MTD170P06KN3

CYStech Electronics Corp. Spec. No. : C106N3 Issued Date : 2015.11.11 Revised Date : 2015.11.13 Page No. : 1/9 -60V P-Channel Enhancement Mode MOSFET MTD170P06KN3 BVDSS ID @ VGS=-10V, TA=25°C RDSON@VGS=-10V, ID=-2A RDSON@VGS=-4.5V,ID=-1A -60V -2.2A 137mΩ(typ) 209mΩ(typ) Features Low gate charge Compact and low profile SOT-23 package Advanced trench process technology High density cell design for ultra low on resistance ESD protected gate Pb-free lead plating package Symbol MTD170P06KN3 Outline SOT-23 D G：Gate S：Source D：Drain GS Ordering Information Device MTD170P06KN3-0-T1-G Package SOT-23 (Pb-free lead plating and halogen-free package) Shipping 3000 pcs / tape & reel Environment friendly grade : S for RoHS compliant products, G for RoHS compliant and green compound products Packing spec, T1 : 3000 pcs / tape & reel, 7” reel Product rank, zero for no rank products Product name MTD170P06KN3 CYStek Product Specification CYStech Electronics Corp. Spec. No. : C106N3 Issued Date : 2015.11.11 Revised Date : 2015.11.13 Page No. : 2/9 Absolute Maximum Ratings (Ta=25°C) Parameter Drain-Source Voltage Gate-Source Voltage Continuous Drain Current @ TA=25°C , VGS=-10V (Note 3) Continuous Drain Current @ TA=70°C, VGS=-10V (Note 3) Pulsed Drain Current (Notes 1, 2) Maximum Power Dissipation (Note 3) Linear Derating Factor Operating Junction and Storage Temperature Range Symbol VDS VGS ID IDM PD Tj ; Tstg Limits -60 ±20 -2.2 -1.8 -12 1.38 0.01 -55~+150 Un...