MTA050P02DFJ6

CYStech Electronics Corp. Spec. No. : C394DFJ6 Issued Date : 2015.09.03 Revised Date : Page No. : 1/9 -20V P-Channel Enhancement Mode MOSFET MTA050P02DFJ6 BVDSS ID@VGS=-4.5V, TC=25°C ID@VGS=-4.5V, TA=25°C RDSON@VGS=-4.5V, ID=-3A Features Low on-resistance Excellent thermal and electrical capabilities Pb-free lead plating and halogen-free package RDSON@VGS=-2.5V, ID=-3A RDSON@VGS=-1.8V, ID=-3A -20V -14.2A -5.2A 33.4mΩ(typ.) 46.4mΩ(typ.) 71.4mΩ(typ.) Equivalent Circuit MTA050P02DFJ6 Outline DFNWB2×2-6L-J G：Gate S：Source D：Drain Ordering Information Device MTA050P02DFJ6-0-T1-G Package DFNWB2×2-6L-J (Pb-free lead plating and halogen-free package) Shipping 3000 pcs / tape & reel Environment friendly grade : S for RoHS compliant products, G for RoHS compliant and green compound products Packing spec, T1 : 3000 pcs / tape & reel,7” reel Product rank, zero for no rank products Product name MTA050P02DFJ6 CYStek Product Specification CYStech Electronics Corp. Absolute Maximum Ratings (Ta=25°C) Parameter Drain-Source Voltage Gate-Source Voltage Continuous Drain Current @ TA=25°C, VGS=-4.5V Continuous Drain Current @ TA=70°C, VGS=-4.5V Continuous Drain Current @ TC=25°C, VGS=-4.5V (Note 3) (Note 3) Continuous Drain Current @ TC=70°C, VGS=-4.5V Pulsed Drain Current (Note 1, 2) Power Dissipation @ TA=25℃ (Note 3) Power Dissipation @ TA=70℃ (Note 3) Power Dissipation @ TC=25℃ Power Dissipation @ TC=70℃ Operating Junction and Storage Temperature Symbol ...