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CEU02N65A Dataheets PDF



Part Number CEU02N65A
Manufacturers CET
Logo CET
Description N-Channel MOSFET
Datasheet CEU02N65A DatasheetCEU02N65A Datasheet (PDF)

CED02N65A/CEU02N65A N-Channel Enhancement Mode Field Effect Transistor PRELIMINARY FEATURES 650V, 1.2A, RDS(ON) = 10.5Ω @VGS = 10V. Super high dense cell design for extremely low RDS(ON). High power and current handing capability. Lead free product is acquired. TO-251 & TO-252 package. D D G S CEU SERIES TO-252(D-PAK) G DS CED SERIES TO-251(I-PAK) G S ABSOLUTE MAXIMUM RATINGS Tc = 25 C unless otherwise noted Parameter Symbol Limit Drain-Source Voltage Gate-Source Voltage Drain Curre.

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CED02N65A/CEU02N65A N-Channel Enhancement Mode Field Effect Transistor PRELIMINARY FEATURES 650V, 1.2A, RDS(ON) = 10.5Ω @VGS = 10V. Super high dense cell design for extremely low RDS(ON). High power and current handing capability. Lead free product is acquired. TO-251 & TO-252 package. D D G S CEU SERIES TO-252(D-PAK) G DS CED SERIES TO-251(I-PAK) G S ABSOLUTE MAXIMUM RATINGS Tc = 25 C unless otherwise noted Parameter Symbol Limit Drain-Source Voltage Gate-Source Voltage Drain Current-Continuous @ TC = 25 C @ TC = 100 C Drain Current-Pulsed a Maximum Power Dissipation @ TC = 25 C - Derate above 25 C VDS VGS ID IDM PD 650 ±30 1.2 0.8 4.8 35.7 0.29 Operating and Store Temperature Range TJ,Tstg -55 to 150 Thermal Characteristics Parameter Thermal Resistance, Junction-to-Case Thermal Resistance, Junction-to-Ambient Symbol RθJC RθJA Limit 3.5 50 Units V V A A A W W/ C C Units C/W C/W This is preliminary information on a new product in development now . Details are subject to change without notice . 1 Rev 1. 2011.Oct http://www.cetsemi.com CED02N65A/CEU02N65A Electrical Characteristics Tc = 25 C unless otherwise noted Parameter Symbol Test Condition Min Typ Max Units Off Characteristics Drain-Source Breakdown Voltage Zero Gate Voltage Drain Current Gate Body Leakage Current, Forward Gate Body Leakage Current, Reverse On Characteristics b BVDSS IDSS IGSSF IGSSR VGS = 0V, ID = 250µA VDS = 650V, VGS = 0V VGS = 30V, VDS = 0V VGS = -30V, VDS = 0V 650 V 1 µA 10 uA -10 uA Gate Threshold Voltage Static Drain-Source On-Resistance VGS(th) RDS(on) VGS = VDS, ID = 250µA VGS = 10V, ID = 0.5A 2.5 4.5 8.5 10.5 V Ω Dynamic Characteristics c Input Capacitance Output Capacitance Reverse Transfer Capacitance Switching Characteristics c Ciss Coss VDS = 25V, VGS = 0V, f = 1.0 MHz 205 50 pF pF Crss 20 pF Turn-On Delay Time Turn-On Rise Time Turn-Off Delay Time td(on) tr td(off) VDD = 300V, ID = 1.2A, VGS = 10V,RGEN = 4.7Ω Turn-Off Fall Time tf Total Gate Charge Gate-Source Charge Gate-Drain Charge Qg Qgs VDS = 480V, ID = 1.2A, VGS = 10V Qgd Drain-Source Diode Characteristics and Maximun Ratings 11 22 ns 10 20 ns 16 32 ns 8 16 ns 6.9 9.1 nC 0.9 nC 4.6 nC Drain-Source Diode Forward Current Drain-Source Diode Forward Voltage b IS VSD VGS = 0V, IS = 0.6A 1.2 A 1.5 V Notes : a.Repetitive Rating : Pulse width limited by maximum junction temperature. b.Device Mounted on FR4 Board, t < 10 sec. c.Pulse Test : Pulse Width < 300µs, Duty Cycle < 2%. d.Guaranteed by design, not subject to production testing. e.L = 1mH, IAS =1.2A, VDD = 50V, RG = 25Ω, Starting TJ = 25 C. 2 ID, Drain Current (A) C, Capacitance (pF) CED02N65A/CEU02N65A 0.6 VGS=10,8,7V 0.5 0.4 VGS=5V 0.3 0.2 0.1 VGS=4V 0 0.0 1 23 45 6 VDS, Drain-to-Source Voltage (V) Figure 1. Output Characteristics ID, Drain Current (A) 2.4 2.0 1.6 1.2 0.8 0.4 0 1 25 C TJ=125 C -55 C 23456 7 VGS, Gate-to-Source Voltage (V) Figure 2. Transfer Characteristics 300 250 Ciss 200 150 100 Coss 50 Crss 0 0 5 10 15 20 25 VDS, Drain-to-Source Voltage (V) Figure 3. Capacitance 1.3 VDS=VGS 1.2 ID=250µA 1.1 1.0 0.9 0.8 0.7 0.6 -50 -25 0 25 50 75 100 125 150 TJ, Junction Temperature( C) Figure 5. Gate Threshold Variation with Temperature RDS(ON), Normalized RDS(ON), On-Resistance(Ohms) IS, Source-drain current (A) 3.0 ID=0.5A 2.5 VGS=10V 2.0 1.5 1.0 0.5 0.0 -100 -50 0 50 100 150 200 TJ, Junction Temperature( C) Figure 4. On-Resistance Variation with Temperature VGS=0V 100 10-1 10-2 0.2 0.6 1.0 1.4 1.8 2.2 VSD, Body Diode Forward Voltage (V) Figure 6. Body Diode Forward Voltage Variation with Source Current VTH, Normalized Gate-Source Threshold Voltage 3 VGS, Gate to Source Voltage (V) ID, Drain Current (A) CED02N65A/CEU02N65A 10 VDS=480V ID=1.2A 8 6 4 2 0 0 1.2 2.4 3.6 4.8 6 7.2 Qg, Total Gate Charge (nC) Figure 7. Gate Charge VDD VIN RL D VOUT VGS RGEN G S 101 RDS(ON)Limit 100ms 100 1ms 10ms DC 10-1 TC=25 C TJ=175 C 10-2 Single Pulse 100 101 102 103 VDS, Drain-Source Voltage (V) Figure 8. Maximum Safe Operating Area td(on) VOUT t on tr td(off) 90% 10% INVERTED toff tf 90% 10% VIN 10% 50% 90% 50% PULSE WIDTH Figure 9. Switching Test Circuit Figure 10. Switching Waveforms r(t),Normalized Effective Transient Thermal Impedance 100 D=0.5 10-1 0.2 0.1 0.05 10-2 10-5 0.02 0.01 Single Pulse 10-4 10-3 10-2 10-1 Square Wave Pulse Duration (sec) PDM t1 t2 1. R JC (t)=r (t) * R JC 2. R JC=See Datasheet 3. TJM-TC = P* R JC (t) 4. Duty Cycle, D=t1/t2 100 101 Figure 11. Normalized Thermal Transient Impedance Curve 4 .


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