NGTB30N60L2WG

Ordering number : ENA2308B NGTB30N60L2WG N-Channel IGBT With Low VF Switching Diode 600V, 30A, VCE(sat);1.4V http://onsemi.com Features IGBT VCE(sat)=1.4V typ. (IC=30A, VGE=15V) IGBT IC=100A (Tc=25°C) IGBT tf=80ns typ. Low switching loss in higher frequency applications Maximum junction temperature Tj=175°C Diode VF=1.7V typ. (IF=30A) Diode trr=70ns typ. 5μs short circuit capability Pb-free, Halogen-free and RoHS Compliance Electrical Connection C G N-channel E Applications Power factor correction of white goods appliance Specifications Absolute Maximum Ratings at Ta = 25°C, Unless otherwise specified Parameter Collector to Emitter Voltage Gate to Emitter Voltage Collector Current (DC) Limited by Tjmax @Tc=25°C *2 @Tc=100°C *2 Pulsed collector current, tp=100ms limited by Tjmax @Tc=100°C *2 Pulsed collector current, tp=1ms limited by Tjmax Diode Average Output Current Power Dissipation Tc=25°C (Our ideal heat dissipation condition) *2 Junction Temperature Storage Temperature Symbol VCES VGES IC *1 ICpulse ICpeak IO PD Tj Tstg Value 600 ±20 100 30 60 Unit V V A A A 232 30 225 175 −55 to +175 A A W °C °C Note : *1 Collector Current is calculated from the following formula. Tjmax - Tc IC(Tc)= Rth(j-c)×VCE(sat) (IC(Tc)) *2 Our condition is radiation from backside. The method is applying silicone grease to the backside of the device and attaching the device to water-cooled radiator made of aluminum. G C E Marking TO−247 CASE 340AK ...