Document
CYStech Electronics Corp.
Spec. No. : C123N3 Issued Date : 2015.11.09
Revised Date : Page No. : 1/9
-80V P-Channel Enhancement Mode MOSFET
MTB110P08KN3 BVDSS ID @ VGS=-10V, TA=25°C RDSON@VGS=-10V, ID=-2A
RDSON@VGS=-4.5V,ID=-1A
-80V -2.2A
104mΩ(typ)
141mΩ(typ)
Features
• Low gate charge • Compact and low profile SOT-23 package • Advanced trench process technology • High density cell design for ultra low on resistance • ESD protected gate • Pb-free lead plating package
Symbol
MTB110P08KN3
Outline
SOT-23 D
G:Gate S:Source D:Drain
GS
Ordering Information
Device MTB110P08KN3-0-T1-G
Package
SOT-23 (Pb-free lead plating and halogen-free package)
Shipping 3000 pcs / tape & reel
Environment friendly grade : S for RoHS compliant products, G for RoHS compliant and green compound products
Packing spec, T1 : 3000 pcs / tape & reel, 7” reel
Product rank, zero for no rank products
Product name
MTB110P08KN3
CYStek Product Specification
CYStech Electronics Corp.
Spec. No. : C123N3 Issued Date : 2015.11.09
Revised Date : Page No. : 2/9
Absolute Maximum Ratings (Ta=25°C)
Parameter
Drain-Source Voltage Gate-Source Voltage Continuous Drain Current @ TA=25°C , VGS=-10V (Note 3) Continuous Drain Current @ TA=70°C, VGS=-10V (Note 3) Pulsed Drain Current (Notes 1, 2)
Maximum Power Dissipation (Note 3) Linear Derating Factor
Operating Junction and Storage Temperature Range
Symbol VDS VGS
ID IDM PD
Tj ; Tstg
Limits -80 ±20 -2.2 -1.8 -20
1.38
0.01 -55~+150
Unit V
A
W W/°C
°C
Note : 1. Pulse width limited by maximum junction temperature. 2. Pulse width≤ 300μs, duty cycle≤2%.
3. Surface mounted on 1 in² copper pad of FR-4 board; 270°C/W when mounted on minimum copper pad
Thermal Performance
Parameter Thermal Resistance, Junction-to-Ambient(PCB mounted)
Symbol Rth,ja
Limit 90
Note : Surface mounted on 1 in² copper pad of FR-4 board; 270°C/W when mounted on minimum copper pad
Unit °C/W
Electrical Characteristics (Tj=25°C, unless otherwise noted)
Symbol
Min. Typ. Max. Unit
Test Conditions
Static BVDSS
∆BVDSS/∆Tj VGS(th) IGSS
IDSS
*RDS(ON)
*GFS
Dynamic Ciss Coss Crss td(ON) tr td(OFF) tf
-80 -
- V VGS=0V, ID=-250μA
- 0.08 - V/°C Reference to 25°C, ID=-250μA
-1.0 - -2.5 V VDS=VGS, ID=-250μA
- - ±10
VGS=±20V, VDS=0V
- - -1 μA VDS=-80V, VGS=0V
- - -10
VDS=-64V, VGS=0V (Tj=70°C)
-
104 141
135 185
mΩ
ID=-2A, VGS=-10V ID=-1A, VGS=-4.5V
- 5.2 -
S VDS=-10V, ID=-2A
- 537 - 52 - 37 - 7.4 - 17.4 - 36 - 24.8 -
pF VDS=-30V, VGS=0V, f=1MHz
ns
VDS=-40V, ID=-1A, VGS=-10V RG=10Ω
MTB110P08KN3
CYStek Product Specification
Qg Qgs Qgd
Source-Drain Diode *VSD Trr Qrr
-
-
CYStech Electronics Corp.
Spec. No. : C123N3 Issued Date : 2015.11.09
Revised Date : Page No. : 3/9
7.4 2.2 - nC VDS=-40V, ID=-2A, VGS=-5V
3.2 -
-0.8 -1.2 14 9.5 -
V VGS=0V, IS=-2A
ns nC
VGS=0V, IF=-2A, dIF/dt=100A/μs
*Pulse Test : Pulse Width ≤300μs, Duty Cycle≤2%
Recommended Soldering Footprint
MTB110P08KN3
CYStek Product Specification
-ID, Drain Current(A)
RDS(ON), Static Drain-Source On-State Resistance(mΩ)
CYStech Electronics Corp.
Spec. No. : C123N3 Issued Date : 2015.11.09
Revised Date : Page No. : 4/9
Typical Characteristics
20 18 16 14 12 10 8 6 4 2 0
0
Typical Output Characteristics
10V
9V
8V 7V
5V
6V
-VGS=4V
-VGS=3.5V
-VGS=3V
1234 -VDS, Drain-Source Voltage(V)
5
-BVDSS, Normalized Drain-Source Breakdown Voltage
Brekdown Voltage vs Ambient Temperature 1.4
1.2
1.0
0.8
0.6 ID=-250μA, VGS=0V
0.4 -75 -50 -25 0 25 50 75 100 125 150 175 Tj, Junction Temperature(°C)
Static Drain-Source On-State resistance vs Drain Current
200
180
160 VGS=-4.5V 140
120
100
80 VGS=-10V 60
40
20
0 0.01
0.1 1 -ID, Drain Current(A)
10
-VSD, Source-Drain Voltage(V)
Reverse Drain Current vs Source-Drain Voltage 1.2
VGS=0V 1.0
Tj=25°C
0.8 0.6 Tj=150°C
0.4
0.2 0
2 46 8 -IDR, Reverse Drain Current(A)
10
Static Drain-Source On-State Resistance vs Gate-Source Voltage
1000 ID=-2A
800
600
400
200
0 0 2 4 6 8 10 -VGS, Gate-Source Voltage(V)
RDS(ON), Normalized Static DrainSource On-State Resistance
Drain-Source On-State Resistance vs Junction Tempearture
2.0 1.8 VGS=-10V, ID=-2A 1.6 1.4 1.2 1.0 0.8 0.6 RDS(ON)@Tj=25°C : 104mΩ typ 0.4
-75 -50 -25 0 25 50 75 100 125 150 175 Tj, Junction Temperature(°C)
RDS(ON), Static Drain-Source OnState Resistance(mΩ)
MTB110P08KN3
CYStek Product Specification
Capacitance---(pF)
GFS, Forward Transfer Admittance(S)
CYStech Electronics Corp.
Spec. No. : C123N3 Issued Date : 2015.11.09
Revised Date : Page No. : 5/9
Typical Characteristics(Cont.)
-VGS(th), Normalized Threshold Voltage
Capacitance vs Drain-to-Source Voltage
1000
Ciss
Threshold Voltage vs Junction Tempearture
1.4
1.2 ID=-1mA
1.0
100 C oss
f=1MHz
Crss
10 0
5 10 15 20 25 -VDS, Drain-Source Voltage(V)
30
0.8
0.6 ID=-250μA
0.4
0.2 -75 -50 -25 0 25 50 75 100 125 150 175 Tj, Junction Temperature(°C)
Forward Transfer Admittance vs Drain Current 10
1
Gate Charge Characteristics 10
VDS=-16V 8
VDS=-40V 6
-V.