NSVJ3910SB3

NSVJ3910SB3 Advance Information N-Channel JFET 25V, 20 to 40mA, 40mS Automotive JFET designed for compact and efficient designs and including high gain performance. AEC-Q101 qualified JFET and PPAP capable suitable for automotive applications. Features  High Forward Transfer Admittance  High Breakdown Voltage  Low Input Capacitance  Low Noise Figure  Pb-Free and RoHS compliance  AEC-Q101 qualified and PPAP capable Typical Applications Low Noise Amplifier for Automotive AM Radio SPECIFICATIONS ABSOLUTE MAXIMUM RATINGS at Ta = 25°C (Note 1) Parameter Symbol Value Unit Drain-to-Source Voltage VDSX 25 V Gate-to-Drain Voltage VGDS 25 V Gate Current IG 10 mA Drain Current ID 50 mA Allowable Power Dissipation PD 400 mW Operating Junction and Storage Temperature TJ, Tstg 55 to 150 C Note 1 : Stresses exceeding those listed in the Maximum Ratings table may damage the device. If any of these limits are exceeded, device functionality should not be assumed, damage may occur and reliability may be affected. www.onsemi.com ELECTRICAL CONNECTION N-Channel 3 1 : Source 2 : Drain 3 : Gate 12 3 1 2 CPH3 MARKING ORDERING INFORMATION See detailed ordering and shipping information on page 5 of this data sheet This document contains information on a new product. Specifications and information herein are subject to change without notice. © Semiconductor Components Industries, LLC, 2015 December 2015 - Rev. P1 1 Publication Order Number : NSVJ3910SB3/D N...