MTN6N65BI3S

CYStech Electronics Corp. Spec. No. : C099I3 Issued Date : 2015.10.28 Revised Date : Page No. : 1/10 N-Channel Enhancement Mode Power MOSFET MTN6N65BI3S BVDSS  ID@VGS=10V, TC=25°C  RDS(ON)@VGS=10V, ID=3A    650V  6A  1.2Ω(typ)  Features Simple Drive Requirement Low Gate Charge Fast Switching Characteristic RoHS compliant package Symbol MTN6N65BI3S Outline TO-251S G：Gate D：Drain S：Source GDS Ordering Information Device MTN6N65BI3S-0-UA-G Package TO-251S (RoHS compliant and halogen-free package) Shipping 80 pcs/tube, 50 tubes/box Environment friendly grade : S for RoHS compliant products, G for RoHS compliant and green compound products Packing spec, UA : 80 pcs / tube, 50 tubes/box Product rank, zero for no rank products Product name MTN6N65BI3S CYStek Product Specification CYStech Electronics Corp. Spec. No. : C099I3 Issued Date : 2015.10.28 Revised Date : Page No. : 2/10 Absolute Maximum Ratings (TC=25°C) Parameter Drain-Source Voltage Gate-Source Voltage Continuous Drain Current @TC=25°C, VGS=10V Continuous Drain Current @TC=100°C, VGS=10V Pulsed Drain Current (Note 1) Single Pulse Avalanche Energy (Note 2) Avalanche Current (Note 1) Repetitive Avalanche Energy (Note 1) Maximum Temperature for Soldering @ Lead at 0.125 in(0.318mm) from case for 10 seconds Total Power Dissipation (TA=25℃) Symbol VDS VGS ID IDM EAS IAS EAR TL Limits 650 ±30 6 3.8 24 106 5.5 9 300 1.25 Unit V A mJ A mJ °C W Total Power Dissipation (TC=25℃) Line...