PCP1403

Ordering number : ENA2294A PCP1403 N-Channel Power MOSFET 60V, 4.5A, 117mΩ, Single PCP http://onsemi.com Features On-resistance RDS(on)1=92mΩ(typ.) 4V drive Protection Diode in Halogen free compliance Specifications Absolute Maximum Ratings at Ta = 25°C Parameter Symbol Conditions Drain to Source Voltage VDSS Gate to Source Voltage VGSS Drain Current (DC) Drain Current (Pulse) Power Dissipation ID IDP PW≤10μs, duty cycle≤1% Tc=25°C PD When mounted on ceramic substrate (600mm2×0.8mm) Junction Temperature Tj Storage Temperature Tstg Value 60 ±20 4.5 18 3.5 1.3 150 - 55 to +150 Unit V V A A W W °C °C Stresses exceeding those listed in the Maximum Ratings table may damage the device. If any of these limits are exceeded, device functionality should not be assumed, damage may occur and reliability may be affected. Thermal Resistance Ratings Parameter Junction to Case Steady State Junction to Ambient When mounted on ceramic substrate (600mm2×0.8mm) Symbol RθJC RθJA Value 35.7 96.1 Unit °C /W °C /W Electrical Characteristics at Ta = 25°C Parameter Drain to Source Breakdown Voltage Zero-Gate Voltage Drain Current Gate to Source Leakage Current Gate Threshold Voltage Forward Transconductance Static Drain to Source On-State Resistance Input Capacitance Output Capacitance Reverse Transfer Capacitance Symbol V(BR)DSS IDSS IGSS VGS(th) gFS RDS(on)1 RDS(on)2 RDS(on)3 Ciss Coss Crss Conditions ID=1mA, VGS=0V VDS=60V, VGS=0V VGS=±16V, VDS=0V VDS=10V, ID=1m...