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MTE110P10KQ8 Dataheets PDF



Part Number MTE110P10KQ8
Manufacturers Cystech Electonics
Logo Cystech Electonics
Description P-Channel Enhancement Mode MOSFET
Datasheet MTE110P10KQ8 DatasheetMTE110P10KQ8 Datasheet (PDF)

CYStech Electronics Corp. Spec. No. : C165Q8 Issued Date : 2015.09.24 Revised Date : Page No. : 1/9 P-Channel Enhancement Mode Power MOSFET MTE110P10KQ8 Features • Simple drive requirement • Low on-resistance • Fast switching speed • ESD protected gate • Pb-free and Halogen-free package BVDSS ID@VGS=-10V, TA=25°C RDSON@VGS=-10V, ID=-2A RDSON@VGS=-6V, ID=-2A -100V -3.7A 97mΩ(typ) 113mΩ(typ) Equivalent Circuit MTE110P10KQ8 Outline SOP-8 G:Gate S:Source D:Drain Ordering Information Device.

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CYStech Electronics Corp. Spec. No. : C165Q8 Issued Date : 2015.09.24 Revised Date : Page No. : 1/9 P-Channel Enhancement Mode Power MOSFET MTE110P10KQ8 Features • Simple drive requirement • Low on-resistance • Fast switching speed • ESD protected gate • Pb-free and Halogen-free package BVDSS ID@VGS=-10V, TA=25°C RDSON@VGS=-10V, ID=-2A RDSON@VGS=-6V, ID=-2A -100V -3.7A 97mΩ(typ) 113mΩ(typ) Equivalent Circuit MTE110P10KQ8 Outline SOP-8 G:Gate S:Source D:Drain Ordering Information Device MTE110P10KQ8-0-T3-G Package SOP-8 (Pb-free lead plating and halogen-free package) Shipping 2500 pcs / tape & reel Environment friendly grade : S for RoHS compliant products, G for RoHS compliant and green compound products Packing spec, T3 : 2500 pcs / tape & reel, 13” reel Product rank, zero for no rank products Product name MTE110P10KQ8 CYStek Product Specification CYStech Electronics Corp. Spec. No. : C165Q8 Issued Date : 2015.09.24 Revised Date : Page No. : 2/9 Absolute Maximum Ratings (TC=25°C, unless otherwise noted) Parameter Drain-Source Breakdown Voltage Gate-Source Voltage Continuous Drain Current @TA=25 °C , VGS=-10V Continuous Drain Current @TA=70 °C , VGS=-10V Pulsed Drain Current (Note 1) Single Pulse Avalanche Current Single Pulse Avalanche Energy @ L=5mH, IAS=-3.7A, VDD=-25V Power Dissipation (Note 2) TA=25 °C TA=70 °C Operating Junction and Storage Temperature Range Symbol BVDSS VGS ID IDM IAS EAS PD Tj ; Tstg Note : 1.Pulse width limited by maximum junction temperature. 2.Surface mounted on 1 in² copper pad of FR-4 board, t≤10s. Limits -100 ±20 -3.7 -3.0 -20 -3.7 34 3.1 2.0 -55~+150 Unit V A mJ W °C Thermal Resistance Ratings Thermal Resistance Symbol Maximum Junction-to-Case Junction-to-Ambient (Note) RθJC RθJA 5 40 Note : When mounted on a 1 in2 pad of 2 oz copper, t≤10s; 125°C/W when mounted on minimum copper pad. Unit °C / W Electrical Characteristics (Tc=25°C, unless otherwise noted) Symbol Min. Typ. Max. Unit Test Conditions Static BVDSS VGS(th) -100 -2.0 - -4.0 V VGS=0V, ID=-250μA VDS=-10V, ID=-1mA