Document
CYStech Electronics Corp.
Spec. No. : C165Q8 Issued Date : 2015.09.24 Revised Date : Page No. : 1/9
P-Channel Enhancement Mode Power MOSFET
MTE110P10KQ8
Features
• Simple drive requirement • Low on-resistance • Fast switching speed • ESD protected gate • Pb-free and Halogen-free package
BVDSS ID@VGS=-10V, TA=25°C RDSON@VGS=-10V, ID=-2A
RDSON@VGS=-6V, ID=-2A
-100V -3.7A
97mΩ(typ) 113mΩ(typ)
Equivalent Circuit
MTE110P10KQ8
Outline
SOP-8
G:Gate S:Source D:Drain
Ordering Information
Device MTE110P10KQ8-0-T3-G
Package
SOP-8 (Pb-free lead plating and halogen-free package)
Shipping 2500 pcs / tape & reel
Environment friendly grade : S for RoHS compliant products, G for RoHS compliant and green compound products
Packing spec, T3 : 2500 pcs / tape & reel, 13” reel
Product rank, zero for no rank products Product name
MTE110P10KQ8
CYStek Product Specification
CYStech Electronics Corp.
Spec. No. : C165Q8 Issued Date : 2015.09.24 Revised Date : Page No. : 2/9
Absolute Maximum Ratings (TC=25°C, unless otherwise noted)
Parameter
Drain-Source Breakdown Voltage
Gate-Source Voltage
Continuous Drain Current @TA=25 °C , VGS=-10V
Continuous Drain Current @TA=70 °C , VGS=-10V
Pulsed Drain Current (Note 1)
Single Pulse Avalanche Current
Single Pulse Avalanche Energy @ L=5mH, IAS=-3.7A, VDD=-25V
Power Dissipation (Note 2)
TA=25 °C TA=70 °C
Operating Junction and Storage Temperature Range
Symbol BVDSS
VGS
ID
IDM IAS EAS
PD
Tj ; Tstg
Note : 1.Pulse width limited by maximum junction temperature. 2.Surface mounted on 1 in² copper pad of FR-4 board, t≤10s.
Limits -100 ±20 -3.7
-3.0 -20 -3.7 34
3.1 2.0 -55~+150
Unit V
A
mJ W °C
Thermal Resistance Ratings
Thermal Resistance
Symbol
Maximum
Junction-to-Case Junction-to-Ambient (Note)
RθJC RθJA
5 40
Note : When mounted on a 1 in2 pad of 2 oz copper, t≤10s; 125°C/W when mounted on minimum copper pad.
Unit °C / W
Electrical Characteristics (Tc=25°C, unless otherwise noted)
Symbol
Min. Typ. Max. Unit
Test Conditions
Static
BVDSS VGS(th)
-100 -2.0
-
-4.0
V
VGS=0V, ID=-250μA VDS=-10V, ID=-1mA
IGSS
- - ±10
VGS=±20V, VDS=0V
IDSS
- - -1 μA VDS=-80V, VGS=0V
- - -25
VDS=-80V, VGS=0V, Tj=85°C
RDS(ON) (Note 1)
-
97 113
126 150
mΩ
ID=-2A, VGS=-10V ID=-2A, VGS=-6V
GFS (Note 1) - 5.8 - S VDS=-10V, ID=-2A
Dynamic
Ciss - 976 -
Coss
- 124 - pF VDS=-20V, VGS=0V, f=1MHz
Crss - 48 -
td(ON) (Note 1&2)
-
11
-
tr (Note 1&2) td(OFF) (Note 1&2)
-
17.2 52.8
-
ns
VDS=-50V, ID=-1A, VGS=-10V, RG=6Ω
tf (Note 1&2)
-
47.8
-
MTE110P10KQ8
CYStek Product Specification
CYStech Electronics Corp.
Spec. No. : C165Q8 Issued Date : 2015.09.24 Revised Date : Page No. : 3/9
Electrical Characteristics(Cont.) (Tj=25°C, unless otherwise specified)
Symbol
Qg Qgs Qgd
(Note 1&2) (Note 1&2) (Note 1&2)
Source-Drain Diode IS
ISM(Note 3) VSD(Note 1)
trr Qrr
Min. -
-
Typ. 18.7 4.5 5.5
-0.75 23 27
Note : 1.Pulse Test : Pulse Width ≤300μs, Duty Cycle≤2% 2.Independent of operating temperature 3.Pulse width limited by maximum junction temperature
Max. -
-3.7 -20 -1.2
-
Unit Test Conditions nC VDS=-80V, ID=-3.7A, VGS=-10V
A
V IS=-2A, VGS=0V
ns nC
IF=-2A, dIF/dt=100A/μs
Recommended Soldering Footprint
MTE110P10KQ8
CYStek Product Specification
CYStech Electronics Corp.
Spec. No. : C165Q8 Issued Date : 2015.09.24 Revised Date : Page No. : 4/9
Typical Characteristics
-ID, Drain Current (A)
Typical Output Characteristics 20.0
-10V, -9V,-8V,-7V 16.0
-6V 12.0
8.0 -5V
4.0 VGS=-4.5V
0.0 0
24 68 -VDS, Drain-Source Voltage(V)
10
1000
Static Drain-Source On-State resistance vs Drain Current
VGS=-4.5V
100
VGS=-6V
VGS=-10V
-BVDSS, Normalized Drain-Source Breakdown Voltage
Normalized Brekdown Voltage vs Ambient Temperature
1.4
1.2
1
0.8 ID=-250μA, VGS=0V
0.6
-75 -50 -25 0 25 50 75 100 125 150 175 Tj, Junction Temperature(°C)
Source Drain Current vs Source-Drain Voltage
1.2 VGS=0V
1
Tj=25°C
0.8
0.6 Tj=150°C 0.4
-VSD, Source-Drain Voltage(V)
RDS(on), Static Drain-Source On-State Resistance(mΩ)
RDS(on), Static Drain-Source OnState Resistance(mΩ)
10 0.1
1 10 -ID, Drain Current(A)
100
Static Drain-Source On-State Resistance vs Gate-Source Voltage
500
450 400 ID=-2A
350 300
250 200
150 100
50 0
0 2 4 6 8 10 -VGS, Gate-Source Voltage(V)
RDS(on), Normalized Static DrainSource On-State Resistance
0.2 0
4 8 12 16 -IS, Source Drain Current(A)
20
Normalized Drain-Source On-State Resistance vs Junction Tempearture
2.2
2 VGS=-10V, ID=-2A 1.8
1.6
1.4
1.2
1
0.8
0.6 0.4 RDS(ON)@Tj=25°C : 97mΩ typ.
0.2 -75 -50 -25 0 25 50 75 100 125 150 175 Tj, Junction Temperature(°C)
MTE110P10KQ8
CYStek Product Specification
CYStech Electronics Corp.
Spec. No. : C165Q8 Issued Date : 2015.09.24 Revised Date : Page No. : 5/9
Typical Characteristics(Cont.)
10000
Capacitance vs Drain-to-Source Voltage
Capacitance---(pF)
1000
100
10 0.1
Ciss C oss
Crss
1 10 -VDS, Drain-Source Voltage(V)
100
-VGS(th), Normalized Threshold Voltage
Normalized Thresh.