NGTB10N60FG

Ordering number : ENA2283A NGTB10N60FG N-Channel IGBT 600V, 10A, VCE(sat);1.5V, TO-220F-3FS http://onsemi.com Features IGBT VCE (sat)=1.5V typ. (IC=10A, VGE=15V) IGBT IC=20A (Tc=25°C) Adaption of full isolation type package 5μs short circuit capability Diode VF=1.3V typ.(IF=10A) Diode trr=70ns typ. Enhansment type Applications Power factor correction of white goods appliance General purpose inverter Specifications TO-220F-3FS Absolute Maximum Ratings at Ta = 25°C, Unless otherwise specified Parameter Symbol Conditions Value Unit Collector to Emitter Voltage Gate to Emitter Voltage Collector Current (DC) VCES VGES IC*1 Limited by Tjmax @ Tc=25°C *2 @ Tc=100°C *2 600 V ±20 V 20 A 10 A Collector Current (Pulse) Diode Average Output Current Allowable Power Dissipation Junction Temperature ICP Pulse width Limited by Tjmax IO PD Tc=25°C (Our ideal heat dissipation condition) *2 Tj 72 A 10 A 40 W 150 °C Storage Temperature Tstg - 55 to +150 °C Note : *1 Collector Current is calculated from the following formula. Tjmax - Tc *2 IC(Tc)= Rth(j-c)×VCE(sat) (IC(Tc)) Our condition is radiation from backside. The method is applying silicone grease to the backside of the device and attaching the device to water-cooled radiator made of aluminium. Stresses exceeding those listed in the Maximum Ratings table may damage the device. If any of these limits are exceeded, device functionality should not be assumed, damage may occur and reliability may...