NVD6495NL

MOSFET – Power, N-Channel, Logic Level 100 V, 25 A, 50 mW NVD6495NL Features Low RDS(on) 100% Avalanche Tested AEC−Q101 Qualified These Devices are Pb−Free and are RoHS Compliant MAXIMUM RATINGS (TJ = 25°C unless otherwise noted) Parameter Symbol Value Unit Drain−to−Source Voltage VDSS 100 V Gate−to−Source Voltage − Continuous VGS $20 V Continuous Drain Steady TC = 25°C ID Current State TC = 100°C 25 A 18 Power Dissipation Steady TC = 25°C PD State 83 W Pulsed Drain Current tp = 10 ms Operating and Storage Temperature Range IDM 80 A TJ, Tstg −55 to °C +175 Source Current (Body Diode) IS Single Pulse Drain−to−Source Avalanche EAS Energy (VDD = 50 Vdc, VGS = 10 Vdc, IL(pk) = 23 A, L = 0.3 mH, RG = 25 W) Lead Temperature for Soldering TL Purposes, 1/8″ from Case for 10 Seconds 25 A 79 mJ 260 °C Stresses exceeding those listed in the Maximum Ratings table may damage the device. If any of these limits are exceeded, device functionality should not be assumed, damage may occur and reliability may be affected. THERMAL RESISTANCE RATINGS Parameter Symbol Max Unit Junction−to−Case (Drain) − Steady State RqJC Junction−to−Ambient − Steady State (Note 1) RqJA 1. Surface mounted on FR4 board using 1 sq in pad size, (Cu Area 1.127 sq in [2 oz] including traces). 1.8 °C/W 49 http://onsemi.com V(BR)DSS 100 V RDS(on) MAX 54 mW @ 4.5 V 50 mW @ 10 V D ID MAX 25 A G S 4 12 3 DPAK CASE 369AA STYLE 2 MARKING DIAGRAM & PIN ASSIG...