IGSS - - ±10 VGS=±20V, VDS=0V IDSS - - -1 μA VDS=-80V, VGS=0V - - -25 VDS=-80V, VGS=0V, Tj=85°C RDS(ON) (Note 1) - 97 113 126 150 mΩ ID=-2A, VGS=-10V ID=-2A, VGS=-6V GFS (Note 1) - 5.8 - S VDS=-10V, ID=-2A Dynamic Ciss - 976 - Coss - 124 - pF VDS=-20V, VGS=0V, f=1MHz Crss - 48 - td(ON) (Note 1&2) - 11 - tr (Note 1&2) td(OFF) (Note 1&2) - 17.2 52.8 - ns VDS=-50V, ID=-1A, VGS=-10V, RG=6Ω tf (Note 1&2) - 47.8 - MTE110P10KQ8 CYStek Product Specification CYStech Electronics Corp. Spec. No. : C165Q8 Issued Date : 2015.09.24 Revised Date : Page No. : 3/9 Electrical Characteristics(Cont.) (Tj=25°C, unless otherwise specified) Symbol Qg Qgs Qgd (Note 1&2) (Note 1&2) (Note 1&2) Source-Drain Diode IS ISM(Note 3) VSD(Note 1) trr Qrr Min. - - Typ. 18.7 4.5 5.5 -0.75 23 27 Note : 1.Pulse Test : Pulse Width ≤300μs, Duty Cycle≤2% 2.Independent of operating temperature 3.Pulse width limited by maximum junction temperature Max. - -3.7 -20 -1.2 - Unit Test Conditions nC VDS=-80V, ID=-3.7A, VGS=-10V A V IS=-2A, VGS=0V ns nC IF=-2A, dIF/dt=100A/μs Recommended Soldering Footprint MTE110P10KQ8 CYStek Product Specification CYStech Electronics Corp. Spec. No. : C165Q8 Issued Date : 2015.09.24 Revised Date : Page No. : 4/9 Typical Characteristics -ID, Drain Current (A) Typical Output Characteristics 20.0 -10V, -9V,-8V,-7V 16.0 -6V 12.0 8.0 -5V 4.0 VGS=-4.5V 0.0 0 24 68 -VDS, Drain-Source Voltage(V) 10 1000 Static Drain-Source On-State resistance vs Drain Current VGS=-4.5V 100 VGS=-6V VGS=-10V -BVDSS, Normalized Drain-Source Breakdown Voltage Normalized Brekdown Voltage vs Ambient Temperature 1.4 1.2 1 0.8 ID=-250μA, VGS=0V 0.6 -75 -50 -25 0 25 50 75 100 125 150 175 Tj, Junction Temperature(°C) Source Drain Current vs Source-Drain Voltage 1.2 VGS=0V 1 Tj=25°C 0.8 0.6 Tj=150°C 0.4 -VSD, Source-Drain Voltage(V) RDS(on), Static Drain-Source On-State Resistance(mΩ) RDS(on), Static Drain-Source OnState Resistance(mΩ) 10 0.1 1 10 -ID, Drain Current(A) 100 Static Drain-Source On-State Resistance vs Gate-Source Voltage 500 450 400 ID=-2A 350 300 250 200 150 100 50 0 0 2 4 6 8 10 -VGS, Gate-Source Voltage(V) RDS(on), Normalized Static DrainSource On-State Resistance 0.2 0 4 8 12 16 -IS, Source Drain Current(A) 20 Normalized Drain-Source On-State Resistance vs Junction Tempearture 2.2 2 VGS=-10V, ID=-2A 1.8 1.6 1.4 1.2 1 0.8 0.6 0.4 RDS(ON)@Tj=25°C : 97mΩ typ. 0.2 -75 -50 -25 0 25 50 75 100 125 150 175 Tj, Junction Temperature(°C) MTE110P10KQ8 CYStek Product Specification CYStech Electronics Corp. Spec. No. : C165Q8 Issued Date : 2015.09.24 Revised Date : Page No. : 5/9 Typical Characteristics(Cont.) 10000 Capacitance vs Drain-to-Source Voltage Capacitance---(pF) 1000 100 10 0.1 Ciss C oss Crss 1 10 -VDS, Drain-Source Voltage(V) 100 -VGS(th), Normalized Threshold Voltage Normalized Thresh.


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