MTN2604N6

CYStech Electronics Corp. Spec. No. : C737N6 Issued Date : 2015.09.24 Revised Date : Page No. : 1/9 N-Channel Enhancement Mode Power MOSFET MTN2604N6 BVDSS ID @VGS=4.5V, TA=25°C RDSON@VGS=10V, ID=7A RDSON@VGS=4.5V, ID=5A 30V 7A 19mΩ(typ.) 26mΩ(typ.) Features Simple drive requirement Low on-resistance Small package outline Pb-free lead plating and halogen-free package Equivalent Circuit MTN2604N6 Outline SOT-26 S D D G：Gate S：Source D：Drain Pin #1 G D D Ordering Information Device MTN2604N6-0-T1-G Package SOT-26 (Pb-free lead plating and halogen-free package) Shipping 3000 pcs / tape & reel Environment friendly grade : S for RoHS compliant products, G for RoHS compliant and green compound products Packing spec, T1 : 3000 pcs / tape & reel,7” reel Product rank, zero for no rank products Product name MTN2604N6 CYStek Product Specification CYStech Electronics Corp. Spec. No. : C737N6 Issued Date : 2015.09.24 Revised Date : Page No. : 2/9 Absolute Maximum Ratings (Ta=25°C) Parameter Symbol Limits Drain-Source Voltage Gate-Source Voltage Continuous Drain Current @VGS=4.5V, TA=25 °C (Note 1) Continuous Drain Current @VGS=4.5V, TA=100 °C (Note 1) Pulsed Drain Current (Note 2, 3) Total Power Dissipation @ TA=25 °C Linear Derating Factor Operating Junction and Storage Temperature Range VDS VGS ID IDM PD Tj ; Tstg 30 ±20 7 4.4 20 2 0.016 -55~+150 Thermal Resistance, Junction-to-Ambient (Note 1) Rth,ja 62.5 Note : 1.Surface mounted on 1 in² coppe...