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MTB110P08KN3 Dataheets PDF



Part Number MTB110P08KN3
Manufacturers Cystech Electonics
Logo Cystech Electonics
Description P-Channel Enhancement Mode MOSFET
Datasheet MTB110P08KN3 DatasheetMTB110P08KN3 Datasheet (PDF)

CYStech Electronics Corp. Spec. No. : C123N3 Issued Date : 2015.11.09 Revised Date : Page No. : 1/9 -80V P-Channel Enhancement Mode MOSFET MTB110P08KN3 BVDSS ID @ VGS=-10V, TA=25°C RDSON@VGS=-10V, ID=-2A RDSON@VGS=-4.5V,ID=-1A -80V -2.2A 104mΩ(typ) 141mΩ(typ) Features • Low gate charge • Compact and low profile SOT-23 package • Advanced trench process technology • High density cell design for ultra low on resistance • ESD protected gate • Pb-free lead plating package Symbol MTB110P08KN3 Ou.

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CYStech Electronics Corp. Spec. No. : C123N3 Issued Date : 2015.11.09 Revised Date : Page No. : 1/9 -80V P-Channel Enhancement Mode MOSFET MTB110P08KN3 BVDSS ID @ VGS=-10V, TA=25°C RDSON@VGS=-10V, ID=-2A RDSON@VGS=-4.5V,ID=-1A -80V -2.2A 104mΩ(typ) 141mΩ(typ) Features • Low gate charge • Compact and low profile SOT-23 package • Advanced trench process technology • High density cell design for ultra low on resistance • ESD protected gate • Pb-free lead plating package Symbol MTB110P08KN3 Outline SOT-23 D G:Gate S:Source D:Drain GS Ordering Information Device MTB110P08KN3-0-T1-G Package SOT-23 (Pb-free lead plating and halogen-free package) Shipping 3000 pcs / tape & reel Environment friendly grade : S for RoHS compliant products, G for RoHS compliant and green compound products Packing spec, T1 : 3000 pcs / tape & reel, 7” reel Product rank, zero for no rank products Product name MTB110P08KN3 CYStek Product Specification CYStech Electronics Corp. Spec. No. : C123N3 Issued Date : 2015.11.09 Revised Date : Page No. : 2/9 Absolute Maximum Ratings (Ta=25°C) Parameter Drain-Source Voltage Gate-Source Voltage Continuous Drain Current @ TA=25°C , VGS=-10V (Note 3) Continuous Drain Current @ TA=70°C, VGS=-10V (Note 3) Pulsed Drain Current (Notes 1, 2) Maximum Power Dissipation (Note 3) Linear Derating Factor Operating Junction and Storage Temperature Range Symbol VDS VGS ID IDM PD Tj ; Tstg Limits -80 ±20 -2.2 -1.8 -20 1.38 0.01 -55~+150 Unit V A W W/°C °C Note : 1. Pulse width limited by maximum junction temperature. 2. Pulse width≤ 300μs, duty cycle≤2%. 3. Surface mounted on 1 in² copper pad of FR-4 board; 270°C/W when mounted on minimum copper pad Thermal Performance Parameter Thermal Resistance, Junction-to-Ambient(PCB mounted) Symbol Rth,ja Limit 90 Note : Surface mounted on 1 in² copper pad of FR-4 board; 270°C/W when mounted on minimum copper pad Unit °C/W Electrical Characteristics (Tj=25°C, unless otherwise noted) Symbol Min. Typ. Max. Unit Test Conditions Static BVDSS ∆BVDSS/∆Tj VGS(th) IGSS IDSS *RDS(ON) *GFS