Planar Transistor. HBP1804M65 Datasheet

HBP1804M65 Transistor. Datasheet pdf. Equivalent

HBP1804M65 Datasheet
Recommendation HBP1804M65 Datasheet
Part HBP1804M65
Description Octuple High Voltage PNP Epitaxial Planar Transistor
Feature HBP1804M65; CYStech Electronics Corp. Octuple High Voltage PNP Epitaxial Planar Transistor HBP1804M65 Spec. No..
Manufacture Cystech Electonics
Datasheet
Download HBP1804M65 Datasheet




Cystech Electonics HBP1804M65
CYStech Electronics Corp.
Octuple High Voltage PNP Epitaxial Planar Transistor
HBP1804M65
Spec. No. : C619M65
Issued Date : 2015.10.28
Revised Date :
Page No. : 1/7
Description
High breakdown voltage. (BVCEO=-400V)
Low saturation voltage, typical VCE(sat) =-0.17V at Ic/IB =-20mA/-1mA.
Complementary to HBN1803M65
Pb-free lead plating and halogen-free package
Equivalent Circuit
HBP1804M65
Outline
MISWB6×5-18L-A
Top View
Bottom View
HBP1804M65
CYStek Product Specification



Cystech Electonics HBP1804M65
CYStech Electronics Corp.
Spec. No. : C619M65
Issued Date : 2015.10.28
Revised Date :
Page No. : 2/7
The following ratings and characteristics apply to each transistor in this
device.
Absolute Maximum Ratings (Ta=25°C)
Parameter
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Collector Current
Total Power Dissipation
Junction Temperature
Storage Temperature
Symbol
VCBO
VCEO
VEBO
IC
Pd
Tj
Tstg
Limits
-400
-400
-5
-300
1.5
150
-55~+150
Unit
V
V
V
mA
W
°C
°C
Characteristics (Ta=25°C)
Symbol
BVCBO
BVCEO
BVEBO
ICBO
ICES
IEBO
*VCE(sat)
*VCE(sat)
*VCE(sat)
*VBE(sat)
*hFE
*hFE
fT
Cob
Min.
-400
-400
-5
-
-
-
-
-
-
-
50
40
-
-
Typ.
-
-
-
-
-
-
-0.17
-0.18
-0.18
-0.73
-
-
100
4.6
Max.
-
-
-
-100
-100
-100
-0.3
-0.3
-0.3
-1
300
-
-
-
Unit
V
V
V
nA
nA
nA
V
V
V
V
-
-
MHz
pF
Test Conditions
IC=-50μA
IC=-1mA
IE=-50μA
VCB=-400V
VCE=-300V, REB=0Ω
VEB=-5V
IC=-20mA, IB=-1mA
IC=-50mA, IB=-5mA
IC=-100mA, IB=-20mA
IC=-20mA, IB=-2mA
VCE=-10V, IC=-10mA
VCE=-10V, IC=-100mA
VCE=-10V, IC=-10mA, f=5MHz
VCB=-10V, IE=0A, f=1MHz
*Pulse Test: Pulse Width 380μs, Duty Cycle2%
HBP1804M65
CYStek Product Specification



Cystech Electonics HBP1804M65
CYStech Electronics Corp.
Typical Characteristics
Spec. No. : C619M65
Issued Date : 2015.10.28
Revised Date :
Page No. : 3/7
0.12
0.1
0.08
0.06
0.04
0.02
0
0
Emitter Grounded Output Characteristics
5mA
2.5mA
1.5mA
1mA
-IB=500uA
12 34 5
-VCE, Collector-to-Emitter Voltage(V)
6
0.2
0.18
0.16
0.14
0.12
0.1
0.08
0.06
0.04
0.02
0
0
Emitter Grounded Output Characteristics
20mA
10mA
6mA
4mA
-IB=2mA
12 34 5
-VCE, Collector-to-Emitter Voltage(V)
6
1000
100
10
Current Gain vs Collector Current
Tj=125°C
75°C
25°C
0°C
-40°C
1000
100
Current Gain vs Collector Current
Tj=125°C
75°C
25°C
0°C
-40°C
-VCE=5V
1
0.1
1 10 100
-IC, Collector Current(mA)
1000
-VCE=10V
10
0.1
1 10 100
-IC, Collector Current(mA)
1000
Saturation Voltage vs Collector Current
1000
VCESAT@IC=10IB
Saturation Voltage vs Collector Current
1000
VCESAT@IC=20IB
100
10
0.1
 ‐40°C
     0°C
   25°C
   75°C
 125°C
1 10 100
-IC, Collector Current(mA)
1000
100
10
0.1
HBP1804M65
-40°C
0°C
25°C
75°C
125°C
1 10 100
-IC, Collector Current(mA)
1000
CYStek Product Specification







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