EFC6605R

Ordering number : ENA2302 EFC6605R N-Channel Power MOSFET 20V, 10A, 13.3mΩ, Dual EFCP http://onsemi.com Features 2.5V drive Protection diode in Halogen free compliance Common-drain type 2KV ESD HBM Applications Lithium-ion battery charging and discharging switch Specifications Absolute Maximum Ratings at Ta = 25°C Parameter Symbol Conditions Source to Source Voltage Gate to Source Voltage Source Current (DC) Source Current (Pulse) Total Dissipation Junction Temperature Storage Temperature VSSS VGSS IS ISP PT Tj Tstg PW≤10μs, duty cycle≤1% When mounted on ceramic substrate (5000mm2×0.8mm) Value 20 ±10 10 60 1.6 150 - 55 to +150 Unit V V A A W °C °C Stresses exceeding those listed in the Maximum Ratings table may damage the device. If any of these limits are exceeded, device functionality should not be assumed, damage may occur and reliability may be affected. Thermal Resistance Ratings Parameter Junction to Ambient When mounted on ceramic substrate (5000mm2×0.8mm) Symbol RθJA Value 78.1 Unit °C /W Electrical Characteristics at Ta = 25°C Parameter Source to Source Breakdown Voltage Zero-Gate Voltage Source Current Gate to Source Leakage Current Gate Threshold Voltage Forward Transconductance Static Source to Source On-State Resistance Symbol V(BR)SSS ISSS IGSS VGS(th) gFS RSS(on)1 RSS(on)2 RSS(on)3 RSS(on)4 RSS(on)5 Conditions IS=1mA, VGS=0V VSS=20V, VGS=0V VGS=±8V, VSS=0V VSS10V, IS=1mA VSS=10V, IS=3A IS=3A, VGS=4.5V IS=3A, VGS=4.0V IS=3A, ...