Dynamic Ciss Coss Crss td(ON) tr td(OFF) tf -80 - - V VGS=0V, ID=-250μA - 0.08 - V/°C Reference to 25°C, ID=-250μA -1.0 - -2.5 V VDS=VGS, ID=-250μA - - ±10 VGS=±20V, VDS=0V - - -1 μA VDS=-80V, VGS=0V - - -10 VDS=-64V, VGS=0V (Tj=70°C) - 104 141 135 185 mΩ ID=-2A, VGS=-10V ID=-1A, VGS=-4.5V - 5.2 - S VDS=-10V, ID=-2A - 537 - 52 - 37 - 7.4 - 17.4 - 36 - 24.8 - pF VDS=-30V, VGS=0V, f=1MHz ns VDS=-40V, ID=-1A, VGS=-10V RG=10Ω MTB110P08KN3 CYStek Product Specification Qg Qgs Qgd Source-Drain Diode *VSD Trr Qrr - - CYStech Electronics Corp. Spec. No. : C123N3 Issued Date : 2015.11.09 Revised Date : Page No. : 3/9 7.4 2.2 - nC VDS=-40V, ID=-2A, VGS=-5V 3.2 - -0.8 -1.2 14 9.5 - V VGS=0V, IS=-2A ns nC VGS=0V, IF=-2A, dIF/dt=100A/μs *Pulse Test : Pulse Width ≤300μs, Duty Cycle≤2% Recommended Soldering Footprint MTB110P08KN3 CYStek Product Specification -ID, Drain Current(A) RDS(ON), Static Drain-Source On-State Resistance(mΩ) CYStech Electronics Corp. Spec. No. : C123N3 Issued Date : 2015.11.09 Revised Date : Page No. : 4/9 Typical Characteristics 20 18 16 14 12 10 8 6 4 2 0 0 Typical Output Characteristics 10V 9V 8V 7V 5V 6V -VGS=4V -VGS=3.5V -VGS=3V 1234 -VDS, Drain-Source Voltage(V) 5 -BVDSS, Normalized Drain-Source Breakdown Voltage Brekdown Voltage vs Ambient Temperature 1.4 1.2 1.0 0.8 0.6 ID=-250μA, VGS=0V 0.4 -75 -50 -25 0 25 50 75 100 125 150 175 Tj, Junction Temperature(°C) Static Drain-Source On-State resistance vs Drain Current 200 180 160 VGS=-4.5V 140 120 100 80 VGS=-10V 60 40 20 0 0.01 0.1 1 -ID, Drain Current(A) 10 -VSD, Source-Drain Voltage(V) Reverse Drain Current vs Source-Drain Voltage 1.2 VGS=0V 1.0 Tj=25°C 0.8 0.6 Tj=150°C 0.4 0.2 0 2 46 8 -IDR, Reverse Drain Current(A) 10 Static Drain-Source On-State Resistance vs Gate-Source Voltage 1000 ID=-2A 800 600 400 200 0 0 2 4 6 8 10 -VGS, Gate-Source Voltage(V) RDS(ON), Normalized Static DrainSource On-State Resistance Drain-Source On-State Resistance vs Junction Tempearture 2.0 1.8 VGS=-10V, ID=-2A 1.6 1.4 1.2 1.0 0.8 0.6 RDS(ON)@Tj=25°C : 104mΩ typ 0.4 -75 -50 -25 0 25 50 75 100 125 150 175 Tj, Junction Temperature(°C) RDS(ON), Static Drain-Source OnState Resistance(mΩ) MTB110P08KN3 CYStek Product Specification Capacitance---(pF) GFS, Forward Transfer Admittance(S) CYStech Electronics Corp. Spec. No. : C123N3 Issued Date : 2015.11.09 Revised Date : Page No. : 5/9 Typical Characteristics(Cont.) -VGS(th), Normalized Threshold Voltage Capacitance vs Drain-to-Source Voltage 1000 Ciss Threshold Voltage vs Junction Tempearture 1.4 1.2 ID=-1mA 1.0 100 C oss f=1MHz Crss 10 0 5 10 15 20 25 -VDS, Drain-Source Voltage(V) 30 0.8 0.6 ID=-250μA 0.4 0.2 -75 -50 -25 0 25 50 75 100 125 150 175 Tj, Junction Temperature(°C) Forward Transfer Admittance vs Drain Current 10 1 Gate Charge Characteristics 10 VDS=-16V 8 VDS=-40V 6 -V.


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