MTY16N80E

MTY16N80E Designer’s™ Data Sheet TMOS E−FET.™ Power Field Effect Transistor N−Channel Enhancement−Mode Silicon Gate This high voltage MOSFET uses an advanced termination scheme to provide enhanced voltage−blocking capability without degrading performance over time. In addition, this advanced TMOS E−FET is designed to withstand high energy in the avalanche and commutation modes. Designed for high voltage, high speed switching applications in power supplies, converters and PWM motor controls, these devices are particularly well suited for bridge circuits where diode speed and commutating safe operating areas are critical and offer additional safety margin against unexpected voltage transients. Robust High Voltage Termination Avalanche Energy Specified Diode is Characterized for Use in Bridge Circuits IDSS and VDS(on) Specified at Elevated Temperature http://onsemi.com TMOS POWER FET 16 AMPERES, 800 VOLTS RDS(on) = 0.50 W TO−264 CASE 340G−02 STYLE 1 D G ® S MAXIMUM RATINGS (TC = 25°C unless otherwise noted) Rating Symbol Value Unit Drain−to−Source Voltage Drain−to−Gate Voltage (RGS = 1.0 MΩ) Gate−to−Source Voltage — Continuous — Non−Repetitive (tp ≤ 10 ms) VDSS VDGR VGS VGSM 800 Vdc 800 Vdc ± 20 Vdc ± 40 Vpk Drain Current — Continuous — Continuous @ TC = 100°C — Single Pulse (tp ≤ 10 μs) Total Power Dissipation Derate above 25°C ID 16 Adc ID 11 IDM 55 Apk PD 300 Watts 2.4 W/°C Operating and Storage Temperature Range Single Pulse Drain−to−Source Avalanche En...