MTB1K0P25J3

CYStech Electronics Corp. Spec. No. : C091J3 Issued Date : 2015.10.07 Revised Date : 2015.10.13 Page No. : 1/9 P-Channel Enhancement Mode Power MOSFET MTB1K0P25J3 BVDSS ID@VGS=-10V, TC=25°C RDS(ON)@VGS=-10V, ID=-3A RDS(ON)@VGS=-4.5V, ID=-3A -250V -3.2A 1.0Ω(typ) 1.1Ω(typ) Features Low Gate Charge Simple Drive Requirement Pb-free Lead Plating & Halogen-free Package Equivalent Circuit MTB1K0P25J3 Outline TO-252(DPAK) G：Gate D：Drain S：Source G DS Ordering Information Device MTB1K0P25J3-0-T3-G Package TO-252 (Pb-free lead plating & halogen-free package) Shipping 2500 pcs / Tape & Reel Environment friendly grade : S for RoHS compliant products, G for RoHS compliant and green compound products Packing spec, T3 : 2500 pcs / tape & reel, 13” reel Product rank, zero for no rank products Product name MTB1K0P25J3 CYStek Product Specification CYStech Electronics Corp. Spec. No. : C091J3 Issued Date : 2015.10.07 Revised Date : 2015.10.13 Page No. : 2/9 Absolute Maximum Ratings (TC=25°C, unless otherwise noted) Parameter Symbol Drain-Source Voltage Gate-Source Voltage Continuous Drain Current @TC=25°C, VGS=-10V Continuous Drain Current @TC=100°C, VGS=-10V Continuous Drain Current @TA=25°C, VGS=-10V Continuous Drain Current @TA=70°C, VGS=-10V Pulsed Drain Current Avalanche Current Avalanche Energy @ L=10mH, ID=-3.2A, VDD=-50V TC=25°C Total Power Dissipation TC=100°C TA=25°C TA=70°C Operating Junction and Storage Temperature Range (Note 1) (Note 1) (...