MTB015N10QH8

CYStech Electronics Corp. Spec. No. : C141H8 Issued Date : 2015.10.13 Revised Date : Page No. : 1/9 N-Channel Logic Level Enhancement Mode Power MOSFET MTB015N10QH8 BVDSS ID@VGS=10V, TC=25°C ID@VGS=10V, TA=25°C RDSON(typ)@VGS=10V, ID=15A RDSON(typ)@VGS=4.5V, ID=10A Features Single Drive Requirement Low On-resistance Fast Switching Characteristic Pb-free lead plating and Halogen-free package 100 V 39 A 8.8A 12 mΩ 16 mΩ Symbol MTB015N10QH8 Outline Pin 1 DFN5×6 G：Gate D：Drain S：Source Ordering Information Device Package Shipping MTB015N10QH8-0-T6-G DFN5×6 (Pb-free lead plating and halogen-free package) 3000 pcs / Tape & Reel Environment friendly grade : S for RoHS compliant products, G for RoHS compliant and green compound products Packing spec, T6 : 3000 pcs / tape & reel,13” reel Product rank, zero for no rank products Product name MTB015N10QH8 CYStek Product Specification CYStech Electronics Corp. Spec. No. : C141H8 Issued Date : 2015.10.13 Revised Date : Page No. : 2/9 Absolute Maximum Ratings (Ta=25°C) Parameter Drain-Source Voltage Gate-Source Voltage Continuous Drain Current @ TC=25°C, VGS=10V Continuous Drain Current @ TC=100°C, VGS=10V Continuous Drain Current @ TA=25°C, VGS=10V Continuous Drain Current @ TA=70°C, VGS=10V Pulsed Drain Current Avalanche Current Avalanche Energy @ L=0.1mH, ID=39A, VDD=15V Repetitive Avalanche Energy @ L=0.05mH TC=25℃ Total Power Dissipation TC=100℃ TA=25℃ TA=70℃ Operating Junction and Storage Tem...