N-Channel Enhancement Mode MOSFET
CYStech Electronics Corp.
Spec. No. : C737N6 Issued Date : 2015.09.24 Revised Date : Page No. : 1/9
N-Channel Enhancem...
Description
CYStech Electronics Corp.
Spec. No. : C737N6 Issued Date : 2015.09.24 Revised Date : Page No. : 1/9
N-Channel Enhancement Mode Power MOSFET
MTN2604N6
BVDSS ID @VGS=4.5V, TA=25°C
RDSON@VGS=10V, ID=7A
RDSON@VGS=4.5V, ID=5A
30V 7A
19mΩ(typ.)
26mΩ(typ.)
Features
Simple drive requirement Low on-resistance Small package outline Pb-free lead plating and halogen-free package
Equivalent Circuit
MTN2604N6
Outline
SOT-26
S D D
G:Gate S:Source D:Drain
Pin #1
G D D
Ordering Information
Device MTN2604N6-0-T1-G
Package
SOT-26 (Pb-free lead plating and halogen-free package)
Shipping 3000 pcs / tape & reel
Environment friendly grade : S for RoHS compliant products, G for RoHS compliant and green compound products
Packing spec, T1 : 3000 pcs / tape & reel,7” reel
Product rank, zero for no rank products Product name
MTN2604N6
CYStek Product Specification
CYStech Electronics Corp.
Spec. No. : C737N6 Issued Date : 2015.09.24 Revised Date : Page No. : 2/9
Absolute Maximum Ratings (Ta=25°C)
Parameter
Symbol
Limits
Drain-Source Voltage Gate-Source Voltage Continuous Drain Current @VGS=4.5V, TA=25 °C (Note 1) Continuous Drain Current @VGS=4.5V, TA=100 °C (Note 1) Pulsed Drain Current (Note 2, 3)
Total Power Dissipation @ TA=25 °C Linear Derating Factor
Operating Junction and Storage Temperature Range
VDS VGS ID IDM PD
Tj ; Tstg
30 ±20
7 4.4 20 2 0.016 -55~+150
Thermal Resistance, Junction-to-Ambient (Note 1)
Rth,ja
62.5
Note : 1.Surface mounted on 1 in² coppe...
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