drain Current (A)
CED02N65A/CEU02N65A
10 VDS=480V ID=1.2A
8
6
4
2
0 0 1.2 2.4 3.6 4.8
6 7.2
Qg, Total Gate Charge (nC)
Figure 7. Gate Charge
VDD
VIN RL D VOUT
VGS RGEN G
S
101 RDS(ON)Limit
100ms 100 1ms
10ms DC 10-1
TC=25 C TJ=175 C 10-2 Single Pulse 100 101 102 103
VDS, Drain-Source Voltage (V)
Figure 8. Maximum Safe Operating Area
td(on) VOUT
t on tr
td(off)
90%
10% INVERTED
toff tf
90%
10%
VIN
10%
50%
90% 50%
PULSE WIDTH
Figure 9. Switching Test Circuit
Figure 10. Switching Waveforms
r(t),Normalized Effective Transient Thermal Impedance
100 D=0.5
10-1
0.2 0.1 0.05
10-2 10-5
0.02 0.01 Single Pulse
10-4
10-3
10-2
10-1
Square Wave Pulse Duration (sec)
PDM
t1 t2
1. R JC (t)=r (t) * R JC 2. R JC=See Datasheet 3. TJM-TC = P* R JC (t) 4. Duty Cycle, D=t1/t2
100
101
Figure 11. Normalized Thermal Transient Impedance Curve
4
.