NDD03N40Z

NDD03N40Z, NDT03N40Z N-Channel Power MOSFET 400 V, 3.4 W Features 100% Avalanche Tested Extremely High dv/dt Capability Gate Charge Minimized Very Low Intrinsic Capacitance Improved Diode Reverse Recovery Characteristics Zener−protected These Devices are Pb-Free, Halogen Free/BFR Free and are RoHS Compliant ABSOLUTE MAXIMUM RATINGS (TJ = 25°C unless otherwise noted) Parameter Symbol NDD NDT Unit Drain−to−Source Voltage Gate−to−Source Voltage Continuous Drain Current Steady State, TC = 25°C (Note 1) VDSS VGS ID 400 ±30 2.1 0.5 V V A Continuous Drain Current Steady State, TC = 100°C (Note 1) ID 1.3 0.3 A Power Dissipation Steady State, TC = 25°C PD 37 2.0 W Pulsed Drain Current Continuous Source Current (Body Diode) IDM 8.0 7.2 A IS 2.1 0.5 A Single Pulse Drain−to−Source Avalanche Energy (ID = 1 A) Peak Diode Recovery (Note 2) Maximum Temperature for Soldering Leads EAS dV/dt TL 42 mJ 12 V/ns 260 °C Operating Junction and Storage Temperature TJ, TSTG −55 to +150 °C Stresses exceeding those listed in the Maximum Ratings table may damage the device. If any of these limits are exceeded, device functionality should not be assumed, damage may occur and reliability may be affected. 1. Limited by maximum junction temperature 2. IS ≤ 2.4 A, di/dt ≤ 400 A/ms, VDD ≤ BVDSS, TJ = +150°C THERMAL RESISTANCE Parameter Symbol Value Unit Junction−to−Case (Drain) NDD03N40Z Junction−to−Ambient Steady State NDD03N40Z (Note 4) NDD03N40Z−1 (Note 3) NDT03N40Z ...